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Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length.
Song, Seunguk; Yoon, Aram; Ha, Jong-Kwon; Yang, Jihoon; Jang, Sora; Leblanc, Chloe; Wang, Jaewon; Sim, Yeoseon; Jariwala, Deep; Min, Seung Kyu; Lee, Zonghoon; Kwon, Soon-Yong.
Afiliação
  • Song S; Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Yoon A; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
  • Ha JK; Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Yang J; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea.
  • Jang S; Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Leblanc C; Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Wang J; Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Sim Y; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
  • Jariwala D; Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Min SK; Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
  • Lee Z; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
  • Kwon SY; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea.
Nat Commun ; 13(1): 4916, 2022 Aug 22.
Article em En | MEDLINE | ID: mdl-35995776
ABSTRACT
The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe2. The use of PtTe2 as an epitaxial template enables the lateral growth of monolayer MoS2 to achieve a PtTe2-MoS2 MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe2-MoS2 MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2022 Tipo de documento: Article