Enhancement of NbO<sub>2</sub>-based oscillator neuron device performance via cryogenic operation.

Kwon, Ohhyuk; Heo, Seongjae; Kim, Dongmin; Kim, Jiho; Hwang, Hyunsang

Enhancement of NbO₂-based oscillator neuron device performance via cryogenic operation.

Kwon, Ohhyuk; Heo, Seongjae; Kim, Dongmin; Kim, Jiho; Hwang, Hyunsang.

Afiliação

Kwon O; Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Heo S; Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Kim D; Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Kim J; Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.
Hwang H; Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.

Nanotechnology ; 35(10)2023 Dec 27.

Article em En | MEDLINE | ID: mdl-38061058

Palavras-chave

cryogenic; niobium dioxide; oscillator

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Texto completo: 1 Bases de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article