Formation of oriented nanostructures in diamond using metallic nanoparticles.

A simple, fast and cost-effective etching technique to create oriented nanostructures such as pyramidal and cylindrical shaped nanopores in diamond membranes by self-assembled metallic nanoparticles is proposed. In this process, a diamond film is annealed with thin metallic layers in a hydrogen atmosphere. Carbon from the diamond surface is dissolved into nanoparticles generated from the metal film, then evacuated in the form of hydrocarbons and, consequently, the nanoparticles enter the crystal volume. In order to understand and optimize the etching process, the role of different parameters such as type of catalyst (Ni, Co, Pt, and Au), hydrogen gas, temperature and time of annealing, and microstructure of diamond (polycrystalline and nanocrystalline) were investigated. With this technique, nanopores with lateral sizes in the range of 10-100 nm, and as deep as about 600 nm, in diamond membranes were produced without any need for a lithography process, which opens the opportunities for fabricating porous diamond membranes for chemical sensing applications.

Thermoluminescent properties of Ni and Co doped synthetic, high pressure, high temperature diamonds: application to ionising radiation dosimetry.

An investigation of the thermoluminescence (TL) properties of high pressure, high temperature (HPHT) synthetic diamond crystals grown under diluted nickel or cobalt as solvent catalysts is reported. After a study of TL properties of 6 different samples, it is shown that a crystal grown with Ni+2%Ti and annealed at 2100 K presents an intense glow peak at around 490 K. This peak is characterised by a broad emission band centred at 530 nm (2.34 eV). This crystal presents a significant, reproducible and linear TL response relative to the absorbed dose up to an X ray air kerma of 10 Gy. All these features make this material suitable for ionising radiation dosimetry. A similar study is made on another crystal grown from pure Co, and a comparative review of the results does show that for dosimetry work, Ni-containing diamonds are more appropriate than those grown from Co catalyst.

Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films.

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.