Phase Controlled Growth of Cd3As2 Nanowires and Their Negative Photoconductivity.

The bottom-up synthesis process often allows the growth of metastable phase nanowires instead of the thermodynamically stable phase. Herein, we synthesized Cd3As2 nanowires with a controlled three-dimensional Dirac semimetal phase using a chemical vapor transport method. Three different phases such as the body centered tetragonal (bct), and two metastable primitive tetragonal (P42/nbc and P42/nmc) phases were identified. The conversion between three phases (bct → P42/nbc → P42/nmc) was achieved by increasing the growth temperature. The growth direction is [110] for bct and P42/nbc and [100] for P42/nmc, corresponding to the same crystallographic axis. Field effect transistors and photodetector devices showed the nearly same electrical and photoelectrical properties for three phases. Differential conductance measurement confirms excellent electron mobility (2 × 104 cm2/(V s) at 10 K). Negative photoconductance was first observed, and the photoresponsivity reached 3 × 104 A/W, which is ascribed to the surface defects acting as trap sites for the photogenerated electrons.

Controllable p-n junctions in three-dimensional Dirac semimetal Cd3As2 nanowires.

We demonstrate a controllable p-n junction in a three-dimensional Dirac semimetal (DSM) Cd3As2 nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n-n and p-p) and bipolar (n-p and n-p) regimes, where p-n junctions are formed. The conductance in the p-n junction regimes decreases drastically when a magnetic field is applied perpendicular to the nanowire. In these regimes, the device shows quantum dot behavior, whereas the device exhibits conductance plateaus in the n-n regime at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics.

Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

Highly transparent and conducting graphene-embedded ZnO films with enhanced photoluminescence fabricated by aerosol synthesis.

Graphene/inorganic hybrid structures have attracted increasing attention in research aimed at producing advanced optoelectronic devices and sensors. Herein, we report on aerosol synthesis of new graphene-embedded zinc oxide (ZnO) films with higher optical transparency (>80% at visible wavelengths), improved electrical conductivity (>2 orders of magnitude, ∼ 20 kΩ/□), and enhanced photoluminescence (∼ 3 times), as compared to bare ZnO film. The ZnO/graphene composite films, in which reduced graphene oxide nanoplatelets (∼ 4 nm thick) are embedded in nanograined ZnO (∼ 50 nm in grain size), were fabricated from colloidal suspensions of graphene oxide with an aqueous zinc precursor. These new luminescent ZnO/graphene composites, with high optical transparency and improved electrical conductivity, are promising materials for use in optoelectronic devices.

Validation of the Quality-of-Life Questionnaire of the European Foundation for Osteoporosis (QUALEFFO-26) in Korean population.

We aimed to evaluate the reliability and validity of the adapted Korean version of the Quality-of-Life Questionnaire of the European Foundation for Osteoporosis (QUALEFFO-26). Translation/retranslation of the English version of QUALEFFO was conducted, and all steps of the cross-cultural adaptation process were performed. The Korean version of the visual analog scale measure of pain, QUALEFFO-26 and the previously validated Short Form-36 (SF-36) were mailed to 162 consecutive patients with osteoporosis. Factor analysis and reliability assessment by kappa statistics of agreement for each item, the intraclass correlation coefficient and Cronbach's α were conducted. Construct validity was also evaluated by comparing the responses of QUALEFFO-26 with the responses of SF-36 using Pearson's correlation coefficient. Factor analysis extracted 3 factors. All items had a kappa statistics of agreement greater than 0.6. The QUALEFFO-26 showed good test/retest reliability (QUALEFFO-26: 0.8271). Internal consistency of Cronbach's α was found to be very good (QUALEFFO-26: 0.873). The Korean version of QUALEFFO-26 showed good significant correlation with SF-36 total score and with single SF-36 domains scores. The adapted Korean version of the QUALEFFO-26 was successfully translated and showed acceptable measurement properties and, as such, is considered suitable for outcome assessments in the Korean-speaking patients with osteoporosis.

Correlation between clinical outcomes and spinopelvic parameters in osteoporosis.

INTRODUCTION: Little data is available on the relationship between sagittal spinopelvic parameters and health related quality of life (HRQOL) in osteoporotic patients. The aim of this study was to identify relationships between spinopelvic parameters and HRQOL in osteoporosis. MATERIAL AND METHODS: The patient and control groups comprised 138 osteoporotic patients and 40 controls. All underwent anteroposterior and lateral radiography of the whole spine, including hip joints, and completed clinical questionnaires. The radiographic parameters examined were; sacral slope, pelvic tilt, pelvic incidence, thoracic kyphosis, lumbar lordosis, and sagittal vertical axis. Lumbar spinal bone mineral density (LSBMD) and femoral neck BMD (FNBMD) of the non-dominant proximal femur were measured. A Visual Analogue Scale (VAS: 0-10) was used to assess back pain, and the Oswestry disability index (ODI) questionnaire and the Scoliosis Research Society (SRS-22) questionnaire to evaluate QOL. Statistical analysis was performed to identify significant differences between the patient and control groups. In addition, correlations between radiological parameters and clinical questionnaires were sought. RESULTS: Patients and controls were found to differ significantly in terms of sagittal vertical axis, sacral slope, pelvic tilt, lumbar lordosis, and thoracic kyphosis. However, no significant intergroup difference was observed for pelvic incidence (P > 0.05). Correlation analysis revealed significant relationships between radiographic parameters and clinical outcomes. Multiple regression analysis was performed to identify predictors of clinical outcome, and the results obtained revealed that sagittal vertical axis, sacral slope, and FNBMD significantly predicted VAS, ODI, and SRS-22 scores and that LSBMD predicted SRS-22 scores. CONCLUSIONS: Osteoporotic patients and controls were found to be significantly different in terms of sagittal spinopelvic parameters. Correlation analysis revealed significant relationships between radiographic parameters and clinical outcome variables. In particular, sagittal vertical axis, sacral slope, and FNBMD significantly predicted clinical outcomes in osteoporotic patients.

Strain-Modulated Flexible Bio-Organic/Graphene/PET Sensors Based on DNA-Curcumin Biopolymer.

In recent years, there has been growing interest in the development of metal-free, environmentally friendly, and cost-effective biopolymer-based piezoelectric strain sensors (bio-PSSs) for flexible applications. In this study, we have developed a bio-PSS based on pure deoxyribonucleic acid (DNA) and curcumin materials in a thin-film form and studied its strain-induced current-voltage characteristics based on piezoelectric phenomena. The bio-PSS exhibited flexibility under varying compressive and tensile loads. Notably, the sensor achieved a strain gauge factor of 407 at an applied compressive strain of -0.027%, which is 8.67 times greater than that of traditional metal strain gauges. Furthermore, the flexible bio-PSS demonstrated a rapid response under a compressive strain of -0.08%. Our findings suggest that the proposed flexible bio-PSS holds significant promise as a motion sensor, addressing the demand for environmentally safe, wearable, and flexible strain sensor applications.

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor.

We used capacitance-voltage (C-V), conductance-voltage (G-V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 1013 eV-1∙cm-2 at 1 kHz to 1.2 × 1011 eV-1∙cm-2 at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f2-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f2-noise features moves to the subordinated frequency (~102 Hz) side.

Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor.

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (Vgs < Vth). Sharp fluctuations happen when the temperature rises with a gate voltage of Vth < Vgs < VFB. The conductance steadily decreases with increasing temperature after increasing the gate bias to Vgs > VFB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires.

Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor.

It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices. Here, we investigate the drain current (Ids)-gate voltage (Vgs) characteristics of GaN nanowire wrap-gate transistors (WGTs) for various gate potentials in the wide temperature range of 130-310 K. An anomalous reduction in the experimental barrier height and rise in the ideality factor with reducing the temperature have been perceived. It is noteworthy that the variations in barrier height and ideality factor are attributed to the spatial barrier inhomogeneities at the AlGaN/GaN interface in the GaN nanowire WGTs by assuming a double Gaussian distribution of barrier heights at 310-190 K (distribution 1) and 190-130 K (distribution 2). The standard deviation for distribution 2 is lower than that of distribution 1, which suggests that distribution 2 reflects more homogeneity at the AlGaN/GaN interface in the transistor's source/drain regions than distribution 1.

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.

We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional device without an in situ cap layer. The pulse characteristics and noise behaviors for two devices with in situ cap layers are much superior to those of the reference device without a cap layer, which means that the in situ cap layer effectively passivates the AlGaN surface. On the other hand, the device with an in situ SiCN cap layer showed the excellent device characteristics and noise performances compared to the other devices because of the reduced positive ionic charges and enhanced surface morphology caused by carbon (C) surfactant atoms during the growth of the SiCN cap layer. These results indicate that the AlGaN/GaN HEMT with the in situ SiCN cap layer is very promising for the next high-power device by replacing the conventional HEMT.

Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets.

Graphene oxide (GO) is one of the interesting ink materials owing to its fascinating properties, such as high dissolubility in water and high controllable electric properties. For versatile printing application, the viscosity of GO colloids should be controlled in order to meet the specific process requirements. Here, we report on the relatively rapid fabrication of viscosity-increased GO (VIGO) colloids mixed with electrophoretically deposited GO sheets (EPD-GO). As the GO colloid concentration, applied voltage, and deposition time increase, the viscosity of the GO colloids becomes high. The reason for the improved viscosity of GO colloids is because EPD-GO has parallel stacked GO sheets. The GO and VIGO colloids are compared and characterized using various chemical and structural analyzers. Consequently, our simple and fast method for the fabrication of GO colloids with enhanced viscosity can be used for producing inks for flexible and printed electronics.

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 µm lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

Alterations in serotonin receptors and transporter immunoreactivities in the hippocampus in the rat unilateral hypoxic-induced epilepsy model.

Unilateral hypoxic-ischemia results in the frequent occurrence of interictal spikes, and occasionally sustained ictal discharges accompanied by a reduction in paired-pulse inhibition within the non-lesioned dentate gyrus. To elucidate the roles of serotonin (5-hydroxytryptamine [5-HT]) in an epileptogenic insult, we investigated the changes in 5-HT receptors and serotonin transporter (5-HTT) immunoreactivities within the lesioned and contralateral hippocampus following unilateral hypoxic-ischemia. During epileptogenic periods following hypoxic-ischemia, both 5-HT(1A) and 5HT(1B) receptor immunoreactivities were decreased within the lesioned and the non-lesioned hippocampus. However, 5-HTT immunoreactivity was transiently increased within the hippocampus bilaterally. These findings indicate that alteration of the 5-HT system results in a "diaschisis" pattern, and may contribute to neuronal death and the development of emotional disorders in epileptic patients accompanied by psychological stress.

Nano-Thermal Analysis of Defect-Induced Surface Pre-Melting in 2D Tellurium.

Thermal properties, such as thermal conductivity, heat capacity, and melting temperature, influence the efficiency and stability of two-dimensional (2D) material applications. However, existing studies on thermal characteristics-except for thermal conductivity-are insufficient for 2D materials. Here, we investigated the melting temperature of 2D Tellurium (2D Te) using the nano-thermal analysis technique and found anomalous behavior that occurs before the melting temperature is reached. The theoretical calculations present surface pre-melting in 2D Te and Raman scattering measurements suggest that defects in 2D Te accelerate surface pre-melting. Understanding the pre-melting surface characteristics of 2D Te will provide valuable information for practical applications.

Replantation of Multilevel Amputation of the Hand of an Elderly Patient: A Case Report.

Replantation of multilevel amputation of the hand requires considerable hospital resources, and the surgical outcomes in older adults have not been described in detail. Thus, replantation for this injury was mostly confined to young patients. Here, we describe the case of a 63-year-old patient with multilevel amputation of the hand in whom replantation surgery was successful with grasp and pinch functions by the last follow-up. We report the clinical, functional, and patient-reported outcomes and discuss the indications. As the patient transfer system and communication technology develops, more patients will arrive at hospitals in a critical time for replantation. Accordingly, hand surgeons should consider offering replantation option for multilevel amputation after evaluating the indications.

Colloidal suspensions of highly reduced graphene oxide in a wide variety of organic solvents.

We report that homogeneous colloidal suspensions of chemically modified graphene sheets were readily produced in a wide variety of organic solvent systems. Two different sets of solubility parameters are used to rationalize when stable colloidal suspensions of graphene oxide sheets and, separately, of reduced graphene oxide sheets in a given solvent type are possible and when they are not. As an example of the utility of such colloidal suspensions, "paperlike" materials generated by very simple filtration of the reduced graphene oxide sheets had electrical conductivity values as high as 16,000 S/m.

Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.

We investigate the DC, C-V, and pulse performances in GaN-based nanowire gate-all-around (GAA) transistors with two kinds of geometry: one is AlGaN/GaN heterostructure with two dimensional electron gas (2DEG) channel and the other is only GaN layer without 2DEG channel. From I-V and C-V curves, the fabricated GaN nanowire GAA transistor with AlGaN layer clearly exhibits normally-on operation with negative threshold voltage (Vth) due to the existence of 2DEG channel on the trapezoidal shaped GaN nanowire. On the other hand, the GaN nanowire GAA transistor without AlGaN layer presents a positive Vth (normally-off operation) due to the absent of 2DEG channel on the triangle shaped GaN nanowire. However, both devices show the similar temperaturedependent I-V characteristics due to the combination of bulk channel and surface channel in GaN nanowire GAA channel are mostly contributed, rather than the 2DEG channel. GaN-based nanowire GAA transistors demonstrate to almost negligible current collapse phenomenon due to the perfect GAA gate structure in GaN nanowire. The proposed GaN-based nanowire GAA transistors are very promising candidate for both high power device and nano-electronics application.

Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices.

A low-cost and eco-friendly die attach process for high temperatures should be developed owing to the expansion of the field of high-temperature applications, such as high-power and high-frequency semiconductors. Pb-based and Au-based systems have been used as conventional die attach materials for high-temperature devices. However, these materials exhibit environmental problems and are expensive. Here, we show that the die attach process using the backside metal of the Ag/Sn/Ag sandwich structure is successfully developed for the mass production of Si devices. It has a low-temperature bonding process (235 °C), a high remelting temperature (above 400 °C), and rapid bonding time (20 ms). In addition, it exhibits better properties than Au-12Ge and Pb-10Sn backside metals, which are conventional materials for the high-temperature die attach process. After the die bonding process, various reliability tests of Si devices with the Ag/Sn/Ag backside metal structure were performed.

Investigation of Chemical Origin of White-Light Emission in Two-Dimensional (C4H9NH3)2PbBr4 via Infrared Nanoscopy.

The broadband light emission in low-dimensional organic lead halide perovskites (OHPs) is a fascinating property for white light-emitting diodes (LEDs). However, unique emission has been observed in highly distorted low-dimensional OHPs such as (110) and (111) perovskites. Herein, we report the first observation of white-light emission under ambient (21 °C) conditions in a rectangular microsheet of (C4H9NH3)2PbBr4, a (100) perovskite. The origin of white-light emission in (C4H9NH3)2PbBr4 was revealed as defect-assisted radiative recombination via excitation power-dependent photoluminescence measurement. Additionally, the origin of the defect was confirmed to be organic cation vacancies formed by intercalated water molecules via infrared nanoscopy. This result can help to improve the performance of white LEDs using low-dimensional OHPs.