Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing.
RSC Adv
; 13(51): 35993-36008, 2023 Dec 08.
Article
em En
| MEDLINE
| ID: mdl-38090095
ABSTRACT
We investigate the morphological, electrical, magnetic, and resistive switching properties of (Co, Yb) co-ZnO for neuromorphic computing. By using hydrothermal synthesized nanoparticles and their corresponding sputtering target, we introduce Co and Yb into the ZnO structure, leading to increased oxygen vacancies and grain volume, indicating grain growth. This growth reduces grain boundaries, enhancing electrical conductivity and room-temperature ferromagnetism in Co and Yb-doped ZnO nanoparticles. We present a sputter-grown memristor with a (Co, Yb) co-ZnO layer between Au electrodes. Characterization confirms the ZnO layer's presence and 100 nm-thick Au electrodes. The memristor exhibits repeatable analog resistance switching, allowing manipulation of conductance between low and high resistance states. Statistical endurance tests show stable resistive switching with minimal dispersion over 100 pulse cycles at room temperature. Retention properties of the current states are maintained for up to 1000 seconds, demonstrating excellent thermal stability. A physical model explains the switching mechanism, involving Au ion migration during "set" and filament disruption during "reset." Current-voltage curves suggest space-charge limited current, emphasizing conductive filament formation. All these results shows good electronic devices and systems towards neuromorphic computing.
Texto completo:
1
Bases de dados:
MEDLINE
Idioma:
En
Revista:
RSC Adv
Ano de publicação:
2023
Tipo de documento:
Article