Direct observation of contact resistivity for monolayer TMD based junctions <i>via</i> PL spectroscopy.

Zhang, Linglong; Tang, Yilin; Yan, Han; Yildirim, Tanju; Yang, Shunshun; Song, Haizeng; Zhang, Xiaowei; Tian, Fuguo; Luo, Zhongzhong; Pei, Jiajie; Yang, Qi; Xu, Yixin; Song, Xiaoying; Khan, Ahmed Raza; Xia, Sihao; Sun, Xueqian; Wen, Bo; Zhou, Fei; Li, Weiwei; Liu, Youwen; Zhang, Han

Direct observation of contact resistivity for monolayer TMD based junctions via PL spectroscopy.

Zhang, Linglong; Tang, Yilin; Yan, Han; Yildirim, Tanju; Yang, Shunshun; Song, Haizeng; Zhang, Xiaowei; Tian, Fuguo; Luo, Zhongzhong; Pei, Jiajie; Yang, Qi; Xu, Yixin; Song, Xiaoying; Khan, Ahmed Raza; Xia, Sihao; Sun, Xueqian; Wen, Bo; Zhou, Fei; Li, Weiwei; Liu, Youwen; Zhang, Han.

Afiliação

Zhang L; College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China. linglongzhang1@126.com.
Tang Y; Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia.
Yan H; Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK.
Yildirim T; Center for Functional Sensor & Actuator (CFSN), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan.
Yang S; College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China. linglongzhang1@126.com.
Song H; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Zhang X; Department of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China.
Tian F; College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China. linglongzhang1@126.com.
Luo Z; College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Jiangsu Province Engineering Research Center for Fabrication and Application of Special Optical Fiber Materials and Devices, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Na
Pei J; College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, Fujian, China.
Yang Q; Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, China.
Xu Y; College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China. linglongzhang1@126.com.
Song X; College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, China.
Khan AR; Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia.
Xia S; Department of Industrial and Manufacturing Engineering University of Engineering and Technology (Rachna College), Lahore 54700, Pakistan.
Sun X; College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China. linglongzhang1@126.com.
Wen B; Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra 2601, Australia.
Zhou F; Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China. dr.bowen1986@outlook.com.
Li W; National Key Laboratory for Precision Hot Processing of Metals; School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China. angel.flyfly@hotmail.com.
Liu Y; State Key Laboratory for Environment-friendly Energy Materials, School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang, 621010, China.
Zhang H; College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing 211106, China. linglongzhang1@126.com.

Nanoscale ; 14(23): 8260-8270, 2022 Jun 16.

Article em En | MEDLINE | ID: mdl-35660824

RESUMO

Monolayer transition metal dichalcogenides (mTMDs) possess a direct band gap and strong PL emission that is highly sensitive to doping level and interfaces, laying the foundation for investigating the contact between mTMD and metal via PL spectroscopy. Currently, electrical methods have been utilized to measure the contact resistance (RC), but they are complicated, time-consuming, high-cost and suffer from inevitable chemical disorders and Fermi level pinning. In addition, previously reported contact resistances comprise both Schottky barrier and tunnel barrier components. Here, we report a simple, rapid and low-cost method to study the tunnel barrier dominated contact resistance of mTMD based junctions through PL spectroscopy. These junctions are free from chemical disorders and Fermi level pinning. Excluding the Schottky barrier component, solely tunnel barrier dominated contact resistances of 1 L MoSe2/Au and 1 L MoSe2/graphene junctions were estimated to be 147.8 Ω µm and 54.9 Ω µm, respectively. Density functional theory (DFT) simulations revealed that the larger RC of the former was possibly due to the existence of intrinsic effective potential difference (Φbarrier) between mTMD and metal. Both junctions exhibit an increasing tendency of RC as temperature decreases, which is probably attributed to the thermal expansion coefficient (TEC) mismatch-triggered interlayer spacing (d) increase and temperature-induced doping. Remarkably, a significant change of RC was observed in 1 L MoSe2/Au junctions, which is possibly ascribed to the changes of their orbital overlaps. Our results open new avenues for exploring fundamental metal-semiconductor contact principles and constructing high-performance devices.

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanoscale Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China