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Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits.
Petit, L; Boter, J M; Eenink, H G J; Droulers, G; Tagliaferri, M L V; Li, R; Franke, D P; Singh, K J; Clarke, J S; Schouten, R N; Dobrovitski, V V; Vandersypen, L M K; Veldhorst, M.
Afiliação
  • Petit L; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Boter JM; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Eenink HGJ; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Droulers G; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Tagliaferri MLV; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Li R; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Franke DP; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Singh KJ; Components Research, Intel Corporation, 2501 NE Century Blvd, Hillsboro, Oregon 97124, USA.
  • Clarke JS; Components Research, Intel Corporation, 2501 NE Century Blvd, Hillsboro, Oregon 97124, USA.
  • Schouten RN; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Dobrovitski VV; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Vandersypen LMK; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
  • Veldhorst M; QuTech and Kavli Institute of Nanoscience, TU Delft, P.O. Box 5046, 2600 GA Delft, Netherlands.
Phys Rev Lett ; 121(7): 076801, 2018 Aug 17.
Article em En | MEDLINE | ID: mdl-30169086
ABSTRACT
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Holanda

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Holanda