RESUMO
Designing and innovating organic structure-directing agents is the key to synthesizing novel molecular sieve structures. Herein, we design a novel carbazolyl-modified template and further synthesize a two-dimensional layered aluminophosphate with [C17H21N2]3[Al3(PO4)4]·5H2O (denoted as ZHKU-2). ZHKU-2 is composed of AA-stacked [Al3P4O16]3- layers constructed from alternating AlO4 and PO3(=O) tetrahedrons to form a 4.6.8 network featured by capped six-ring secondary building units. Carbazolyl-templated ZHKU-2 exhibits strong purple fluorescence with a high quantum yield of 25.98%. This work expands aluminophosphate materials of the [Al3P4O16]3- family and provides a view for synthesizing new molecular sieves by exploring the organic luminescence structure-directing agents.
RESUMO
The development of MoS2 as a cathode electrocatalyst for lithium-oxygen batteries (LOBs) has attracted considerable attention due to its natural abundance, excellent catalytic activity, and chemical stability. However, the sluggish and complicated kinetic of insulating and bulk discharge products on the electrode surface is one of major factors for MoS2 as a cathode for high performance LOBs. Defect engineering of an electrocatalyst and its hybridization with highly conductive frameworks are effective strategies to address this critical issue. Herein, we report a hybrid of rich sulfur-defective MoS2 (MoS2-x) nanosheets grown on highly conductive holey expanded graphite (hEG) with well-defined "worm-like" and holey structures (MoS2-x/hEG). Benefiting from rich sulfur defects of MoS2-x and the highly conductive nature and holey structures of hEG, the MoS2-x/hEG hybrid as a cathode for LOBs displays outstanding electrochemical performance with an extremely high discharge capacity of 19000.3 mAh g-1 at 500 mA g-1 and an ultralong cycling life of over 500 cycles at 1000 mA g-1 with a controlled specific capacity of 1000 mAh g-1.
RESUMO
Modern magnetic-memory technology requires all-electric control of perpendicular magnetization with low energy consumption. While spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) heterostructures1-5 holds promise for applications in magnetic random access memory, until today, it has been limited to the in-plane direction. Such in-plane torque can switch perpendicular magnetization only deterministically with the help of additional symmetry breaking, for example, through the application of an external magnetic field2,4, an interlayer/exchange coupling6-9 or an asymmetric design10-14. Instead, an out-of-plane SOT15 could directly switch perpendicular magnetization. Here we observe an out-of-plane SOT in an HM/FM bilayer of L11-ordered CuPt/CoPt and demonstrate field-free switching of the perpendicular magnetization of the CoPt layer. The low-symmetry point group (3m1) at the CuPt/CoPt interface gives rise to this spin torque, hereinafter referred to as 3m torque, which strongly depends on the relative orientation of the current flow and the crystal symmetry. We observe a three-fold angular dependence in both the field-free switching and the current-induced out-of-plane effective field. Because of the intrinsic nature of the 3m torque, the field-free switching in CuPt/CoPt shows good endurance in cycling experiments. Experiments involving a wide variety of SOT bilayers with low-symmetry point groups16,17 at the interface may reveal further unconventional spin torques in the future.
RESUMO
Spin-orbit torque (SOT) offers promising approaches to developing energy-efficient memory devices by electric switching of magnetization. Compared to other SOT materials, metallic antiferromagnet (AFM) potentially allows the control of SOT through its magnetic structure. Here, combining the results from neutron diffraction and spin-torque ferromagnetic resonance experiments, we show that the magnetic structure of epitaxially grown L10-IrMn (a collinear AFM) is distinct from the widely presumed bulk one. It consists of twin domains, with the spin axes orienting toward [111] and [-111], respectively. This unconventional magnetic structure is responsible for much larger SOT efficiencies up to 0.60 ± 0.04, compared to 0.083 ± 0.002 for the polycrystalline IrMn. Furthermore, we reveal that this magnetic structure induces a large isotropic bulk contribution and a comparable anisotropic interfacial contribution to the SOT efficiency. Our findings shed light on the critical roles of bulk and interfacial antiferromagnetism to SOT generated by metallic AFM.