RESUMO
Inducing superconductivity in a topological insulator can lead to novel quantum effects. However, experimental approaches to turn a topological insulator into a superconductor are limited. Here, we report on superconductivity in topological insulator Bi_{0.91}Sb_{0.09} induced via focused ion-beam deposition of a Pt thin film. The superconducting phase exhibits a Berezinski-Kosterlitz-Thouless transition, demonstrative of its two-dimensional character. From the in-plane upper critical field measurements, we estimate the superconducting thickness to be â¼17 nm for a 5.5-µm-thick sample. Our results provide evidence that the interface superconductivity could originate from the surface states of Bi_{0.91}Sb_{0.09}.
RESUMO
We report the first direct measurement of transport properties of surface states in the topological insulator Bi(0.91)Sb(0.09) (111) from the weak-field Hall effect and Shubnikov-de Haas oscillations. We find that the holelike surface band displays an unexpectedly high mobility 23,000-85,000 cm(2)/V s, which is the highest mobility so far reported in bismuth-based topological insulators. This result provides the first quantitative assessment of the effect of alloy disorder on the mobility of surface states in topological insulators. We show that the 9% alloy disorder decreases the mobility of surface states by a factor of less than 2.3.