Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga.

The equilibrium atomic interface structure between Ga and GaN(0001) is shown to contain substrate surface vacancies followed by substrate-induced layering and preferential lateral ordering in the liquid. The uncovered presence of point defects, in the form of vacancies at both sides of the solid-liquid interface, is an important structural feature which governs the local physical properties. Our x-ray diffraction study reveals that the layering is very stable and persists up to a temperature of 1123 K and a nitrogen pressure of 32 bar. The Ga layer spacing agrees remarkably well with the Friedel oscillation period for this system.

Carrier recombination under one-photon and two-photon excitation in GaN epilayers.

Luminescence properties of 100-mum thick GaN epilayers grown by hydride vapor phase epitaxy (HVPE) over three different substrates: high-pressure grown n-type bulk GaN (HP-n-GaN), high-pressure bulk GaN doped with magnesium (HP-GaN:Mg), and free-standing HVPE lifted-off from sapphire (FS-HVPE-GaN), were compared by means of one-photon and two-photon excitations. The contribution of carrier capture to nonradiative traps was estimated by the analysis of luminescence transients with carrier diffusion taken into account. The estimated values of carrier lifetime of about 3ns and diffusion coefficient of 1cm(2)/s indicate the highest quality of GaN epilayers on FS-HVPE-GaN substrates.

Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering.

We have investigated the lattice dynamics of a wurtzite GaN single crystal by inelastic x-ray scattering. Several dispersion branches and phonons at high-symmetry points have been measured, including the two zone-center Raman- and infrared-inactive silent modes. The experiments have been complemented by ab initio calculations. They are in very good agreement with our measurements, not only for phonon energies, but also for scattering intensities, thus validating the correctness of the eigenvectors. Other phenomenological and ab initio theories exhibit significant differences.

Fine structure of effective mass acceptors in gallium nitride.

Magnetoluminescence of the exciton bound to a neutral acceptor was measured to investigate the electronic structure of a shallow acceptor center in GaN. The application of magnetic fields along different directions with respect to the crystal c axis allowed us to determine the symmetry of the ground (Gamma(9)) and the first excited state (Gamma(7)) of the acceptor. The observed Zeeman splitting pattern has axial symmetry but can be explained well only by assuming a significant reduction of the spin-orbit interaction for this acceptor state. Because of this reduction, the energy structure of the neutral acceptor is found to be very sensitive to any local, axial perturbation.