Phase and amplitude reconstruction in single-pixel transmission microscopy: a comparison of Hadamard, cosine, and noiselet bases.

Hadamard, cosine, and noiselet bases are implemented into a digital holographic microscope based on single-pixel imaging with the capability to retrieve images of complex objects. The object is illuminated with coherent light modulated with different patterns deployed in a digital micromirror device, and the resulting fields are captured by single-pixel detection. For amplitude images, the experimental results of the three bases are evaluated with the peak SNR criteria. It is shown that the cosine basis recovers amplitude distributions with the best quality. Regarding phase images, the recovered ones compare well with those obtained with a CMOS camera.

Real-time reflectance anisotropy spectroscopy of GaAs homoepitaxy.

Reflectance anisotropy spectroscopy (RAS) is a highly sensitive optical probe for the real-time study of the epitaxial growth of zincblende semiconductors. Here we report on (1) non-equilibrium RAS spectra acquired in real time during the homoepitaxial growth of GaAs, and (2) RAS spectra for GaAs surfaces under equilibrium with several arsenic overpressures. We show that in both cases RAS spectra can be decomposed into two basic components, each with a characteristic line shape. We further show that both dynamic and equilibrium RAS spectra are described by the same pair of basic components. We conclude that the time evolution of non-equilibrium RAS spectra acquired during the epitaxial growth can be described in terms of RAS spectra for equilibrium surfaces. The results reported here should be useful for the interpretation of the physics underlying the rapid time evolution of dynamic RAS spectra during the first monolayer growth. Thus, we show that RAS constitutes a valuable tool for the study of epitaxial growth mechanisms.

Data reduction for spatially resolved reflectance anisotropy spectrometer.

We show that in spatially resolved reflectance anisotropy (RA) spectrometers, off-axis optical rays introduce a spurious signal component that cannot be addressed by optical alignment. Such a component is associated with the difference between the reflectivities s and p of the sample and depends, in a complex manner, on the incidence position of the incident light on the surface of the sample. We report a data-reduction procedure to easily identify and remove spurious RA signals associated with the off-axis optical rays, based on the singular value decomposition analysis of spatially resolved RA spectra. We validated this approach by developing a spatially resolved RA spectrometer based on an 8 × 8 multi-anode photomultiplier (PMT). The PMT allowed the use of phase-sensitive detection techniques to enhance the signal-to-noise ratio, which is essential for the evaluation of the proposed data reduction procedure.

Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001).

We describe a microreflectance difference (microRD) spectrometer based on a charge coupled device (CCD), in contrast to most common RD spectrometers that are based on a photomultiplier or a photodiode as a light detector. The advantage of our instrument over others is the possibility to isolate the RD spectrum of specific areas of the sample; thus topographic maps of the surface can be obtained. In our setup we have a maximum spatial resolution of approximately 2.50 microm x 2.50 microm and a spectral range from 1.2 to 5.5 eV. To illustrate the performance of the spectrometer, we have measured strains in mechanically polished GaAs (001) single crystals.

Note: A simple multi-channel optical system for modulation spectroscopies.

Photoreflectance-difference (PR/PRD) and reflectance-difference (RD) spectroscopies employ synchronic detection usually with lock-in amplifiers operating at moderate (200-1000 Hz) and high (50-100 KHz) modulation frequencies, respectively. Here, we report a measurement system for these spectroscopies based on a multichannel CCD spectrometer without a lock-in amplifier. In the proposed scheme, a typical PRD or RD spectrum consists of numerical subtractions between a thousand CCD captures recorded, while a photoelastic modulator is either operating or inhibited. This is advantageous and fits the slow response of CCD detectors to high modulation frequencies. The resulting spectra are processed with Savitzky-Golay filtering and compared well with those measured with conventional scanning systems based on lock-in amplifiers.

On a growth model for complex networks capable of producing power-law out-degree distributions with wide range exponents.

The out-degree distribution is one of the most reported topological properties to characterize real complex networks. This property describes the probability that a node in the network has a particular number of outgoing links. It has been found that in many real complex networks the out-degree has a behavior similar to a power-law distribution, therefore some network growth models have been proposed to approximate this behavior. This paper introduces a new growth model that allows to produce out-degree distributions that decay as a power-law with an exponent in the range from 1 to ∞.

A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution.

We report on a rapid, 32-channel reflectance-difference (RD) spectrometer with sub-second spectra acquisition times and ΔR/R sensitivity in the upper 10(-4) range. The spectrometer is based on a 50 kHz photo-elastic modulator for light polarization modulation and on a lock-in amplifier for signal harmonic analysis. Multichannel operation is allowed by multiplexing the 32 outputs of the spectrometer into the input of the lock-in amplifier. The spectrometer spans a wavelength range of 230 nm that can be tuned to cover E(1) and E(1) + Δ(1) transitions for a number of III-V semiconductors at epitaxial growth temperatures, including GaAs, InAs, AlAs, and their alloys. We present two examples of real-time measurements to demonstrate the performance of the RD spectrometer, namely, the evolution of the RD spectrum of GaAs (001) annealed at 500 °C and the time-dependent RD spectrum during the first stages of the epitaxial growth of In(0.3)Ga(0.7)As on GaAs (001) substrates.

Strain oscillations probed with light.

We show that reflectance difference spectroscopy (RDS) is sensitive to the inhomogeneous surface and thin film strain which builds up during hetero- and homoepitaxial growth. The RDS signal is affected by the local, mean square atomic displacements in the substrate resulting from the stress relaxation of strained adlayer islands. For layer-by-layer growth an oscillatory variation of the RDS intensity is observed. These results demonstrate the potentiality of RDS to probe the growth kinetics on structurally anisotropic surfaces.

Measurement of the surface strain induced by reconstructed surfaces of GaAs (001) using photoreflectance and reflectance-difference spectroscopies.

We report photoreflectance-difference and reflectance-difference measurements on reconstructed GaAs (001) surfaces. From these data the linear and quadratic electro-optic coefficient spectra are determined in the important 2.8-3.4 eV spectral region. The surface strain and fields induced by the surface reconstruction are also determined. We show experimentally that between c(4x4) and (2x4) surfaces, there is an inversion of the surface electric field which we attribute to a direct piezo-electric effect related to the surface strain induced by reconstruction.

Enhanced optical sensitivity to adsorption due to depolarization of anisotropic surface states.

Reflectance difference spectroscopy is used to probe the optical transitions between surface states on the Cu(110) surface. Upon deposition of smallest amounts of carbon monoxide (CO) the signal is strongly quenched, which translates into a huge cross section of the order of 1000 A(2) for a single adsorbed CO molecule. This strongly enhanced surface sensitivity is interpreted as the loss in anisotropy (depolarization) of the surface states due to scattering from the adsorbed CO molecules. This feature renders RDS an extremely sensitive tool to probe the adsorption kinetics on anisotropic metal surfaces.