Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity.
Nano Lett
; 20(9): 6666-6673, 2020 Sep 09.
Article
em En
| MEDLINE
| ID: mdl-32822183
ABSTRACT
Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to â¼10-14A in the InSe channel by tuning the three different polarization states in ferroelectric P(VDF-TrFE) and improved interface properties using h-BN as a substrate, the ferroelectric-gated InSe photodetectors show a high on/off ratio of over 108, a high photoresponsivity up to 14â¯250 AW-1, a high detectivity up to 1.63 × 1013 Jones, and a fast response time of 600 µs even at zero-gate voltage. The present results highlight the role of ferroelectric P(VDF-TrFE) in tuning the carrier transport of InSe and may provide an avenue for the development of InSe-based photodetectors.
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MEDLINE
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En
Revista:
Nano Lett
Ano de publicação:
2020
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Article