RESUMO
A carbonyl iron/carbon fiber material consisting of carbon fibers grown on micrometer-sized carbonyl iron sphere, was synthesized by chemical vapor deposition using a mixture of C2H2 and H2. The hollow-core carbon fibers (outer diameter: 140 nm and inner diameter: 40 nm) were composed of well-ordered graphene layers which were almost parallel to the long axis of the fibers. A composite (2 mm thick) consisting of the carbonyl iron/carbon fibers and epoxy resin demonstrated excellent electromagnetic (EM) wave absorption. Minimum reflection losses of -36 dB (99.95% of EM wave absorption) at 7.6 GHz and -32 dB (99.92% of EM wave absorption) at 34.1 GHz were achieved. The well-dispersed and network-like carbon fibers in the resin matrix affected the dielectric loss of the EM wave while the carbonyl iron affected the magnetic loss.
Assuntos
Ferro/química , Nanotubos de Carbono/química , Nanotubos de Carbono/ultraestrutura , Absorção , Cristalização/métodos , Campos Eletromagnéticos , Teste de Materiais , Nanotecnologia/métodos , Tamanho da Partícula , Refratometria , Espalhamento de RadiaçãoRESUMO
A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm(2)) is in the range of 2.04% - 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10,952 cd/cm(2) and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%.