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Correlated optical and structural analyses of individual GaAsP/GaP core-shell nanowires.
Himwas, C; Collin, S; Chen, H-L; Patriarche, G; Oehler, F; Travers, L; Saket, O; Julien, F H; Harmand, J-C; Tchernycheva, M.
Afiliação
  • Himwas C; Centre de Nanosciences et de Nanotechnologies, UMR 9001 CNRS, Univ. Paris Sud, Univ. Paris-Saclay, 10 Boulevard Thomas Gobert, F-91120 Palaiseau Cedex, France. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand.
Nanotechnology ; 30(30): 304001, 2019 Jul 26.
Article em En | MEDLINE | ID: mdl-30965307
ABSTRACT
We report on the structural and optical properties of GaAs0.7P0.3/GaP core-shell nanowires (NWs) for future photovoltaic applications. The NWs are grown by self-catalyzed molecular beam epitaxy. Scanning transmission electron microscopy (STEM) analyses demonstrate that the GaAsP NW core develops an inverse-tapered shape with a formation of an unintentional GaAsP shell having a lower P content. Without surface passivation, this unintentional shell produces no luminescence because of strong surface recombination. However, passivation of the surface with a GaP shell leads to the appearance of a secondary peak in the luminescence spectrum arising from this unintentional shell. The attribution of the luminescence peaks is confirmed by correlated cathodoluminescence and STEM analyses of the same NW.

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Tailândia

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Tailândia