Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System.
Phys Rev Lett
; 126(25): 256802, 2021 Jun 25.
Article
em En
| MEDLINE
| ID: mdl-34241499
ABSTRACT
We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν=2 to ν=5 in selective probing of the edge states of the dot (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν=5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors.
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1
Bases de dados:
MEDLINE
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2021
Tipo de documento:
Article
País de afiliação:
Estados Unidos