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Abnormal conductivity in low-angle twisted bilayer graphene.
Zhang, Shuai; Song, Aisheng; Chen, Lingxiu; Jiang, Chengxin; Chen, Chen; Gao, Lei; Hou, Yuan; Liu, Luqi; Ma, Tianbao; Wang, Haomin; Feng, Xi-Qiao; Li, Qunyang.
Afiliação
  • Zhang S; AML, CNMM, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
  • Song A; State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China.
  • Chen L; State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China.
  • Jiang C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Chen C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Gao L; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
  • Hou Y; Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China. qunyang@tsinghua.edu.cn gaolei@ustb.edu.cn hmwang@mail.sim.ac.cn.
  • Liu L; CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
  • Ma T; CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
  • Wang H; State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China.
  • Feng XQ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China. qunyang@tsinghua.edu.cn gaolei@ustb.edu.cn hmwang@mail.sim.ac.cn.
  • Li Q; AML, CNMM, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China.
Sci Adv ; 6(47)2020 Nov.
Article em En | MEDLINE | ID: mdl-33219028
ABSTRACT
Controlling the interlayer twist angle offers a powerful means for tuning the electronic properties of two-dimensional (2D) van der Waals materials. Typically, the electrical conductivity would increase monotonically with decreasing twist angle owing to the enhanced coupling between adjacent layers. Here, we report a nonmonotonic angle-dependent vertical conductivity across the interface of bilayer graphene with low twist angles. More specifically, the vertical conductivity enhances gradually with decreasing twist angle up to a crossover angle at θc ≈ 5°, and then it drops notably upon further decrease in the twist angle. Revealed by density functional theory calculations and scanning tunneling microscopy, the abnormal behavior is attributed to the unusual reduction in average carrier density originating from local atomic reconstruction. The impact of atomic reconstruction on vertical conductivity is unique for low-angle twisted 2D van der Waals materials and provides a strategy for designing and optimizing their electronic performance.

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2020 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2020 Tipo de documento: Article País de afiliação: China