Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states.
Nanoscale
; 9(27): 9386-9395, 2017 Jul 13.
Article
em En
| MEDLINE
| ID: mdl-28657077
ABSTRACT
A theoretical study of an interfacial phase change memory made of a GeTe-Sb2Te3 superlattice with W electrodes is presented to identify the high and low resistance states and the switching mechanism. The ferro structure of the GeTe layer block in the Te-Ge-Te-Ge sequence can be in the low resistance state only if the SET/RESET mode consists of a two step dynamical process, corresponding to a vertical flip of the Ge layer with respect to the Te layer, followed by lateral motion driven by thermal relaxation. The importance of spin-orbit coupling at the GeTe/Sb2Te3 interface to the "bias polarity-dependent" SET/RESET operation is shown, and an analysis of the two-dimensional states confined at the GeTe/Sb2Te3 interface inside the resistive switching layer is presented. Our results allow us to propose a phase diagram for the transition from a topologically nontrivial to a trivial gap state of these two-dimensional compounds.
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Bases de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale
Ano de publicação:
2017
Tipo de documento:
Article
País de afiliação:
Japão