Synthesis and Properties of New N-Heteroheptacenes for Solution-Based Organic Field Effect Transistors.

Zhou, Fei; Liu, Sheng; Santarsiero, Bernard D; Wink, Donald J; Boudinet, Damien; Facchetti, Antonio; Driver, Tom

Zhou, Fei; Liu, Sheng; Santarsiero, Bernard D; Wink, Donald J; Boudinet, Damien; Facchetti, Antonio; Driver, Tom.

Afiliação

Zhou F; Department of Chemistry, University of Illinois at Chicago, 845 West Taylor Street, Chicago, IL, 60607, USA.
Liu S; Department of Chemistry, University of Illinois at Chicago, 845 West Taylor Street, Chicago, IL, 60607, USA.
Santarsiero BD; Center for Biomolecular Sciences, University of Illinois at Chicago, 900 South Ashland Avenue, Chicago, IL, 60607, USA.
Wink DJ; Department of Chemistry, University of Illinois at Chicago, 845 West Taylor Street, Chicago, IL, 60607, USA.
Boudinet D; Flexterra Inc, 8025 Lamon Avenue, Skokie, IL, 60077, USA.
Facchetti A; Flexterra Inc, 8025 Lamon Avenue, Skokie, IL, 60077, USA.
Driver T; Department of Chemistry, University of Illinois at Chicago, 845 West Taylor Street, Chicago, IL, 60607, USA.

Chemistry ; 23(51): 12542-12549, 2017 Sep 12.

Article em En | MEDLINE | ID: mdl-28719724

Palavras-chave

C−H bond amination; N-heteroacenes; field effect transistor; nitrenes; rhodium

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Chemistry Assunto da revista: QUIMICA Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos

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