Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits.
Phys Rev Lett
; 121(7): 076801, 2018 Aug 17.
Article
em En
| MEDLINE
| ID: mdl-30169086
ABSTRACT
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.
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Bases de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2018
Tipo de documento:
Article
País de afiliação:
Holanda