Investigating the Mobility-Compressibility Properties of Conjugated Polymers by the Contact Film Transfer Method with Prestrain.

Up to now, researches on the mobility-stretchability of semiconducting polymers are extensively investigated, but little attention was  paid to their morphology and field-effect transistor characteristics under compressive strains, which is equally crucial in wearable electronic applications. In this work, a contact film transfer method is applied to evaluate the mobility-compressibility properties of conjugated polymers. A series of isoindigo-bithiophene conjugated polymers with symmetric carbosilane side chains (P(SiSi)), siloxane-terminated alkyl side chains (P(SiOSiO)), and combined asymmetric side chains (P(SiOSi)) are investigated. Accordingly, a compressed elastomer slab is used to transfer and compress the polymer films by releasing prestrain, and the morphology and mobility evolutions of these polymers are tracked. It is found that P(SiOSi) outperforms the other symmetric polymers including P(Si─Si) and P(SiO─SiO), having the ability to dissipate strain with its shortened lamellar spacing and orthogonal chain alignment. Notably, the mechanical durability of P(SiOSi) is also enhanced after consecutive compress-release cycles. In addition, the contact film transfer technique is demonstrated to be applicable to investigate the compressibility of different semiconducting polymers. These results demonstrate a comprehensive approach to understand the mobility-compressibility properties of semiconducting polymers under tensile and compressive strains.

Performance Enhancement of Lead-Free 2D Tin Halide Perovskite Transistors by Surface Passivation and Its Impact on Non-Volatile Photomemory Characteristics.

Two-dimensional (2D) tin (Sn)-based perovskites have recently received increasing research attention for perovskite transistor application. Although some progress is made, Sn-based perovskites have long suffered from easy oxidation from Sn2+ to Sn4+ , leading to undesirable p-doping and instability. In this study, it is demonstrated that surface passivation by phenethylammonium iodide (PEAI) and 4-fluorophenethylammonium iodide (FPEAI) effectively passivates surface defects in 2D phenethylammonium tin iodide (PEA2 SnI4 ) films, increases the grain size by surface recrystallization, and p-dopes the PEA2 SnI4 film to form a better energy-level alignment with the electrodes and promote charge transport properties. As a result, the passivated devices exhibit better ambient and gate bias stability, improved photo-response, and higher mobility, for example, 2.96 cm2 V-1 s-1 for the FPEAI-passivated films-four times higher than the control film (0.76 cm2 V-1 s-1 ). In addition, these perovskite transistors display non-volatile photomemory characteristics and are used as perovskite-transistor-based memories. Although the reduction of surface defects in perovskite films results in reduced charge retention time due to lower trap density, these passivated devices with better photoresponse and air stability show promise for future photomemory applications.

Enhancing the Performance of Electret-Free Phototransistor Memory by Using All-Conjugated Block Copolymer.

Conjugated polymers are of great interest owing to their potential in stretchable electronics to function under complex deformation conditions. To improve the performance of conjugated polymers, various structural designs have been proposed and these conjugated polymers are specially applied in exotic optoelectronics. In this work, a series of all-conjugated block copolymers (PII2T-b-PNDI2T) comprising poly(isoindigo-bithiophene) (PII2T) and poly(naphthalenediimide-bithiophene) (PNDI2T) are developed with varied compositions and applied to electret-free phototransistor memory. Accordingly, these memory devices present p-type transport capability and electrical-ON/photo-OFF memory behavior. The efficacy of the all-conjugated block copolymer design in improving the memory-photoresponse properties in phototransistor memory is revealed. By optimizing the composition of the block copolymer, the corresponding device achieves a wide memory window of 36 V and a high memory ratio of 7 × 104 . Collectively, the results of this study indicate a new concept for designing electret-free phototransistor memory by using all-conjugated block copolymer heterojunctions to mitigate the phase separation of conjugated polymer blends. Meanwhile, the intrinsic optoelectronic properties of the constituent conjugated polymers can be well-maintained by using an all-conjugated block copolymer design.

Controlled Growth of Highly Oriented Perovskite Crystals in Polymer Solutions via Selective Solvent Vapor Diffusion.

Organic-inorganic hybrid perovskites have garnered significant attention in optoelectronics owing to their outstanding tunable optical characteristics. Controlled growth of perovskite nanocrystals from solutions is key for controlling the emission intensity and photoluminescence lifetime of perovskites. In particular, most studies have focused on controlling the crystallization of perovskite through chemical treatment using chelating ligands or physical treatment via antisolvent diffusion, and there exists a trade-off between the photoluminescence intensity and lifetime of perovskites. Herein, a selective solvent vapor-assisted crystallization with the aid of a functional polymer, which nanoscale perovskite crystals are grown andante from precursor solution, is presented for tuning the crystallization and optical properties of a common halide perovskite, methylammonium lead bromide (MAPbBr3 ). The proposed method here produces perovskite nanocrystals in the range of 200-300 nm. The spin-coated thin film formed from the perovskite solution exhibits strong green photoluminescence with a long lifetime. The effects of the functional group and polymer dosage on the crystallization of MAPbBr3 are systematically investigated, and the crystallization mechanism is explained based on a modified LaMer model. This study provides an advanced solution process for precisely controlling perovskite crystallization to enhance their optical properties for next-generation optoelectronic devices.

Nano-Micro Dimensional Structures of Fiber-Shaped Luminous Halide Perovskite Composites for Photonic and Optoelectronic Applications.

Perovskite nanomaterials have been revealed as highly luminescent structures regarding their dimensional confinement. In particular, their promising potential lies behind remarkable luminescent properties, including color tunability, high photoluminescence quantum yield, and the narrow emission band of halide perovskite (HP) nanostructures for optoelectronic and photonic applications such as lightning and displaying operations. However, HP nanomaterials possess such drawbacks, including oxygen, moisture, temperature, or UV lights, which limit their practical applications. Recently, HP-containing polymer composite fibers have gained much attention owing to the spatial distribution and alignment of HPs with high mechanical strength and ambient stability in addition to their remarkable optical properties comparable to that of nanocrystals. In this review, the fabrication methods for preparing nano-microdimensional HP composite fiber structures are described. Various advantages of the luminescent composite nanofibers are also described, followed by their applications for photonic and optoelectronic devices including sensors, polarizers, waveguides, lasers, light-down converters, light-emitting diode operations, etc. Finally, future directions and remaining challenges of HP-based nanofibers are presented.

Organic-Inorganic Nanocomposite Film for High-Performance Stretchable Resistive Memory Device.

A compatible organic/inorganic nanocomposite film for a stretchable resistive memory device with high performance is demonstrated using poly(4-vinylpyridine)-block-poly(propyl methacrylate) (P4VP-b-PPMA) with zinc oxide (ZnO) nanoparticle. The PPMA soft segment is designed for reducing the rigidity of the active layer, while the P4VP block serves as a charge-trapping component to induce conductive filament and also a compatible moiety for inorganic nanoparticles through hydrogen bonding. The experimental results show that the P4VP-b-PPMA-based electrical memory device exhibits write-once-read-many-times memory behavior and an excellent ON/OFF current ratio of over 105 with a stable turn-on voltage (Vset ) around -2.0 V and stable memory behavior upon stretching up to 60% strain. On the other hand, P4VP-b-PPMA/ZnO nanocomposite film switches the memory characteristic to the dynamic random access memory behavior. The stretchable memory device prepared from the nanocomposite film can have a stretching durability over 40% strain and up to 1000 times cycling stretch-relaxation test. This work demonstrates a new strategy using nanocomposite films with tunable electrical characteristics and enhanced mechanical properties for stretchable electrical devices.

Donor-Acceptor Core-Shell Nanoparticles and Their Application in Non-Volatile Transistor Memory Devices.

Donor-acceptor crosslinked poly[poly(ethylene glycol) methyl ether-methacrylate]-block-poly[1,1'-bis(2-ethylpentyl)-6-methyl-6'-(5-methyl-3-vinylthiophen-2-yl)-[3,3'-biindoline]-2,2'-dione] (poly(PEGMA)m -b-poly(VTIID)n ) nanoparticles with various vinylthiophene donor/isoindigo acceptor ratios are synthesized successfully. The prepared nanoparticles have uniform sizes and well-defined core-shell nanostructures. The intramolecular charge transfer is effectively enhanced due to the incorporation of acceptor groups after the crosslinking reaction. A transistor memory device is assembled using the synthesized polymer and has nonvolatile flash-type memory and amphiphilic trapping behavior. The optimized devices exhibit a significant memory window of approximately 38 V, a retention ability of over 104 s, and an endurance of at least 100 cycles. This study examines multiple applications of crosslinked core-shell nanoparticles, which demonstrates their promise as charge-storage dielectric materials for use in organic memory devices.

Uniform Luminous Perovskite Nanofibers with Color-Tunability and Improved Stability Prepared by One-Step Core/Shell Electrospinning.

A one-step core/shell electrospinning technique is exploited to fabricate uniform luminous perovskite-based nanofibers, wherein the perovskite and the polymer are respectively employed in the core and the outer shell. Such a coaxial electrospinning technique enables the in situ formation of perovskite nanocrystals, exempting the needs of presynthesis of perovskite quantum dots or post-treatments. It is demonstrated that not only the luminous electrospun nanofibers can possess color-tunability by simply tuning the perovskite composition, but also the grain size of the formed perovskite nanocrystals is largely affected by the perovskite precursor stoichiometry and the polymer solution concentration. Consequently, the optimized perovskite electrospun nanofiber yields a high photoluminescence quantum yield of 30.9%, significantly surpassing the value of its thin-film counterpart. Moreover, owing to the hydrophobic characteristic of shell polymer, the prepared perovskite nanofiber is endowed with a high resistance to air and water. Its photoluminescence intensity remains constant while stored under ambient environment with a relative humidity of 85% over a month and retains intensity higher than 50% of its initial intensity while immersed in water for 48 h. More intriguingly, a white light-emitting perovskite-based nanofiber is successfully fabricated by pairing the orange light-emitting compositional perovskite with a blue light-emitting conjugated polymer.

Stretchable Fluorescent Polyfluorene/Acrylonitrile Butadiene Rubber Blend Electrospun Fibers through Physical Interaction and Geometrical Confinement.

Stretchable light-emitting polymers are important for wearable electronics; however, the development of intrinsic stretchable light-emitting materials with great performance under large applied strain is the most critical challenge. Herein, this study demonstrates the fabrication of stretchable fluorescent poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl-fluorene)]/acrylonitrile butadiene rubber (PFN/NBR) blend nanofibers using the uniaxial electrospinning technique. The physical interaction of PFN with NBR and the geometrical confinement of nanofibers are employed to reduce PFN aggregation, leading to the high photoluminescence quantum yield of 35.7%. Such fiber mat film shows stable blue emission at the 50% strain for 200 stretching/release cycles, which has potential applications in smart textiles.

Bio-Based Transparent Conductive Film Consisting of Polyethylene Furanoate and Silver Nanowires for Flexible Optoelectronic Devices.

Exploiting biomass has raised great interest as an alternative to the fossil resources for environmental protection. In this respect, polyethylene furanoate (PEF), one of the bio-based polyesters, thus reveals a great potential to replace the commonly used polyethylene terephthalate (PET) on account of its better mechanical, gas barrier, and thermal properties. Herein, a bio-based, flexible, conductive film is successfully developed by coupling a PEF plastic substrate with silver nanowires (Ag NWs). Besides the appealing advantage of renewable biomass, PEF also exhibits a good transparency around 90% in the visible wavelength range, and its constituent polar furan moiety is revealed to enable an intense interaction with Ag NWs to largely enhance the adhesion of Ag NWs grown above, as exemplified by the superior bending and peeling durability than the currently prevailing PET substrate. Finally, the efficiency of conductive PEF/Ag NWs film in fabricating efficient flexible organic thin-film transistor and organic photovoltaic (OPV) is demonstrated. The OPV device achieves a power conversion efficiency of 6.7%, which is superior to the device based on ITO/PEN device, manifesting the promising merit of the bio-based PEF for flexible electronic applications.

Syntheses of 4-Indolylquinoline Derivatives via Reductive Cyclization of Indolylnitrochalcone Derivatives by Fe/HCl.

An easy and efficient procedure for the synthesis of 4-indolylquinoline derivatives is described. This process involves two steps, the first of which is the Michael addition of indole to nitrochalcones promoted by sulfamic acid under solvent free conditions and the second step is a reductive cyclization of the indolylnitrochalcone intermediates to 4-indolylquinoline derivatives by Fe/HCl in ethanol. In both steps, the reactions are clean and the yields of products are high.

Synthesis of Bicyclic Isoxazoles and Isoxazolines via Intramolecular Nitrile Oxide Cycloaddition.

An efficient and straight forward procedure for the syntheses of bicyclic isoxazole/isoxazoline derivatives from the corresponding dimethyl-2-(2-nitro-1-aryl/alkyl)-2-(prop-2-yn-1yl)malonates or dimethyl 2-allyl-2-(2-nitro-1-aryl/alkyl ethyl)malonate is described. High yields and simple operations are important features of this methodology.

P-glycoprotein expression in Perna viridis after exposure to Prorocentrum lima, a dinoflagellate producing DSP toxins.

Bivalves naturally exposed to toxic algae have mechanisms to prevent from harmful effects of diarrhetic shellfish poisoning (DSP) toxins. However, quite few studies have examined the mechanisms associated, and the information currently available is still insufficient. Multixenobiotic resistance (MXR) is ubiquitous in aquatic invertebrates and plays an important role in defense against xenobiotics. Here, to explore the roles of P-glycoprotein (P-gp) in the DSP toxins resistance in shellfish, complete cDNA of P-gp gene in the mussel Perna viridis was cloned and analyzed. The accumulation of okadaic acid (OA), a main component of DSP toxins, MXR activity and expression of P-gp in gills of P. viridis were detected after exposure to Prorocentrum lima, a dinoflagellate producing DSP toxins in the presence or absence of P-gp inhibitors PGP-4008, verapamil (VER) and cyclosporin A (CsA). The mussel P. viridis P-gp closely matches MDR/P-gp/ABCB protein from various organisms, having a typical sequence organization as full transporters from the ABCB family. After exposure to P. lima, OA accumulation, MXR activity and P-gp expression significantly increased in gills of P. viridis. The addition of P-gp-specific inhibitors PGP-4008 and VER decreased MXR activity induced by P. lima, but had no effect on the OA accumulation in gills of P. viridis. However, CsA, a broad-spectrum inhibitor of ABC transporter not only decreased MXR activity, but also increased OA accumulation in gills of P. viridis. Together with the ubiquitous presence of other ABC transporters such as MRP/ABCC in bivalves and potential compensatory mechanism in P-gp and MRP-mediated resistance, we speculated that besides P-gp, other ABC transporters, especially MRP might be involved in the resistance mechanisms to DSP toxins.

Multilevel nonvolatile flexible organic field-effect transistor memories employing polyimide electrets with different charge-transfer effects.

The electrical memory characteristics of the n-channel organic field-effect transistors (OFETs) employing diverse polyimide (PI) electrets are reported. The synthesized PIs comprise identical electron donor and three different building blocks with gradually increasing electron-accepting ability. The distinct charge-transfer capabilities of these PIs result in varied type of memory behaviors from the write-one-read-many (WORM) to flash type. Finally, a prominent flexible WORM-type transistor memory is demonstrated and shows not only promising write-many-read-many (WMRM) multilevel data storage but also excellent mechanical and retention stability.

Value of enhancement technique in 3D-T2-STIR images of the brachial plexus.

OBJECTIVE: Imaging the brachial plexus is a challenge because of its complicated structure. The purpose of this study is to improve the diagnostic ability for brachial plexus via 3-dimensional T2-weighted short inversion time inversion recovery (3D-T2-STIR) technique with contrast agent administration. METHODS: Thirty patients with brachial plexopathies were recruited. The STIR sequences without and with contrast agent administration were performed on each subject. The grade of the diagnostic ability and the contrast ratio were assessed. RESULTS: After contrast agent administration, signals of the adjacent vessels were suppressed because of reduced T1 relaxation time similar to that of fat tissues. The outlines of nerves would be prominent with respect to surrounding tissues. Both diagnostic ability and contrast ratio were improved on 3D-T2-STIR with contrast agent administration. CONCLUSIONS: The maximum-intensity projection image of 3D-T2-STIR technique with contrast agent was superior to that without. It might be a better way to evaluate anatomies and pathologies of the brachial plexus. These advantages would improve the understanding and neurosurgical planning for brachial plexopathies in the future.

Electrical Double-Layer Transistors Comprising Block Copolymer Electrolytes for Low-Power-Consumption Photodetectors.

Electrical double-layer transistors (EDLTs) have received extensive research attention owing to their exciting advantages of low working voltage, high biocompatibility, and sensitive interfacial properties in ultrasensitive portable sensing applications. Therefore, it is of great interest to reduce photodetectors' operating voltage and power consumption by utilizing photo-EDLT. In this study, a series of block copolymers (BCPs) of poly(4-vinylpyridine)-block-poly(ethylene oxide) (P4VP-b-PEO) with different compositions were applied to formulate polyelectrolyte with indigo carmine salt in EDLT. Accordingly, PEO conduces ion conduction in the BCP electrolyte and enhances the carrier transport capability in the semiconducting channel; P4VP boosts the photocurrent by providing charge-trapping sites during light illumination. In addition, the severe aggregation of PEO is mitigated by forming a BCP structure with P4VP, enhancing the stability and photoresponse of the photo-EDLT. By optimizing the BCP composition, EDLT comprising P4VP16k-b-PEO5k and indigo carmine provides the highest specific detectivity of 2.1 × 107 Jones, along with ultralow power consumptions of 0.59 nW under 450 nm light illumination and 0.32 pW under dark state. The results indicate that photo-EDLT comprising the BCP electrolyte is a practical approach to reducing phototransistors' operating voltage and power consumption.

Reversible Molecular Conformation Transitions of Smectic Liquid Crystals for Light/Bias-Gated Transistor Memory.

In recent years, organic photonic field-effect transistors have made remarkable progress with the rapid development of conjugated polycrystalline materials. Liquid crystals, with their smooth surface, defined layer thickness, and crystalline structures, are commonly used for these advantages. In this work, a series of smectic liquid crystalline molecules, 2,9-didecyl-dinaphtho-thienothiophene (C10-DNTT), 2,7-didecyl-benzothieno-benzothiopene (C10-BTBT), 3,9-didecyl-dinaphtho-thiophene (C10-DNT), and didecyl-sexithiophene (C10-6T), have been used in photonic transistor memory, functioning as both hole-transport channels and electron traps to investigate systematically the reasons and mechanisms behind the memory behavior of smectic liquid crystals. After thermal annealing, C10-BTBT and C10-6T/C10-DNTT are homeotropically aligned from the smectic A and smectic X phases, respectively. The 3D-ordered structure of these smectic-aligned crystals contributed to efficient photowriting and electrical erasing processes. Among them, the device performance of C10-BTBT was particularly significant, with a memory window of 21 V. The memory ratio could reach 1.5 × 106 and maintain a memory ratio of over 3 orders after 10,000 s, contributing to its smectic A structure. Through the research, we confirmed the memory and light/bias-gated behaviors of these smectic liquid crystalline molecules, attributing them to reversible molecular conformation transitions and the inherent structural inhomogeneity inside the polycrystalline channel layer.

Unraveling the Effect of Stereoisomerism on Mobility-Stretchability Properties of n-Type Semiconducting Polymers with Biobased Epimers as Conjugation Break Spacers.

The development of intrinsically stretchable n-type semiconducting polymers has garnered much interest in recent years. In this study, three biobased dianhydrohexitol epimers of isosorbide (ISB), isomannide (IMN), and isoidide (IID), derived from cellulose, were incorporated into the backbone of a naphthalenediimide (NDI)-based n-type semiconducting polymer as conjugation break spacers (CBSs). Accordingly, three polymers were synthesized through the Migita-Kosugi-Stille coupling polymerization with NDI, bithiophene, and CBSs, and the mobility-stretchability properties of these polymers were investigated and compared with those of their analogues with conventional alkyl-based CBSs. Experimental results showed that the different configurations of these epimers in CBSs sufficiently modulate the melt entropies, surface aggregation, crystallographic parameters, chain entanglements, and mobility-stretchability properties. Comparable ductility and edge-on preferred stacking were observed in polymers with endo- or exo-configurations in IMN- and IID-based polymers. By contrast, ISB with endo-/exo-configurations exhibits an excellent chain-realigning capability, a reduced crack density, and a proceeding bimodal orientation under tensile strain. Therefore, the ISB-based polymer exhibits high orthogonal electron mobility retention of (53 and 56)% at 100% strain. This study is one of the few examples where biobased moieties are incorporated into semiconducting polymers as stress-relaxation units. Additionally, this is the first study to report on the effect of stereoisomerism of epimers on the morphology and mobility-stretchability properties of semiconducting polymers.

High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets.

As the research of photonic electronics thrives, the enhanced efficacy from an optic unit cell can considerably improve the performance of an optoelectronic device. In this regard, organic phototransistor memory with a fast programming/readout and a distinguished memory ratio produces an advantageous outlook to fulfill the demand for advanced applications. In this study, a hydrogen-bonded supramolecular electret is introduced into the phototransistor memory, which comprises porphyrin dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine (TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol) (PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel. The porphyrin dyes serve as the ambipolar trapping moiety, while the insulated polymers form a barrier to stabilize the trapped charges by forming hydrogen-bonded supramolecules. We find that the hole-trapping capability of the device is determined by the electrostatic potential distribution in the supramolecules, whereas the electron-trapping capability and the surface proton doping originated from hydrogen bonding and interfacial interactions. Among them, PVPh:TCPP with an optimal hydrogen bonding pattern in the supramolecular electret produces the highest memory ratio of 1.12 × 108 over 104 s, which is the highest performance among the reported achievements. Our results suggest that the hydrogen-bonded supramolecular electret can enhance the memory performance by fine-tuning their bond strength and cast light on a potential pathway to future photonic electronics.

Sustained Flexible Photonic Transistor Memories Based on Fully Natural Floating Gate Electrets.

Photonic transistor memory with high-speed communication and energy-saving capabilities has emerged as a new data storage technology. However, most floating-gate electrets are composed of quantum dots derived from petroleum or metals, which are either toxic or harmful to the environment. In this study, an environmentally friendly floating-gate electret made entirely from biomass-derived materials was designed for photonic memories. The results show that the photosensitive hemin and its derivative protoporphyrin IX (PPIX) were successfully embedded in a polylactic acid (PLA) matrix. Correspondingly, their disparate photochemistry and core structure strongly affected the photosensitivity and charge-trapping capacity of the prepared electrets. With an appropriate energy-level alignment, the interlayer exciton formed with the correct alignment of energy levels within the PPIX/PLA electret. In addition, the demetallized core offered a unique relaxation dynamic and additional trapping sites to consolidate the charges. Correspondingly, the as-prepared device exhibited a memory ratio of up to 2.5 × 107 with photo-writing-electrical-erasing characteristics. Conversely, hemin demonstrated self-charge transfer during relaxation, making it challenging for the device to store the charges and exhibit a photorecovery behavior. Furthermore, the effect of trapping site discreteness on memory performance was also investigated. The photoactive components were effectively distributed due to the high dipole-dipole interaction between the PLA matrix and PPIX, resulting in a sustained memory performance for at least 104 s after light removal. The photonic memory was also realized on a bio-derived dielectric flexible substrate. Accordingly, a reliable photorecording behavior was observed, wherein, even after 1000 cycles of bending under a 5 mm bending radius, the data was retained for more than 104 s. To our knowledge, it is the first time that a two-pronged approach has been used to improve the performance of photonic memories while addressing the issue of sustainability with a biodegradable electret made entirely from natural materials.