Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure.

Si, Mengwei; Liao, Pai-Ying; Qiu, Gang; Duan, Yuqin; Ye, Peide D

Ferroelectric Field-Effect Transistors Based on MoS₂ and CuInP₂S₆ Two-Dimensional van der Waals Heterostructure.

Si, Mengwei; Liao, Pai-Ying; Qiu, Gang; Duan, Yuqin; Ye, Peide D.

Afiliação

Si M; School of Electrical and Computer Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States.
Liao PY; School of Electrical and Computer Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States.
Qiu G; School of Electrical and Computer Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States.
Duan Y; School of Electrical and Computer Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States.
Ye PD; School of Electrical and Computer Engineering and Birck Nanotechnology Center , Purdue University , West Lafayette , Indiana 47907 , United States.

ACS Nano ; 12(7): 6700-6705, 2018 Jul 24.

Article em En | MEDLINE | ID: mdl-29944829

Palavras-chave

2D heterostructure; CuInP2S6; MoS2; ferroelectric; field-effect transistors; resistive switching

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos