Raman Spectroscopy of Multi-Layer Graphene epitaxially Grown on 4H-SiC by Joule Heat Decomposition.

Zhang, Zhiwei; Cai, Weiwei; Hong, Rongdun; Lin, Dingqu; Chen, Xiaping; Cai, Jiafa; Wu, Zhengyun

Zhang, Zhiwei; Cai, Weiwei; Hong, Rongdun; Lin, Dingqu; Chen, Xiaping; Cai, Jiafa; Wu, Zhengyun.

Afiliação

Zhang Z; Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.
Cai W; Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.
Hong R; Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, People's Republic of China.
Lin D; Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen, 361005, People's Republic of China.
Chen X; Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China. rdhong@xmu.edu.cn.
Cai J; Jiujiang Research Institute of Xiamen University, Jiujiang, 332000, People's Republic of China. rdhong@xmu.edu.cn.
Wu Z; Department of Physics, Xiamen University, Xiamen, 361005, People's Republic of China.

Nanoscale Res Lett ; 13(1): 197, 2018 Jul 06.

Article em En | MEDLINE | ID: mdl-29978387

Palavras-chave

Carbon materials; Raman; Semiconductors

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2018 Tipo de documento: Article