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Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy.
Omika, Keiichi; Tateno, Yasunori; Kouchi, Tsuyoshi; Komatani, Tsutomu; Yaegassi, Seiji; Yui, Keiichi; Nakata, Ken; Nagamura, Naoka; Kotsugi, Masato; Horiba, Koji; Oshima, Masaharu; Suemitsu, Maki; Fukidome, Hirokazu.
Afiliação
  • Omika K; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
  • Tateno Y; Sumitomo Electric Industries, Ltd., Osaka, Japan.
  • Kouchi T; Sumitomo Electric Industries, Ltd., Osaka, Japan.
  • Komatani T; Sumitomo Electric Device Innovations, Inc., Yokohama, Japan.
  • Yaegassi S; Sumitomo Electric Industries, Ltd., Osaka, Japan.
  • Yui K; Sumitomo Electric Industries, Ltd., Osaka, Japan.
  • Nakata K; Sumitomo Electric Industries, Ltd., Osaka, Japan.
  • Nagamura N; National Institute for Materials Science, Tsukuba, Japan.
  • Kotsugi M; Tokyo University of Science, Tokyo, Japan.
  • Horiba K; Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Japan.
  • Oshima M; Synchrotron Radiation Research Organization, The University of Tokyo, Tokyo, Japan.
  • Suemitsu M; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
  • Fukidome H; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan. fukidome@riec.tohoku.ac.jp.
Sci Rep ; 8(1): 13268, 2018 Sep 05.
Article em En | MEDLINE | ID: mdl-30185804
With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can operate in the high-frequency millimeter-wave band. However, GaN-HEMT operation is destabilized by current collapse phenomena arising from surface electron trapping (SET), which has not been fully understood thus far. Here, we conduct quantitative mechanistic studies on SET in GaN-HEMTs by applying element- and site-specific photoelectron nanospectroscopy to a GaN-HEMT device under operation. Our study reveals that SET is induced by a large local electric field. Furthermore, surface passivation using a SiN thin film is demonstrated to play a dual role: electric-field weakening and giving rise to chemical interactions that suppress SET. Our findings can contribute to the realization of high-capacity wireless communication systems based on GaN-HEMTs.

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Japão

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Japão