Your browser doesn't support javascript.
loading
Light-Emitting Memristors for Optoelectronic Artificial Efferent Nerve.
Zhu, Yangbin; Wu, Chaoxing; Xu, Zhongwei; Liu, Yang; Hu, Hailong; Guo, Tailiang; Kim, Tae Whan; Chai, Yang; Li, Fushan.
Afiliação
  • Zhu Y; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
  • Wu C; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
  • Xu Z; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
  • Liu Y; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
  • Hu H; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
  • Guo T; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
  • Kim TW; Department of Electronic and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
  • Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, People's Republic of China.
  • Li F; Institute of Optoelectronic Technology, Fuzhou University, Fuzhou 350108, People's Republic of China.
Nano Lett ; 21(14): 6087-6094, 2021 07 28.
Article em En | MEDLINE | ID: mdl-34269052
Assuntos
Palavras-chave
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Bases de dados: MEDLINE Assunto principal: Sinapses / Plasticidade Neuronal Idioma: En Revista: Nano Lett Ano de publicação: 2021 Tipo de documento: Article
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Bases de dados: MEDLINE Assunto principal: Sinapses / Plasticidade Neuronal Idioma: En Revista: Nano Lett Ano de publicação: 2021 Tipo de documento: Article