Large-scale two-dimensional MoS2 photodetectors by magnetron sputtering.

We report on the demonstration of photodetectors based on large scale two-dimensional molybdenum disulfide (MoS2) transition metal dichalcogenides. Excellent film uniformity and precise control of the MoS2 thickness down to a monolayer (~0.75nm) were achieved by magnetron sputtering synthesis approach. In particular, the photodetectors integrated with five MoS2 monolayers exhibit a high photoresponsivity of 1.8 A/W, an external quantum efficiency exceeding 260%, and a photodetectivity of ~5 x 10(8) Jones for a wavelength of 850 nm, surpassing the performance of mechanically exfoliated based photodetectors.

Influence of interleukin-1ß and interleukin-6 gene polymorphisms on the development of acute pancreatitis.

We investigated the association between 3 main proinflammatory cytokines [interleukin (IL)-1ß and IL-6] and the risk of acute pancreatitis. Polymerase chain reaction-restriction fragment length polymorphism was used to genotype IL-1ß+3954 C/T (rs1143634) and IL-1ß-511 C/T (rs16944) and IL-6 -174 G/C (rs1800795) and IL-6 -634 C/G (rs1800796). The genotype distributions of IL-1ß+3954 C/T (rs1143634) and IL-1ß-511 C/T (rs16944) and IL-6 -174 G/C (rs1800795) and IL-6 -634 C/G (rs1800796) were in Hardy-Weinberg equilibrium for the control group. Multivariate regression analyses showed that subjects carrying the rs1143634 TT genotype had a significantly increased risk of acute pancreatitis, with an adjusted odds ratio (95% confidence interval) of 2.11 (1.03-4.51). Subjects carrying the IL-1ß rs1143634 TT genotype had a significantly increased risk of acute pancreatitis in our Chinese population.

Low-rate sputter-deposited Fe3Si thin films on Si substrates: structural and ferromagnetic properties.

Fe3Si thin films were sputter-deposited on Si(001) substrates. Structural investigations show that Fe3Si was deposited poly-crystalline with a Si-containing layer at the Fe3Si/Si interface. The formation of the layer was attributed to the influence of low deposition rates used in this study on the grain nucleation in Fe3Si. This layer helps to stabilize the ferromagnetic properties of the subsequent annealed films at 350 degrees C with 5 Oe obtained for coercive field H(c), approximately 920 emu/cm3 for saturation magnetization M(s) and approximately 0.9M(s) for remnant magnetization M(r).

Interface properties of atomic layer deposited TiO2/Al2O3 films on In(0.53)Ga(0.47)As/InP substrates.

Electrical and interfacial properties of metal-oxide-semiconductor (MOS) capacitors fabricated using atomic layer deposited bilayer TiO2/Al2O3 films on In0.53Ga0.47As/InP substrates are reported. Vacuum annealing at 350 °C is shown to improve the interface quality. Capacitance-voltage (C-V) characteristics with higher accumulation capacitance, negligible frequency dispersion, small hysteresis and low interface state density (∼1.5 × 10(11) cm(-2) eV(-1)) have been observed for MOS capacitors. Low frequency (1/f) noise characterization and inelastic electron tunneling spectroscopy (IETS) studies have been performed to determine defects and interface traps and explain the lattice dynamics and trap state generation mechanisms. Both the IETS and 1/f noise studies reveal the spatial locations of the traps near the interface and also the nature of the traps. The IETS study further revealed the dynamic evolution of trap states related to low frequency noise sources in the deposited TiO2/Al2O3 stacks. It is shown that deposition of an ultrathin layer of TiO2 on Al2O3 can effectively control the diffusion of As in the dielectric and the oxidation states of In and Ga at the In0.53Ga0.47As surface.

Synthesis and phase evolutions in layered structure of Ga2S3 semiconductor thin films on epiready GaAs (111) substrates.

We report on synthesis and properties of p-type Ga2S3 semiconductor thin films that were prepared by sulfurizing epiready n-type GaAs (111) surface at elevated temperatures. Comparisons of structural and optical properties among the thin films, peeling-off resulted microtubes, and the remains after peeling-off give a clear clue to the crystal growth and phase evolutions of Ga2S3. Three layers of Ga2S3 are clearly identified in the thin films. They are layer i, cubic Ga2S3 epitaxially grown on the GaAs (111) substrate; layer ii, polycrystalline cubic Ga2S3 on top of layer-i; and layer iii, monoclinic and/or hexagonal Ga2S3 on top of layer ii. The onset of peeling-off occurred in layer i and/or at the interface between layer i and ii. Both the phase evolutions and the location of peeling-off are associated with a Ga out diffusion growth mechanism. Absorption spectroscopy revealed a direct bandgap of 3.0 eV, whereas photoluminescence spectra showed defects (excited Ga vacancies) related red (1.62 eV) and green (2.24 eV) emissions of the Ga2S3 films; both are qualitatively consistent with those reported values obtained at lower sample temperatures from Ga2S3 single crystals. These results, together with a large on/off current ratio (i.e., ∼14 at a bias of 4.0 V) of the resultant hetero p-Ga2S3/n-GaAs junction under a blue laser (405 nm, 3.0 mW) illumination, shed light on consequent integrations of Ga2S3- and GaAs-based optoelectronic devices, e.g., high-power laser radiation sensors.

Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.

High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial arsenic oxide (As(x)O(y)) and elemental arsenic (As) were completely removed from the GaAs surface. Energy dispersive X-ray diffraction (EDX) analysis and secondary ion mass spectroscopy (SIMS) analysis showed that TiAlO dielectric is an effective barrier layer for reducing the out-diffusion of elemental atoms, enhancing the electrical properties of bulk-GaAs based metal-oxide-semiconductor (MOS) devices. Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high quality surface passivation on epi-GaAs layers, much sought-after for high-speed transistor applications on a silicon platform. Presence of a thin AlGaAs buffer layer between epi-GaAs and Ge substrates improved interface quality and gate dielectric quality through the reduction of interfacial layer formation (Ga(x)O(y)) and suppression of elemental out-diffusion (Ga and As). The AlGaAs buffer layer and TiAlO dielectric play a key role to suppress the roughening, interfacial layer formation, and impurity diffusion into the dielectric, which in turn largely enhances the electrical property of the epi-GaAs MOS devices.