Core/Shell-Like Localized Emission at Atomically Thin Semiconductor-Au Interface.

Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, we report the observation of core/shell-like localized emission from monolayer WSe2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe2-Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.

Enhancing Single Photon Emission Purity via Design of van der Waals Heterostructures.

Quantum emitters are essential components of quantum photonic circuitry envisioned beyond the current optoelectronic state-of-the-art. Two dimensional materials are attractive hosts for such emitters. However, the high single photon purity required is rarely realized due to the presence of spectrally degenerate classical light originating from defects. Here, we show that design of a van der Waals heterostructure effectively eliminates this spurious light, resulting in purities suitable for a variety of quantum technological applications. Single photon purity from emitters in monolayer WSe2 increases from 60% to 92% by incorporating this monolayer in a simple graphite/WSe2 heterostructure. Fast interlayer charge transfer quenches a broad photoluminescence background by preventing radiative recombination through long-lived defect bound exciton states. This approach is generally applicable to other 2D emitter materials, circumvents issues of material quality, and offers a path forward to achieve the ultrahigh single photon purities ultimately required for photon-based quantum technologies.

Self-Hybridized Polaritonic Emission from Layered Perovskites.

Light-matter coupling in excitonic materials has been the subject of intense recent investigations due to emergence of new materials. Two-dimensional layered hybrid organic/inorganic perovskites (2D HOIPs) support strongly bound excitons at room temperature with some of the highest oscillator strengths and electric loss tangents among the known excitonic materials. Here, we report strong light-matter coupling in Ruddlesden-Popper phase 2D HOIP crystals without the necessity of an external cavity. We report the concurrent occurrence of multiple orders of hybrid light-matter states via both reflectance and luminescence spectroscopy in thick (>100 nm) crystals and near-unity absorption in thin (<20 nm) crystals. We observe resonances with quality factors of >250 in hybridized exciton-polaritons and identify a linear correlation between exciton-polariton mode splitting and extinction coefficient of the various 2D HOIPs. Our work opens the door to studying polariton dynamics in self-hybridized and open cavity systems with broad applications in optoelectronics and photochemistry.

Tunable Doppler shift using a time-varying epsilon-near-zero thin film near 1550 nm.

We experimentally investigate the tunable Doppler shift in an 80 nm thick indium-tin-oxide (ITO) film at its epsilon-near-zero (ENZ) region. Under strong and pulsed excitation, ITO exhibits a time-varying change in the refractive index. A maximum frequency redshift of 1.8 THz is observed in the reflected light when the pump light has a peak intensity of ∼140GW/cm2 and a pulse duration of ∼580fs, at an incident angle of 40°. The frequency shift increases with the increase in pump intensity and saturates at the intensity of ∼140GW/cm2. When the pump pulse duration increases from ∼580fs to ∼1380fs, the maximum attainable frequency shift decreases from 1.8 THz to 0.7 THz. In addition, the pump energy required to saturate the frequency shift decreases with the increase in pump pulse duration for ∼x<1ps and remains unchanged for ∼x>1ps durations. Tunability exists among the pump pulse energy, duration, and incident angle for the Doppler shift of the ITO-ENZ material, which can be employed to design efficient frequency shifters for telecom applications.

Primary care competition and quality of care: Empirical evidence from Medicare.

In this paper, we explore the effects of primary care physician (PCP) practice competition on five distinct quality metrics directly tied to screening, follow-up care, and prescribing behavior under Medicare Part B and D. Controlling for physician, practice, and area characteristics as well as zip code fixed effects, we find strong evidence that PCP practices in more concentrated areas provide lower quality of care. More specifically, PCPs in more concentrated areas are less likely to perform screening and follow-up care for high blood pressure, unhealthy bodyweight, and tobacco use. They are also less likely to document current medications. Furthermore, PCPs in more concentrated areas have a higher amount of opioid prescriptions as a fraction of total prescriptions.

Spectrally tunable infrared plasmonic F,Sn:In2O3 nanocrystal cubes.

A synthetic challenge in faceted metal oxide nanocrystals (NCs) is realizing tunable localized surface plasmon resonance (LSPR) near-field response in the infrared (IR). Cube-shaped nanoparticles of noble metals exhibit LSPR spectral tunability limited to visible spectral range. Here, we describe the colloidal synthesis of fluorine, tin codoped indium oxide (F,Sn:In2O3) NC cubes with tunable IR range LSPR for around 10 nm particle sizes. Free carrier concentration is tuned through controlled Sn dopant incorporation, where Sn is an aliovalent n-type dopant in the In2O3 lattice. F shapes the NC morphology into cubes by functioning as a surfactant on the {100} crystallographic facets. Cube shaped F,Sn:In2O3 NCs exhibit narrow, shape-dependent multimodal LSPR due to corner, edge, and face centered modes. Monolayer NC arrays are fabricated through a liquid-air interface assembly, further demonstrating tunable LSPR response as NC film nanocavities that can heighten near-field enhancement (NFE). The tunable F,Sn:In2O3 NC near-field is coupled with PbS quantum dots, via the Purcell effect. The detuning frequency between the nanocavity and exciton is varied, resulting in IR near-field dependent enhanced exciton lifetime decay. LSPR near-field tunability is directly visualized through IR range scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS). STEM-EELS mapping of the spatially confined near-field in the F,Sn:In2O3 NC array interparticle gap demonstrates elevated NFE tunability in the arrays.

Angle- and polarization-independent mid-infrared narrowband optical filters using dense arrays of resonant cavities.

We report design and experimental verification of narrowband mid-infrared optical filters with transmission characteristics that are practically constant over a wide range of incident angles. The filter employs a dense array of dielectric resonant cavities in a metal film, where the transmission of each cavity depends upon localized rather than travelling fields, making the filter fundamentally angle-independent. We show experimentally a transmission around 90% from normal incidence up to 60°. Simulations show that the filter becomes polarization-independent when geometry of the cavities is azimuthally symmetric.

Improved 2 × 2 Mach-Zehnder switching using coupled-resonator photonic-crystal nanobeams.

Design and simulation results are presented for an on-chip 2×2 Mach-Zehnder-based optical switch where each arm of the interferometer is composed of a coupled-resonator optical waveguide. The individual resonators are one-dimensional photonic crystal nanobeam cavities, and switching occurs through thermally induced changes in the refractive index of the silicon structure using integrated heating pads. The performance of the coupled-resonator device is directly compared to its single resonator counterpart, and significant improvement is found in the bar-state CT metric.

Single Defect Light-Emitting Diode in a van der Waals Heterostructure.

Single defects in monolayer WSe2 have been shown to be a new class of single photon emitters and have potential applications in quantum technologies. Whereas previous work relied on optical excitation of single defects in isolated WSe2 monolayers, in this work we demonstrate electrically driven single defect light emission by using both vertical and lateral van der Waals heterostructure devices. In both device geometries, we use few layer graphene as the source and drain and hexagonal boron nitride as the dielectric spacer layers for engineered tunneling contacts. In addition, the lateral devices utilize a split back gate design to realize an electrostatically defined p-i-n junction. At low current densities and low temperatures (∼5 K), we observe narrow spectral lines in the electroluminescence (EL) whose properties are consistent with optically excited defect bound excitons. We show that the emission originates from spatially localized regions of the sample, and the EL spectrum from single defects has a doublet with the characteristic exchange splitting and linearly polarized selection rules. All are consistent with previously reported single photon-emitters in optical measurements. Our results pave the way for on-chip and electrically driven single photon sources in two-dimensional semiconductors for quantum technology applications.

Simulation of germanium nanobeam electro-optical 2 × 2 switches and 1 × 1 modulators for the 2 to 5 µm infrared region.

This paper proposes and analyzes resonant Si-based electro-optical modulators and switches that use Ge-on-Si3N4 nanobeams (NBs) operating at 2 to 5 µm wavelengths. The wavelength of operation can be extended to 15 µm by mounting the Ge channel waveguides on a bulk Si chip. Electrons and holes are injected into the intrinsic Ge NB cavity center via thin P- and N- doped Ge wings on the NB (a lateral PIN diode at ~0.5 V forward bias). Simulations of the carrier-induced resonance-wavelength shift-and-damping in a 1 × 1 modulator show 6 dB of extinction at ~60 fJ/bit over the mid infrared. The NB's active length is λ-scale. The cavity uses tapered-diameter air holes. Intensity modulation at ~1 Gb/s appears feasible. High-performance 2 × 2 switching is predicted by embedding one NB in each arm of a Mach-Zehnder device. The resonance of each identical NB is shifted by the same Δλ via carrier injection. Calculations show very low insertion loss and crosstalk in both the cross and bar states; however, the cross-to-bar energy, around 8 pJ/bit, is much higher than that in the 2 × 2 version that employs PN-junction carrier depletion.

Wetting and strain engineering of 2D materials on nanopatterned substrates.

The fascinating realm of strain engineering and wetting transitions in two-dimensional (2D) materials takes place when placed on a two-dimensional array of nanopillars or one-dimensional rectangular grated substrates. Our investigation encompasses a diverse set of atomically thin 2D materials, including transition metal dichalcogenides, hexagonal boron nitride, and graphene, with a keen focus on the impact of van der Waals adhesion energies to the substrate on the wetting/dewetting behavior on nanopatterned substrates. We find a critical aspect ratio of the nanopillar or grating heights to the period of the pattern when the wetting/dewetting transition occurs. Furthermore, energy hysteresis analysis reveals dynamic detachment and re-engagement events during height adjustments, shedding light on energy barriers of 2D monolayer transferred on patterned substrates. Our findings offer avenues for strain engineering in 2D materials, leading to promising prospects for future technological applications.

Quantum Interference Enhancement of the Spin-Dependent Thermoelectric Response.

We investigate the influence of quantum interference (QI) and broken spin-symmetry on the thermoelectric response of node-possessing junctions, finding a dramatic enhancement of the spin-thermopower (Ss), figure-of-merit (ZsT), and maximum thermodynamic efficiency (ηsmax) caused by destructive QI. Using many-body and single-particle methods, we calculate the response of 1,3-benzenedithiol and cross-conjugated molecule-based junctions subject to an applied magnetic field, finding nearly universal behavior over a range of junction parameters with Ss, ZsT, and reaching peak values of 2π/3(k/e), 1.51, and 28% of Carnot efficiency, respectively. We also find that the quantum-enhanced spin-response is spectrally broad, and the field required to achieve peak efficiency scales with temperature. The influence of off-resonant thermal channels (e.g., phonon heat transport) on this effect is also investigated.

Plasticizer-Induced Enhancement of Mesoscale Dissymmetry in Thin Films of Chiral Polymers with Variable Chain Length.

Conjugated polymers with chiral side chains are of interest in areas including chiral photonics, optoelectronics, and chemical and biological sensing. However, the low dissymmetry factors of most neat polymer thin films have limited their practical application. Here, a robust method to increase the absorption dissymmetry factor in a poly-fluorene-thiophene (PF8TS series) system is demonstrated by varying molecular weight and introducing an achiral plasticizer, polyethylene mono alcohol (PEM-OH). Extending chain length within the optimal range and adding this long-chain alcohol significantly enhance the chiroptical properties of spin-coated and annealed thin films. Mueller matrix spectroscopic ellipsometry (MMSE) analysis shows good agreement with the steady-state transmission measurements confirming a strong chiral response (circular dichroism (CD) and circular birefringence (CB)), ruling out linear dichroism, birefringence, and specific reflection effects. Solid-state NMR studies of annealed hybrid chiral polymer systems show enhancement of signals associated with aromatic π-stacked backbone and the ordered side-chain conformations. Further studies using Raman spectroscopy, X-ray diffraction (XRD), differential scanning calorimetry (DSC), atomic force microscopy (AFM), and polarized optical microscopy (POM) indicate that PEM-OH facilitates mesoscopic crystal domain ordering upon annealing. This provides new insights into routes for tuning optical activity in conjugated polymers.

Dynamics of self-hybridized exciton-polaritons in 2D halide perovskites.

Excitons, bound electron-hole pairs, in two-dimensional hybrid organic inorganic perovskites (2D HOIPs) are capable of forming hybrid light-matter states known as exciton-polaritons (E-Ps) when the excitonic medium is confined in an optical cavity. In the case of 2D HOIPs, they can self-hybridize into E-Ps at specific thicknesses of the HOIP crystals that form a resonant optical cavity with the excitons. However, the fundamental properties of these self-hybridized E-Ps in 2D HOIPs, including their role in ultrafast energy and/or charge transfer at interfaces, remain unclear. Here, we demonstrate that >0.5 µm thick 2D HOIP crystals on Au substrates are capable of supporting multiple-orders of self-hybridized E-P modes. These E-Ps have high Q factors (>100) and modulate the optical dispersion for the crystal to enhance sub-gap absorption and emission. Through varying excitation energy and ultrafast measurements, we also confirm energy transfer from higher energy E-Ps to lower energy E-Ps. Finally, we also demonstrate that E-Ps are capable of charge transport and transfer at interfaces. Our findings provide new insights into charge and energy transfer in E-Ps opening new opportunities towards their manipulation for polaritonic devices.

Tunable Localized Charge Transfer Excitons in Nanoplatelet-2D Chalcogenide van der Waals Heterostructures.

Observation of interlayer, charge transfer (CT) excitons in van der Waals heterostructures (vdWHs) based on 2D-2D systems has been well investigated. While conceptually interesting, these charge transfer excitons are highly delocalized and spatially localizing them requires twisting layers at very specific angles. This issue of localizing the CT excitons can be overcome via making nanoplate-2D material heterostructures (N2DHs) where one of the components is a spatially quantum confined medium. Here, we demonstrate the formation of CT excitons in a mixed dimensional system comprising MoSe2 and WSe2 monolayers and CdSe/CdS-based core/shell nanoplates (NPLs). Spectral signatures of CT excitons in our N2DHs were resolved locally at the 2D/single-NPL heterointerface using tip-enhanced photoluminescence (TEPL) at room temperature. By varying both the 2D material and the shell thickness of the NPLs and applying an out-of-plane electric field, the exciton resonance energy was tuned by up to 100 meV. Our finding is a significant step toward the realization of highly tunable N2DH-based next-generation photonic devices.

Broadband thermal imaging using meta-optics.

Subwavelength diffractive optics known as meta-optics have demonstrated the potential to significantly miniaturize imaging systems. However, despite impressive demonstrations, most meta-optical imaging systems suffer from strong chromatic aberrations, limiting their utilities. Here, we employ inverse-design to create broadband meta-optics operating in the long-wave infrared (LWIR) regime (8-12 µm). Via a deep-learning assisted multi-scale differentiable framework that links meta-atoms to the phase, we maximize the wavelength-averaged volume under the modulation transfer function (MTF) surface of the meta-optics. Our design framework merges local phase-engineering via meta-atoms and global engineering of the scatterer within a single pipeline. We corroborate our design by fabricating and experimentally characterizing all-silicon LWIR meta-optics. Our engineered meta-optic is complemented by a simple computational backend that dramatically improves the quality of the captured image. We experimentally demonstrate a six-fold improvement of the wavelength-averaged Strehl ratio over the traditional hyperboloid metalens for broadband imaging.

Long-wave infrared tunable thin-film perfect absorber utilizing highly doped silicon-on-sapphire.

We show that nearly perfect absorption can be achieved in a simple structure with highly doped silicon on a sapphire (SOS) substrate. An SOS structure with the n-Si film being 600 nm thick and having doping concentration of 2e19 cm(-3) has an absorption peak of 96% in the film at a wavelength of 12.1 µm. More generally, 95% absorption in the n-Si can be achieved and tailored to specific wavelengths in the range of 11.6-15.1 µm utilizing dopings of 1-2.4e19 cm(-3) and film thicknesses of 600-1000 nm. Regions of 90% absorption can be achievable down to 11 µm and up to as much as 22 µm with tailoring of doping and film thickness. It is also shown that choice of substrate with large k/n (imaginary over real part of refractive index) is imperative for high absorption in the thin-film and will play a role in tailoring possibilities. Shown here are results for n-Si, but in general these results also apply to p-Si and the methods may be used to investigate structures with alternative films or substrates. This investigated SOS structure has high potential since desired film thickness and doping investigated here for perfect absorption can be purchased commercially and easily tuned by etching the silicon film.

Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures.

Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density.

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

Enhancing the Purity of Deterministically Placed Quantum Emitters in Monolayer WSe2.

We present a method utilizing an applied electrostatic potential for suppressing the broad defect bound excitonic emission in two-dimensional materials (2DMs) which otherwise inhibits the purity of strain induced single photon emitters (SPEs). Our heterostructure consists of a WSe2 monolayer on a polymer in which strain has been deterministically introduced via an atomic force microscope (AFM) tip. We show that by applying an electrostatic potential, the broad defect bound background is suppressed at cryogenic temperatures, resulting in a substantial improvement in single photon purity demonstrated by a 10-fold reduction of the correlation function g(2)(0) value from 0.73 to 0.07. In addition, we see a 2-fold increase in the intensity of the SPEs as well as the ability to activate/deactivate the emitters at certain wavelengths. Finally, we present an increase in the operating temperature of the SPE up to 110 K, a 50 K increase when compared with the results when no electrostatic potential is present.