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Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.
Song, Min-Kyu; Kang, Ji-Hoon; Zhang, Xinyuan; Ji, Wonjae; Ascoli, Alon; Messaris, Ioannis; Demirkol, Ahmet Samil; Dong, Bowei; Aggarwal, Samarth; Wan, Weier; Hong, Seok-Man; Cardwell, Suma George; Boybat, Irem; Seo, Jae-Sun; Lee, Jang-Sik; Lanza, Mario; Yeon, Hanwool; Onen, Murat; Li, Ju; Yildiz, Bilge; Del Alamo, Jesús A; Kim, Seyoung; Choi, Shinhyun; Milano, Gianluca; Ricciardi, Carlo; Alff, Lambert; Chai, Yang; Wang, Zhongrui; Bhaskaran, Harish; Hersam, Mark C; Strukov, Dmitri; Wong, H-S Philip; Valov, Ilia; Gao, Bin; Wu, Huaqiang; Tetzlaff, Ronald; Sebastian, Abu; Lu, Wei; Chua, Leon; Yang, J Joshua; Kim, Jeehwan.
Afiliação
  • Song MK; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Kang JH; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Zhang X; Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Ji W; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Ascoli A; Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Messaris I; Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Demirkol AS; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Dong B; Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
  • Aggarwal S; Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
  • Wan W; Chair of Fundamentals of Electrical Engineering, Institute of Principles of Electrical and Electronic Engineering, Faculty of Electrical and Computer Engineering, School of Engineering Sciences, Technische Universität Dresden, Dresden 01069, Germany.
  • Hong SM; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Cardwell SG; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Boybat I; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Seo JS; The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
  • Lee JS; Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
  • Lanza M; IBM Research Europe, 8803 Rüschlikon, Switzerland.
  • Yeon H; School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, United States.
  • Onen M; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Li J; Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Yildiz B; School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.
  • Del Alamo JA; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Kim S; Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Choi S; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Milano G; Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Ricciardi C; Department of Nuclear Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Alff L; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States.
  • Chai Y; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
  • Wang Z; The School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
  • Bhaskaran H; Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce, Torino 10135, Italy.
  • Hersam MC; Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi, Torino 10129, Italy.
  • Strukov D; Advanced Thin Film Technology Division, Institute of Materials Science, Technische Universität Darmstadt, Darmstadt 64287, Germany.
  • Wong HP; Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong 999077, China.
  • Valov I; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China.
  • Gao B; Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom.
  • Wu H; Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Tetzlaff R; Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
  • Sebastian A; Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States.
  • Lu W; Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States.
  • Chua L; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
  • Yang JJ; Research Centre Juelich, PGI-7, Wilhelm-Johnen-Str., Juelich 52425, Germany.
  • Kim J; Institute of Electrochemistry and Energy Systems "Acad. E. Budewski", Bulgarain Academy of Sciences, "Acad. G. Bochev 10" str., 1113 Sofia, Bulgaria.
ACS Nano ; 17(13): 11994-12039, 2023 Jul 11.
Article em En | MEDLINE | ID: mdl-37382380
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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Adicionar na Minha BVS
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos