High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic-photonic integrated circuits at telecommunication wavelengths.
Opt Lett
; 49(5): 1281-1284, 2024 Mar 01.
Article
em En
| MEDLINE
| ID: mdl-38426993
ABSTRACT
We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic-photonic integrated circuits (EPICs) operating at telecommunication wavelengths. The GeOI samples were fabricated using layer transfer and wafer-bonding techniques, and a high-quality Ge active layer was achieved. Planar lateral p-i-n WGPDs were fabricated and characterized, and they exhibited a low dark current of 0.1â
µA. Strain-induced alterations in the optical properties were observed, resulting in an extended photodetection range up to λ = 1638â
nm. This range encompasses crucial telecommunication bands. The WGPDs exhibited a high responsivity of 0.56â
A/W and a high detectivity of D ∗ = 1.87 ×109cmHz1/2W - 1 at 1550â
nm. A frequency-response analysis revealed that increasing the bias voltage from -1 to -9â
V enhances the 3-dB bandwidth from 31 to 49â
MHz. This study offers a comprehensive understanding of GeOI WGPDs, fostering high-performance EPICs with implications for telecommunications and beyond.
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MEDLINE
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En
Revista:
Opt Lett
Ano de publicação:
2024
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Article