RESUMO
The electronic properties of semiconducting monolayer transition-metal dichalcogenides can be tuned by electrostatic gate potentials. Here we report gate-tunable imaging and spectroscopy of monolayer MoS2 by atomic-resolution scanning tunneling microscopy/spectroscopy (STM/STS). Our measurements are performed on large-area samples grown by metal-organic chemical vapor deposition (MOCVD) techniques on a silicon oxide substrate. Topographic measurements of defect density indicate a sample quality comparable to single-crystal MoS2. From gate voltage dependent spectroscopic measurements, we determine that in-gap states exist in or near the MoS2 film at a density of 1.3 × 10(12) eV(-1) cm(-2). By combining the single-particle band gap measured by STS with optical measurements, we estimate an exciton binding energy of 230 meV on this substrate, in qualitative agreement with numerical simulation. Grain boundaries are observed in these polycrystalline samples, which are seen to not have strong electronic signatures in STM imaging.
RESUMO
We present the design and experimental comparison of femtogram L3-nanobeam photonic crystal cavities for optomechanical studies. Two symmetric nanobeams are created by placing three air slots in a silicon photonic crystal slab where three holes are removed. The nanobeams' mechanical frequencies are higher than 600 MHz with ultrasmall effective modal masses at approximately 20 femtograms. The optical quality factor (Q) is optimized up to 53,000. The optical and mechanical modes are dispersively coupled with a vacuum optomechanical coupling rate g(0)/2π exceeding 200 kHz. The anchor-loss-limited mechanical Q of the differential beam mode is evaluated to be greater than 10,000 for structures with ideally symmetric beams. The influence of variations on the air slot width and position is also investigated. The devices can be used as ultrasensitive sensors of mass, force, and displacement.