Breaking the icosahedra in boron carbide.

Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and characterization of individual ionization events gives unexpected evidence of the destruction of individual icosahedra. Statistical analyses of the ions created during the field evaporation process have been used to deduce relative atomic bond strengths and show that the icosahedra in boron carbide are not as stable as anticipated. Combined with quantum mechanics simulations, this result provides insight into the structural instability and amorphization of boron carbide. The temporal, spatial, and compositional information provided by atom probe tomography makes it a unique platform for elucidating the relative stability and interactions of primary building blocks in hierarchically crystalline materials.

Erratum: New Ground-State Crystal Structure of Elemental Boron [Phys. Rev. Lett. 117, 085501 (2016)].

This corrects the article DOI: 10.1103/PhysRevLett.117.085501.

Superstrength through Nanotwinning.

The theoretical strength of a material is the minimum stress to deform or fracture the perfect single crystal material that has no defects. This theoretical strength is considered as an upper bound on the attainable strength for a real crystal. In contradiction to this expectation, we use quantum mechanics (QM) simulations to show that for the boron carbide (B4C) hard ceramic, this theoretical shear strength can be exceeded by 11% by imposing nanoscale twins. We also predict from QM that the indentation strength of nanotwinned B4C is 12% higher than that of the perfect crystal. Further, we validate this effect experimentally, showing that nanotwinned samples are harder by 2.3% than the twin-free counterpart of B4C. The origin of this strengthening mechanism is suppression of twin boundary (TB) slip within the nanotwins due to the directional nature of covalent bonds at the TB.

New Ground-State Crystal Structure of Elemental Boron.

Elemental boron exhibits many polymorphs in nature based mostly on an icosahedral shell motif, involving stabilization of 13 strong multicenter intraicosahedral bonds. It is commonly accepted that the most thermodynamic stable structure of elemental boron at atmospheric pressure is the ß rhombohedral boron (ß-B). Surprisingly, using high-resolution transmission electron microscopy, we found that pure boron powder contains grains of two different types, the previously identified ß-B containing a number of randomly spaced twins and what appears to be a fully transformed twinlike structure. This fully transformed structure, denoted here as τ-B, is based on the Cmcm orthorhombic space group. Quantum mechanics predicts that the newly identified τ-B structure is 13.8 meV/B more stable than ß-B. The τ-B structure allows 6% more charge transfer from B_{57} units to nearby B_{12} units, making the net charge 6% closer to the ideal expected from Wade's rules. Thus, we predict the τ-B structure to be the ground state structure for elemental boron at atmospheric pressure.

A High-Capacitance Salt-Free Dielectric for Self-Healable, Printable, and Flexible Organic Field Effect Transistors and Chemical Sensor.

Printable and flexible electronics attract sustained attention for their low cost, easy scale up, and potential application in wearable and implantable sensors. However, they are susceptible to scratching, rupture, or other damage from bending or stretching due to their "soft" nature compared to their rigid counterparts (Si-based electronics), leading to loss of functionality. Self-healing capability is highly desirable for these "soft" electronic devices. Here, a versatile self-healing polymer blend dielectric is developed with no added salts and it is integrated into organic field transistors (OFETs) as a gate insulator material. This polymer blend exhibits an unusually high thin film capacitance (1400 nF cm -2 at 120 nm thickness and 20-100 Hz). Furthermore, it shows pronounced electrical and mechanical self-healing behavior, can serve as the gate dielectric for organic semiconductors, and can even induce healing of the conductivity of a layer coated above it together with the process of healing itself. Based on these attractive properties, we developed a self-healable, low-voltage operable, printed, and flexible OFET for the first time, showing promise for vapor sensing as well as conventional OFET applications.

Atomic-Level Understanding of "Asymmetric Twins" in Boron Carbide.

Recent observations of planar defects in boron carbide have been shown to deviate from perfect mirror symmetry and are referred to as "asymmetric twins." Here, we demonstrate that these asymmetric twins are really phase boundaries that form in stoichiometric B(4)C (i.e., B(12)C(3)) but not in B(13)C(2). TEM observations and ab initio simulations have been coupled to show that these planar defects result from an interplay of stoichiometry, atomic positioning, icosahedral twinning, and structural hierarchy. The composition of icosahedra in B(4)C is B(11)C and translation of the carbon atom from a polar to equatorial site leads to a shift in bonding and a slight distortion of the lattice. No such distortion is observed in boron-rich B(13)C(2) because the icosahedra do not contain carbon. Implications for tailoring boron carbide with stoichiometry and extrapolations to other hierarchical crystalline materials are discussed.

Twin boundary migration mechanisms in quasi-statically compressed and plate-impacted Mg single crystals.

Twinning is a prominent deformation mode that accommodates plasticity in many materials. This study elucidates the role of deformation rate on the atomic-scale mechanisms that govern twin boundary migration. Examination of Mg single crystals deformed under quasi-static compression was compared with crystals deformed via plate impact. Evidence of two mechanisms was uncovered. Atomic-level observations using high-resolution transmission electron microscopy revealed that twin boundaries in the -axis quasi-statically compressed single crystals are relatively smooth. At these modest stresses and rates, the twin boundaries were found to migrate predominantly via shear (i.e., disconnection nucleation and propagation). By contrast, in the plate-impacted crystals, which are subjected to higher stresses and rates, twin boundary migration was facilitated by local atomic shuffling and rearrangement, resulting in rumpled twin boundaries. This rate dependency also leads to marked variations in twin variant, size, and number density in Mg. Analogous effects are anticipated in other hexagonal closed-packed crystals.

Tuning the deformation mechanisms of boron carbide via silicon doping.

Boron carbide suffers from a loss of strength and toughness when subjected to high shear stresses due to amorphization. Here, we report that a small amount of Si doping (~1 atomic %) leads to a substantial decrease in stress-induced amorphization due to a noticeable change of the deformation mechanisms in boron carbide. In the undoped boron carbide, the Berkovich indentation-induced quasi-plasticity is dominated by amorphization and microcracking along the amorphous shear bands. This mechanism resulted in long, distinct, and single-variant shear faults. In contrast, substantial fragmentation with limited amorphization was activated in the Si-doped boron carbide, manifested by the short, diffuse, and multivariant shear faults. Microcracking via fragmentation competed with and subsequently mitigated amorphization. This work highlights the important roles that solute atoms play on the structural stability of boron carbide and opens up new avenues to tune deformation mechanisms of ceramics via doping.

Nanotwinned metal MEMS films with unprecedented strength and stability.

Silicon-based microelectromechanical systems (MEMS) sensors have become ubiquitous in consumer-based products, but realization of an interconnected network of MEMS devices that allows components to be remotely monitored and controlled, a concept often described as the "Internet of Things," will require a suite of MEMS materials and properties that are not currently available. We report on the synthesis of metallic nickel-molybdenum-tungsten films with direct current sputter deposition, which results in fully dense crystallographically textured films that are filled with nanotwins. These films exhibit linear elastic mechanical behavior and tensile strengths exceeding 3 GPa, which is unprecedented for materials that are compatible with wafer-level device fabrication processes. The ultrahigh strength is attributed to a combination of solid solution strengthening and the presence of dense nanotwins. These films also have excellent thermal and mechanical stability, high density, and electrical properties that are attractive for next-generation metal MEMS applications.

Nucleation of amorphous shear bands at nanotwins in boron suboxide.

The roles of grain boundaries and twin boundaries in mechanical properties are well understood for metals and alloys. However, for covalent solids, their roles in deformation response to applied stress are not established. Here we characterize the nanotwins in boron suboxide (B6O) with twin boundaries along the {0111} planes using both scanning transmission electron microscopy and quantum mechanics. Then, we use quantum mechanics to determine the deformation mechanism for perfect and twinned B6O crystals for both pure shear and biaxial shear deformations. Quantum mechanics suggests that amorphous bands nucleate preferentially at the twin boundaries in B6O because the twinned structure has a lower maximum shear strength by 7.5% compared with perfect structure. These results, which are supported by experimental observations of the coordinated existence of nanotwins and amorphous shear bands in B6O, provide a plausible atomistic explanation for the influence of nanotwins on the deformation behaviour of superhard ceramics.

Shock-induced localized amorphization in boron carbide.

High-resolution electron microscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragranular amorphous bands that occur parallel to specific crystallographic planes and contiguously with apparent cleaved fracture surfaces. This damage mechanism explains the measured, but not previously understood, decrease in the ballistic performance of boron carbide at high impact rates and pressures. The formation of these amorphous bands is also an example of how shock loading can result in the synthesis of novel structures and materials with substantially altered properties.

Deformation twinning in nanocrystalline aluminum.

We report transmission electron microscope observations that provide evidence of deformation twinning in plastically deformed nanocrystalline aluminum. The presence of these twins is directly related to the nanocrystalline structure, because they are not observed in coarse-grained pure aluminum. We propose a dislocation-based model to explain the preference for deformation twins and stacking faults in nanocrystalline materials. These results underscore a transition from deformation mechanisms controlled by normal slip to those controlled by partial dislocation activity when grain size decreases to tens of nanometers, and they have implications for interpreting the unusual mechanical behavior of nanocrystalline materials.