Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors.

Choi, Junhwan; Lee, Changhyeon; Lee, Chungryeol; Park, Hongkeun; Lee, Seung Min; Kim, Chang-Hyun; Yoo, Hocheon; Im, Sung Gap

Choi, Junhwan; Lee, Changhyeon; Lee, Chungryeol; Park, Hongkeun; Lee, Seung Min; Kim, Chang-Hyun; Yoo, Hocheon; Im, Sung Gap.

Afiliação

Choi J; Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
Lee C; Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
Lee C; Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
Park H; Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
Lee SM; Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
Kim CH; Department of Electronic Engineering Gachon University 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Korea.
Yoo H; Department of Electronic Engineering Gachon University 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Korea. hyoo@gachon.ac.kr.
Im SG; Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea. sgim@kaist.ac.kr.

Nat Commun ; 13(1): 2305, 2022 Apr 28.

Article em En | MEDLINE | ID: mdl-35484111

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article