Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators.

Trivedi, Tanuj; Roy, Anupam; Movva, Hema C P; Walker, Emily S; Bank, Seth R; Neikirk, Dean P; Banerjee, Sanjay K

Trivedi, Tanuj; Roy, Anupam; Movva, Hema C P; Walker, Emily S; Bank, Seth R; Neikirk, Dean P; Banerjee, Sanjay K.

Afiliação

Trivedi T; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
Roy A; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
Movva HCP; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
Walker ES; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
Bank SR; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
Neikirk DP; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
Banerjee SK; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.

ACS Nano ; 11(7): 7457-7467, 2017 07 25.

Article em En | MEDLINE | ID: mdl-28692797

Palavras-chave

bismuth telluride sulfide; lithographic patterned growth; multispecies surface migration; selective-area van der Waals epitaxy; surface fluorination; ternary topological insulators; two-dimensional layered chalcogenides

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos