All-perovskite tandem solar cells with 3D/3D bilayer perovskite heterojunction.

All-perovskite tandem solar cells promise higher power-conversion efficiency (PCE) than single-junction perovskite solar cells (PSCs) while maintaining a low fabrication cost1-3. However, their performance is still largely constrained by the subpar performance of mixed lead-tin (Pb-Sn) narrow-bandgap (NBG) perovskite subcells, mainly because of a high trap density on the perovskite film surface4-6. Although heterojunctions with intermixed 2D/3D perovskites could reduce surface recombination, this common strategy induces transport losses and thereby limits device fill factors (FFs)7-9. Here we develop an immiscible 3D/3D bilayer perovskite heterojunction (PHJ) with type II band structure at the Pb-Sn perovskite-electron-transport layer (ETL) interface to suppress the interfacial non-radiative recombination and facilitate charge extraction. The bilayer PHJ is formed by depositing a layer of lead-halide wide-bandgap (WBG) perovskite on top of the mixed Pb-Sn NBG perovskite through a hybrid evaporation-solution-processing method. This heterostructure allows us to increase the PCE of Pb-Sn PSCs having a 1.2-µm-thick absorber to 23.8%, together with a high open-circuit voltage (Voc) of 0.873 V and a high FF of 82.6%. We thereby demonstrate a record-high PCE of 28.5% (certified 28.0%) in all-perovskite tandem solar cells. The encapsulated tandem devices retain more than 90% of their initial performance after 600 h of continuous operation under simulated one-sun illumination.

Boosting Perovskite Solar Cells Efficiency and Stability: Interfacial Passivation of Crosslinked Fullerene Eliminates the "Burn-in" Decay.

Perovskite solar cells (PSCs) longevity is nowadays the bottleneck for their full commercial exploitation. Although lot of research is ongoing, the initial decay of the output power - an effect known as "burn-in" degradation happening in the first 100 h - is still unavoidable, significantly reducing the overall performance (typically of >20%). In this paper, the origin of the "burn-in" degradation in n-i-p type PSCs is demonstrated that is directly related to Li+ ions migration coming from the SnO2 electron transporting layer visualized by time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurements. To block the ion movement, a thin cross-linked [6,6]-phenyl-C61-butyric acid methyl ester layer on top of the SnO2 layer is introduced, resulting in Li+ immobilization. This results in the elimination of the "burn-in" degradation, showing for the first time a zero "burn-in" loss in the performances while boosting device power conversion efficiency to >22% for triple-cation-based PSCs and >24% for formamidinium-based (FAPbI3 ) PSCs, proving the general validity of this approach and creating a new framework for the realization of stable PSCs devices.