Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS2.
Nano Lett
; 23(7): 3070-3077, 2023 Apr 12.
Article
em En
| MEDLINE
| ID: mdl-36995751
ABSTRACT
Triggered by the expanding demands of semiconductor devices, strain engineering of two-dimensional transition metal dichalcogenides (TMDs) has garnered considerable research interest. Through steady-state measurements, strain has been proved in terms of its modulation of electronic energy bands and optoelectronic properties in TMDs. However, the influence of strain on the spin-orbit coupling as well as its related valley excitonic dynamics remains elusive. Here, we demonstrate the effect of strain on the excitonic dynamics of monolayer WS2 via steady-state fluorescence and transient absorption spectroscopy. Combined with theoretical calculations, we found that tensile strain can reduce the spin-splitting value of the conduction band and lead to transitions between different exciton states via spin-flip mechanism. Our findings suggest that the spin-flip process is strain-dependent, provides a reference for application of valleytronic devices, where tensile strain is usually existing during their design and fabrication.
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Bases de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2023
Tipo de documento:
Article
País de afiliação:
China