Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS<sub>2</sub> in the Presence of Defects, Strain, and Charged Impurities.

Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS₂ in the Presence of Defects, Strain, and Charged Impurities.

Dubey, Sudipta; Lisi, Simone; Nayak, Goutham; Herziger, Felix; Nguyen, Van-Dung; Le Quang, Toai; Cherkez, Vladimir; González, César; Dappe, Yannick J; Watanabe, Kenji; Taniguchi, Takashi; Magaud, Laurence; Mallet, Pierre; Veuillen, Jean-Yves; Arenal, Raul; Marty, Laëtitia; Renard, Julien; Bendiab, Nedjma; Coraux, Johann; Bouchiat, Vincent.

ACS Nano ; 12(10): 10565-10566, 2018 Oct 23.

Article em En | MEDLINE | ID: mdl-30234967

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2018 Tipo de documento: Article