Thin-Film-Based SAW Magnetic Field Sensors.

In this work, the first surface acoustic-wave-based magnetic field sensor using thin-film AlScN as piezoelectric material deposited on a silicon substrate is presented. The fabrication is based on standard semiconductor technology. The acoustically active area consists of an AlScN layer that can be excited with interdigital transducers, a smoothing SiO2 layer, and a magnetostrictive FeCoSiB film. The detection limit of this sensor is 2.4 nT/Hz at 10 Hz and 72 pT/Hz at 10 kHz at an input power of 20 dBm. The dynamic range was found to span from about ±1.7 mT to the corresponding limit of detection, leading to an interval of about 8 orders of magnitude. Fabrication, achieved sensitivity, and noise floor of the sensors are presented.

A Comparative Study of Pt/Al0.72Sc0.28N/Pt-Based Thin-Film Metal-Ferroelectric-Metal Capacitors on GaN and Si Substrates.

AlxSc1-xN is a nitride-ferroelectric compatible with both CMOS and GaN technology. The origin of ferroelectricity in these ternary nitrides relies on the full inversion of nitrogen atom positions, which is a significantly different structural mechanism than conventional perovskites. Therefore, its ferroelectric characteristics exhibit a high remanent polarization and a tunable coercive field but suffer heavily from leakage currents during the switching event. In this article, we studied epitaxially grown Al0.72Sc0.28N thin films on epitaxial Pt electrode layers deposited on GaN/Al2O3 substrates. The results are compared both structurally and electrically with similar systems on SiO2/Si substrates. Our X-ray diffraction analysis showed that Al0.72Sc0.28N/epi-Pt/GaN is always a complete epitaxial stack without any significant strain gradient. Electrically, this system has an overall lower leakage current and coercive field compared to directly grown, highly crystalline, strained epitaxial Al0.72Sc0.28N/GaN, despite having a lower crystalline quality of the ferroelectric layer. In addition, decreasing the epi-Pt thickness from 100 to 10 nm resulted in further improvement of the leakage profile, which we attribute to a decrease in surface roughness in the thinner Pt. In contrast, the dominant factor of leakage in a fiber-textured system on Si substrates is the Pt(111) texture. Finally, with the combination of in-plane X-ray diffraction and high-resolution scanning transmission electron microscopy, we have demonstrated an all-epitaxial 20 nm Al0.72Sc0.28N/Pt/GaN MFM stack with a sharp interface thickness of less than 1 nm.

In-Grain Ferroelectric Switching in Sub-5 nm Thin Al0.74 Sc0.26 N Films at 1 V.

Analog switching in ferroelectric devices promises neuromorphic computing with the highest energy efficiency if limited device scalability can be overcome. To contribute to a solution, one reports on the ferroelectric switching characteristics of sub-5 nm thin Al0.74 Sc0.26 N films grown on Pt/Ti/SiO2 /Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, the study focuses on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of ultrathin Al1-x Scx N films on epitaxial templates, a significantly larger coercive field (Ec ) to breakdown field ratio is observed for Al0.74 Sc0.26 N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy (STEM) investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries (IDB) within single nm-sized grains supports the theory of a gradual domain-wall driven switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.

Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N.

The discovery of ferroelectricity in aluminum scandium nitride (Al1-xScxN) opens technological perspectives for harsh environments and space-related memory applications, considering the high-temperature stability of piezoelectricity in aluminum nitride. The ferroelectric and material properties of 100 nm-thick Al0.72Sc0.28N are studied up to 873 K, combining both electrical and in situ X-ray diffraction measurements as well as transmission electron microscopy and energy-dispersive X-ray spectroscopy. The present work demonstrates that Al0.72Sc0.28N can achieve high switching polarization and tunable coercive fields in a 375 K temperature range from room temperature up to 673 K. The degradation of the ferroelectric properties in the capacitors is observed above this temperature. Reduction of the effective top electrode area and consequent oxidation of the Al0.72Sc0.28N film are mainly responsible for this degradation. A slight variation of the Sc concentration is quantified across grain boundaries, even though its impact on the ferroelectric properties cannot be isolated from those brought by the top electrode deterioration and Al0.72Sc0.28N oxidation. The Curie temperature of Al0.72Sc0.28N is confirmed to be above 873 K, thus corroborating the promising thermal stability of this ferroelectric material. The present results further support the future adoption of Al1-xScxN in memory technologies for harsh environments like applications in space missions.

Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion.

Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al1−xScxN thin films on sapphire Al2O3(0001) with Sc concentrations x (x = 0, 0.09, 0.23, 0.32, 0.40) using in situ X-ray diffraction analyses up to 1100 °C. The selected Al1−xScxN thin films were grown with epitaxial and fiber textured microstructures of high crystal quality, dependent on the choice of growth template, e.g., epitaxial on Al2O3(0001) and fiber texture on Mo(110)/AlN(0001)/Si(100). The presented studies expose an anomalous regime of thermal expansion at high temperatures >~600 °C, which is described as an isotropic expansion of a and c lattice parameters during annealing. The collected high-temperature data suggest differentiation of the observed thermal expansion behavior into defect-coupled intrinsic and oxygen-impurity-coupled extrinsic contributions. In our hypothesis, intrinsic effects are denoted to the thermal activation, migration and curing of defect structures in the material, whereas extrinsic effects describe the interaction of available oxygen species with these activated defect structures. Their interaction is the dominant process at high temperatures >800 °C resulting in the stabilization of larger modifications of the unit cell parameters than under exclusion of oxygen. The described phenomena are relevant for manufacturing and operation of new Al1−xScxN-based devices, e.g., in the fields of high-temperature resistant memory or power electronic applications.

Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates.

In this work, we present a method for growing highly c-axis oriented aluminum scandium nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO2) and epitaxial polysilicon (poly-Si) substrates using a substrate independent approach. The presented method offers great advantages in applications such as piezoelectric thin-film-based surface acoustic wave devices where a metallic seed layer cannot be used. The approach relies on a thin AlN layer to establish a wurtzite nucleation layer for the growth of w-AlScN films. Both AlScN thin film and seed layer AlN are prepared by DC reactive magnetron sputtering process where a Sc concentration of 27% is used throughout this study. The crystal quality of (0002) orientation of Al0.73Sc0.27N films on all three substrates is significantly improved by introducing a 20 nm AlN seed layer. Although AlN has a smaller capacitance than AlScN, limiting the charge stored on the electrode plates, the combined piezoelectric coefficient d33,f with 500 nm AlScN is only slightly reduced by about 4.5% in the presence of the seed layer.

A spiking and adapting tactile sensor for neuromorphic applications.

The ongoing research on and development of increasingly intelligent artificial systems propels the need for bio inspired pressure sensitive spiking circuits. Here we present an adapting and spiking tactile sensor, based on a neuronal model and a piezoelectric field-effect transistor (PiezoFET). The piezoelectric sensor device consists of a metal-oxide semiconductor field-effect transistor comprising a piezoelectric aluminium-scandium-nitride (AlxSc1-xN) layer inside of the gate stack. The so augmented device is sensitive to mechanical stress. In combination with an analogue circuit, this sensor unit is capable of encoding the mechanical quantity into a series of spikes with an ongoing adaptation of the output frequency. This allows for a broad application in the context of robotic and neuromorphic systems, since it enables said systems to receive information from the surrounding environment and provide encoded spike trains for neuromorphic hardware. We present numerical and experimental results on this spiking and adapting tactile sensor.

Complex Magnetic Exchange Coupling between Co Nanostructures and Ni(111) across Epitaxial Graphene.

We report on the magnetic coupling between isolated Co atoms as well as small Co islands and Ni(111) mediated by an epitaxial graphene layer. X-ray magnetic circular dichroism and scanning tunneling microscopy combined with density functional theory calculations reveal that Co atoms occupy two distinct adsorption sites, with different magnetic coupling to the underlying Ni(111) surface. We further report a transition from an antiferromagnetic to a ferromagnetic coupling with increasing Co cluster size. Our results highlight the extreme sensitivity of the exchange interaction mediated by graphene to the adsorption site and to the in-plane coordination of the magnetic atoms.