Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method.

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

Flat-Type Gas Sensors Based on ZnO Nanorod Arrays.

ZnO seed layers were deposited on silicon and sapphire substrates by the pulsed laser deposition (PLD) method, and ZnO nanorod arrays with different orientation degrees were grown using the chemical vapor deposition (CVD) method. Flat-type gas sensors based on the ZnO nanorod arrays were fabricated, and their gas sensitivity properties were studied. The ZnO seed layer with a thickness of approximately 450 nm exhibits high c-axis orientation and possesses few defects. The ZnO nanorods fabricated on both of the substrates grow along the [0001] direction and contain a large number of oxygen vacancy defects. These nanorods have lengths of 8~10 µm and diameters of 200~500 nm. The ZnO nanorods grown on the silicon substrate are perpendicular to the surface of the substrate, and their areal density is approximately 3.0×108/cm², while those grown on the sapphire substrate exhibit a lower orientation degree, and their areal density is approximately 0.9×108/cm². The largest response of the gas sensor for gaseous alcohol reaches 48.2, and the optimal operating temperature for all of the sensors is approximately 280 °C. The gas sensitivity property of the silicon-based sensor is superior to that of the sapphire-based sensor, and the corresponding sensing mechanism is discussed.

Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method.

In this study, pulsed laser deposition method (PLD) was employed to grow MgxZn1-xO films on quartz substrates. The optimal deposition temperature of 300 °C for MgxZn1-xO film was decided and Mg0.38Zn0.62O, Mg0.56Zn0.44O and Mg0.69Zn0.31O films were grown respectively using MgxZn1-xO targets with different Mg contents (x = 0.3, 0.5 and 0.7). As-deposited Mg0.38Zn0.62O film possessed the mixed-phase (hexagonal and cubic phase) structure, appropriate band gap of 4.68 eV and smaller surface roughness of 1.72 nm, and the solar-blind photodetector (PD) based on it was fabricated. The key features of our PD are the cutoff wavelength of 265 nm lying in solar-blind band, lower dark current (Idark) of 88 pA, higher peak responsivity of 0.10 A/W and bigger Ilight/Idark ratio of 1688, which provide the new idea for the application of solar-blind PDs based on MgxZn1-xO films.

High Sensitivity NO2 Gas Sensor Based on 3D WO3 Microflowers Assembled by Numerous Nanoplates.

Tungsten oxide microflowers (WO3 MFs) were fabricated by a simple hydrothermal process through adjusting the pH of the solution by HCl. These MFs possess the outer diameters of about 2 µm and are composed of numerous nanoplates with the average pore size of 10.9 nm. Chemiresistive activity of as-fabricated WO3 MFs sensor was attempted towards oxidizing and reducing target gases, revealing a superior selectivity to NO2 with a maximum response of 22.95 (2 ppm NO2) @105 °C compared to other target gases. One of the key features of as-fabricatedWO3 MFs sensor is the lower detection limit of 125 ppb and operating temperature of 105 °C to NO2 with better reproducibility, signifying commercial prospective of the developed sensor materials. Finally, the gas sensing mechanism of WO3 MFs sensor has been proposed.

Field Emission Properties of Molybdenum Nanoparticles Decorated ZnO Nanorod Arrays.

Precisely controlled dimensions of heterostructured ZnO nanorod arrays were grown on micropatterned Au films supported by Si substrate using chemical vapor deposition (CVD). The field emission properties were attributed to pointed nanorods, thickness of catalyst, preferential growth, density, morphology of ZnO and Molybdenum (Mo) decorated ZnO nanorod arrays (Mo/ZnO). The selective restrained heterostructure approach resulted in excellent control over periodicity, location and density of ZnO nanorod arrays. Overall, field emission properties of bare ZnO nanorod arrays showed a low turn-on field of ~4.7 V/µm and a high field enhancement factor (ß) ~1686 to 7.3 V/µm and (ß) ~807 for Mo/ZnO. It was also found that the field emission properties were significantly influenced by densely decorated Mo nanoparticles on as-grown ZnO nanorod arrays.