Atomic Scale Origin of Enhanced Ionic Conductivity at Crystal Defects.

Feng, Bin; Ishikawa, Ryo; Kumamoto, Akihito; Shibata, Naoya; Ikuhara, Yuichi

Feng, Bin; Ishikawa, Ryo; Kumamoto, Akihito; Shibata, Naoya; Ikuhara, Yuichi.

Afiliação

Feng B; Institute of Engineering Innovation , The University of Tokyo , 2-11-16 Yayoi , Bunkyo-ku, Tokyo 113-8656 , Japan.
Ishikawa R; Institute of Engineering Innovation , The University of Tokyo , 2-11-16 Yayoi , Bunkyo-ku, Tokyo 113-8656 , Japan.
Kumamoto A; Institute of Engineering Innovation , The University of Tokyo , 2-11-16 Yayoi , Bunkyo-ku, Tokyo 113-8656 , Japan.
Shibata N; Institute of Engineering Innovation , The University of Tokyo , 2-11-16 Yayoi , Bunkyo-ku, Tokyo 113-8656 , Japan.
Ikuhara Y; Nanostructures Research Laboratory , Japan Fine Ceramics Center , 2-4-1 Mutsuno , Atsuta-ku, Nagoya , Aichi 456-8587 , Japan.

Nano Lett ; 19(3): 2162-2168, 2019 03 13.

Article em En | MEDLINE | ID: mdl-30785297

Palavras-chave

Dislocations; aberration-corrected STEM; atomic resolution EDS; ionic conductivity; yttria-stabilized zirconia (YSZ)

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Japão