Extreme ultraviolet resist materials for sub-7 nm patterning.
Chem Soc Rev
; 46(16): 4855-4866, 2017 Aug 14.
Article
em En
| MEDLINE
| ID: mdl-28650497
ABSTRACT
Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.
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1
Bases de dados:
MEDLINE
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Chem Soc Rev
Ano de publicação:
2017
Tipo de documento:
Article
País de afiliação:
Estados Unidos