Influences of point defects on electron transport of two-dimensional gep semiconductor device.

Zeng, Hui; Zhang, Tian-Cheng; Bao, Hua-Guang; Zhao, Jun; Ding, Da-Zhi

Zeng, Hui; Zhang, Tian-Cheng; Bao, Hua-Guang; Zhao, Jun; Ding, Da-Zhi.

Afiliação

Zeng H; School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.
Zhang TC; School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.
Bao HG; School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.
Zhao J; New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, People's Republic of China.
Ding DZ; School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China.

Nanotechnology ; 34(18)2023 Feb 17.

Article em En | MEDLINE | ID: mdl-36724503

Palavras-chave

density-functional theory (DFT); field-effect transistor (FET); point defect; quantum transport; two-dimensional semiconductor; vacancy

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article