A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.

Kim, Baek Su; Hyun, Seung Dam; Moon, Taehwan; Do Kim, Keum; Lee, Young Hwan; Park, Hyeon Woo; Lee, Yong Bin; Roh, Jangho; Kim, Beom Yong; Kim, Ho Hyun; Park, Min Hyuk; Hwang, Cheol Seong

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf_0.5Zr_0.5O₂ Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.

Kim, Baek Su; Hyun, Seung Dam; Moon, Taehwan; Do Kim, Keum; Lee, Young Hwan; Park, Hyeon Woo; Lee, Yong Bin; Roh, Jangho; Kim, Beom Yong; Kim, Ho Hyun; Park, Min Hyuk; Hwang, Cheol Seong.

Afiliação

Kim BS; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Hyun SD; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Moon T; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Do Kim K; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Lee YH; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Park HW; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Lee YB; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Roh J; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Kim BY; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Kim HH; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Park MH; School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro-63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea. minhyukpark@pusan.ac.kr.
Hwang CS; Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea. cheolsh@snu.ac.kr.

Nanoscale Res Lett ; 15(1): 72, 2020 Apr 07.

Article em En | MEDLINE | ID: mdl-32266598

Palavras-chave

Atomic layer deposition; Ferroelectric Hf0.5Zr0.5O2 film; Interfacial layer; Metal-organic precursor; Wake-up phenomenon

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2020 Tipo de documento: Article