Corrigendum: Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in-situ annealing in ultra-high vacuum (2020 Nanotechnology 31 025205).

Parakh, Mehul; Johnson, Sean; Pokharel, Rabin; Ramaswamy, Priyanka; Nalamati, Surya; Li, Jia; Iyer, Shanthi

Parakh, Mehul; Johnson, Sean; Pokharel, Rabin; Ramaswamy, Priyanka; Nalamati, Surya; Li, Jia; Iyer, Shanthi.

Afiliação

Parakh M; Nanoengineering, North Carolina A&T State University, Greensboro, North Carolina, UNITED STATES.
Johnson S; Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina, UNITED STATES.
Pokharel R; Nanoengineering, North Carolina A&T State University, Greensboro, North Carolina, UNITED STATES.
Ramaswamy P; Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina, UNITED STATES.
Nalamati S; North Carolina Agricultural and Technical State University, Greensboro, North Carolina, UNITED STATES.
Li J; North Carolina Agricultural and Technical State University, Greensboro, North Carolina, UNITED STATES.
Iyer S; Department of Nanoengineering, North Carolina Agricultural and Technical State University, greensboro, North Carolina, UNITED STATES.

Nanotechnology ; 2020 Mar 18.

Article em En | MEDLINE | ID: mdl-32187593

Palavras-chave

SCLC; compound semiconductor nanowire; ensemble nanowire device; nanowires

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos