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Significant Unconventional Anomalous Hall Effect in Heavy Metal/Antiferromagnetic Insulator Heterostructures.
Liang, Yuhan; Wu, Liang; Dai, Minyi; Zhang, Yujun; Zhang, Qinghua; Wang, Jie; Zhang, Nian; Xu, Wei; Chen, Hetian; Ma, Ji; Wu, Jialu; Cao, Yanwei; Yi, Di; Ma, Jing; Jiang, Wanjun; Hu, Jia-Mian; Nan, Ce-Wen; Lin, Yuan-Hua.
Afiliação
  • Liang Y; School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
  • Wu L; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China.
  • Dai M; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
  • Zhang Y; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
  • Zhang Q; Institute of Physics, Chinese Academy of Sciences, Beijing, 100049, China.
  • Wang J; Institute of Physics, Chinese Academy of Sciences, Beijing, 100049, China.
  • Zhang N; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
  • Xu W; CAS Center for Excellence in Superconducting Electronics (CENSE), Chinese Academy of Sciences, Shanghai, 200050, China.
  • Le Zhao; Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
  • Chen H; Department of Physics, Tsinghua University, Beijing, 10084, China.
  • Ma J; School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
  • Wu J; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China.
  • Cao Y; School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
  • Yi D; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315021, China.
  • Ma J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Jiang W; School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
  • Hu JM; School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
  • Nan CW; Department of Physics, Tsinghua University, Beijing, 10084, China.
  • Lin YH; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
Adv Sci (Weinh) ; 10(8): e2206203, 2023 Mar.
Article em En | MEDLINE | ID: mdl-36703616
ABSTRACT
The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal (HM)/antiferromagnetic (AFM) insulator (AFMI) heterostructures at high temperatures yet disappears at low temperatures. In this paper, an unconventional high-temperature AHE in HM/AFMI is observed only around the Néel temperature of AFM, with large anomalous Hall resistivity up to 40 nΩ cm is reported. This mechanism is attributed to the emergence of a noncollinear AFM spin texture with a non-zero net topological charge. Atomistic spin dynamics simulation shows that such a unique spin texture can be stabilized by the subtle interplay among the collinear AFM exchange coupling, interfacial Dyzaloshinski-Moriya interaction, thermal fluctuation, and bias magnetic field.
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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Adv Sci (Weinh) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China