Isotopic analysis of otolith carbonates using laser heating: A fast method for obtaining high-resolution climate signal.

RATIONALE: The stable isotopic compositions of biogenic carbonates like fish otoliths (ear bones) are widely used for palaeoclimatic reconstruction. The conventional method using acid-digestion of micro-milled samples is a multi-step time-consuming process. Here we report a fast method based on laser heating of otolith carbonates to obtain accurate and high-resolution stable isotopic compositions. METHOD: Otoliths of catfish from the Gulf of Kutch were analysed to check the precision, accuracy and time-resolution of the isotope ratios. The CO2 , generated by heating otoliths with a 50 W CO2 laser, was analysed for its oxygen and carbon isotope ratio [δ18 O and δ13 C, with precision: 0.12 and 0.17‰ (1σ), accuracy: 0.13 and 0.25‰, respectively] using a continuous-flow isotope ratio mass spectrometer. The effect of laser power (0.7-2 W) was assessed for reproducible data. Samples were roasted and analysed to account for the effect of the inherent organic matter on the isotopic values. RESULTS: Roasting did not alter the δ18 O of the otoliths but increased the δ13 C slightly. High-resolution (125 µm) analysis of the right and left otolith of a fish yielded similar δ18 O and δ13 C values, suggesting the suitability of either of them for deriving the climate signal. An increase in δ18 O values from ~ -2‰ to ~ -1‰, observed across the ontogeny, is consistent with the known migratory behaviour of the catfish between freshwater and the sea. CONCLUSIONS: The otolith δ18 O value of an adult fish records the sea surface temperature (with ~3°C uncertainty) on a monthly scale. The otolith δ13 C values, with the knowledge of dietary δ13 C, provide the mean annual δ13 C value of dissolved inorganic carbon. The study provides a rapid method for retrieving high-resolution seasonal climate data from otoliths found aplenty in geological/archaeological records.

Antimonide-based membranes synthesis integration and strain engineering.

Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 [Formula: see text]m and lateral sizes from [Formula: see text]m2 to [Formula: see text] cm2 Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to [Formula: see text]3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.

InAsSb-Based Infrared Photodetectors: Thirty Years Later On.

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector's cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

Ultra-thin infrared metamaterial detector for multicolor imaging applications.

The next generation of infrared imaging systems requires control of fundamental electromagnetic processes - absorption, polarization, spectral bandwidth - at the pixel level to acquire desirable information about the environment with low system latency. Metamaterial absorbers have sparked interest in the infrared imaging community for their ability to enhance absorption of incoming radiation with color, polarization and/or phase information. However, most metamaterial-based sensors fail to focus incoming radiation into the active region of a ultra-thin detecting element, thus achieving poor detection metrics. Here our multifunctional metamaterial absorber is directly integrated with a novel mid-wave infrared (MWIR) and long-wave infrared (LWIR) detector with an ultra-thin (~λ/15) InAs/GaSb Type-II superlattice (T2SL) interband cascade detector. The deep sub-wavelength metamaterial detector architecture proposed and demonstrated here, thus significantly improves the detection quantum efficiency (QE) and absorption of incoming radiation in a regime typically dominated by Fabry-Perot etalons. Our work evinces the ability of multifunctional metamaterials to realize efficient wavelength selective detection across the infrared spectrum for enhanced multispectral infrared imaging applications.

CMOS approach to compressed-domain image acquisition.

A hardware implementation of a real-time compressed-domain image acquisition system is demonstrated. The system performs front-end computational imaging, whereby the inner product between an image and an arbitrarily-specified mask is implemented in silicon. The acquisition system is based on an intelligent readout integrated circuit (iROIC) that is capable of providing independent bias voltages to individual detectors, which enables implementation of spatial multiplication with any prescribed mask through a bias-controlled response-modulation mechanism. The modulated pixels are summed up in the image grabber to generate the compressed samples, namely aperture-coded coefficients, of an image. A rigorous bias-selection algorithm is presented to the readout circuit, which exploits the bias-dependent nature of the imager's responsivity. Proven functionality of the hardware in transform coding compressed image acquisition, silicon-level compressive sampling, in pixel nonuniformity correction and hardware-level implementation of region-based enhancement is demonstrated.

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.

Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III-V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored-but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO(2) substrates. As a parallel with silicon-on-insulator (SOI) technology, we use 'XOI' to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO(x) layer (~1 nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6 mS µm(-1) at a drain-source voltage of 0.5 V, with an on/off current ratio of greater than 10,000.

Quantum of optical absorption in two-dimensional semiconductors.

The optical absorption properties of free-standing InAs nanomembranes of thicknesses ranging from 3 nm to 19 nm are investigated by Fourier transform infrared spectroscopy. Stepwise absorption at room temperature is observed, arising from the interband transitions between the subbands of 2D InAs nanomembranes. Interestingly, the absorptance associated with each step is measured to be ∼1.6%, independent of thickness of the membranes. The experimental results are consistent with the theoretically predicted absorptance quantum, AQ = πα/nc for each set of interband transitions in a 2D semiconductor, where α is the fine structure constant and nc is an optical local field correction factor. Absorptance quantization appears to be universal in 2D systems including III-V quantum wells and graphene.

Two-photon photovoltaic effect in gallium arsenide.

The two-photon photovoltaic effect is demonstrated in gallium arsenide at 976 and 1550 nm wavelengths. A waveguide-photodiode biased in its fourth quadrant harvests electrical power from the optical energy lost to two-photon absorption. The experimental results are in good agreement with simulations based on nonlinear wave propagation in waveguides and the drift-diffusion model of carrier transport in semiconductors. Power efficiency of up to 8% is theoretically predicted in optimized devices.

Order-of-magnitude enhancement of intersubband photoresponse in a plasmonic quantum dot system.

The unprecedented ability of metallic subwavelength structures to confine and concentrate light into subwavelength spaces has led to new physics and exploration of novel devices. In this Letter, we demonstrate a 20 times enhancement of intersubband photoresponse in a InAs quantum dot (QD) system due to evanescently coupled plasmonic field. The resulting enhancement is accompanied by significant narrowing of photoresponse linewidth. The strong enhancement is attributed to efficient coupling of incident field to surface modes and to QDs, the presence of polarization-dependent absorption from QDs, and a fairly strong plasmon-QD interaction.

Large aperture adaptive doublet polymer lens for imaging applications.

We report a full design process-finite element modeling, fabrication, and characterization-of adaptive doublet polymer lenses. A first-order model was developed and used to design fluidic doublets, analogous to their glass counterparts. Two constant-volume fluidic chambers were enclosed by three flexible membranes, resulting in a variable focal length doublet with a clear aperture of 19.0 mm. Chromatic focal shift was then used to compare numerical modeling to experimentally measured results over a positive focal length range of 55-200 mm (f/2.89 to f/10.5).

Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection.

The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such as imaging and optical communications. Here, a series of digital alloy (DA)-grown InAs/GaAs short-period superlattices were investigated to extend the absorption spectral range. The scanning transmission electron microscopy, high-resolution X-ray diffraction, and atomic force microscopy measurements exhibit good material quality, while the photoluminescence (PL) spectra demonstrate a wide band gap tunability for the InGaAs obtained via the DA growth technique. The photoluminescence peak can be effectively shifted from 1690 nm (0.734 eV) for conventional random alloy (RA) InGaAs to 1950 nm (0.636 eV) for 8 monolayer (ML) DA InGaAs at room temperature. The complete set of optical constants of DA InGaAs has been extracted via the ellipsometry technique, showing the absorption coefficients of 398, 831, and 1230 cm-1 at 2 µm for 6, 8, and 10 ML DA InGaAs, respectively. As the period thickness increases for DA InGaAs, a red shift at the absorption edge can be observed. Furthermore, the simulated band structures of DA InGaAs via an environment-dependent tight binding model agree well with the measured photoluminescence peaks, which is advantageous for a physical understanding of band structure engineering via the DA growth technique. These investigations and results pave the way for the future utilization of the DA-grown InAs/GaAs short-period superlattices as a promising absorption material choice to extend the photodetector response beyond the cutoff wavelength of random alloy InGaAs.

Analysis of subwavelength metal hole array structure for the enhancement of back-illuminated quantum dot infrared photodetectors.

This paper is focused on analyzing the impact of a two-dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2D-Au-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show that the performance of the DWELL focal plane array (FPA) is improved by enhancing the coupling to active layer via local field engineering resulting from a surface plasmon polariton mode and a guided Fabry-Perot mode. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors. Experimental results demonstrate the enhanced signal-to-noise ratio by the 2D-Au-CHA integrated FPA as compared to the DWELL FPA. A comparison between the experiment and the simulation shows a good agreement.

Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates.

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f(t)) of ∼165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of ∼105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates.

III-V complementary metal-oxide-semiconductor electronics on silicon substrates.

One of the major challenges in further advancement of III-V electronics is to integrate high mobility complementary transistors on the same substrate. The difficulty is due to the large lattice mismatch of the optimal p- and n-type III-V semiconductors. In this work, we employ a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound semiconductors on Si/SiO(2) substrates. In this III-V-on-insulator (XOI) concept, ultrathin-body InAs (thickness, 13 nm) and InGaSb (thickness, 7 nm) layers are used for enhancement-mode n- and p- MOSFETs, respectively. The peak effective mobilities of the complementary devices are ∼1190 and ∼370 cm(2)/(V s) for electrons and holes, respectively, both of which are higher than the state-of-the-art Si MOSFETs. We demonstrate the first proof-of-concept III-V CMOS logic operation by fabricating NOT and NAND gates, highlighting the utility of the XOI platform.

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics.

Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.

Al0.85Ga0.15As0.56Sb0.44 has recently attracted significant research interest as a material for 1550 nm low-noise short-wave infrared (SWIR) avalanche photodiodes (APDs) due to the very wide ratio between its electron and hole ionization coefficients. This work reports new experimental excess noise data for thick Al0.85Ga0.15As0.56Sb0.44 PIN and NIP structures, measuring low noise at significantly higher multiplication values than previously reported (F = 2.2 at M = 38). These results disagree with the classical McIntyre excess noise theory, which overestimates the expected noise based on the ionization coefficients reported for this alloy. Even the addition of 'dead space' effects cannot account for these discrepancies. The only way to explain the low excess noise observed is to conclude that the spatial probability distributions for impact ionization of electrons and holes in this material follows a Weibull-Fréchet distribution function even at relatively low electric-fields. Knowledge of the ionization coefficients alone is no longer sufficient to predict the excess noise properties of this material system and consequently the electric-field dependent electron and hole ionization probability distributions are extracted for this alloy.

Continuous time-varying biasing approach for spectrally tunable infrared detectors.

In a recently demonstrated algorithmic spectral-tuning technique by Jang et al. [Opt. Express 19, 19454-19472, (2011)], the reconstruction of an object's emissivity at an arbitrarily specified spectral window of interest in the long-wave infrared region was achieved. The technique relied upon forming a weighted superposition of a series of photocurrents from a quantum dots-in-a-well (DWELL) photodetector operated at discrete static biases that were applied serially. Here, the technique is generalized such that a continuously varying biasing voltage is employed over an extended acquisition time, in place using a series of fixed biases over each sub-acquisition time, which totally eliminates the need for the post-processing step comprising the weighted superposition of the discrete photocurrents. To enable this capability, an algorithm is developed for designing the time-varying bias for an arbitrary spectral-sensing window of interest. Since continuous-time biasing can be implemented within the readout circuit of a focal-plane array, this generalization would pave the way for the implementation of the algorithmic spectral tuning in focal-plane arrays within in each frame time without the need for on-sensor multiplications and additions. The technique is validated by means of simulations in the context of spectrometry and object classification while using experimental data for the DWELL under realistic signal-to-noise ratios.

Quantum confinement effects in nanoscale-thickness InAs membranes.

Nanoscale size effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field and thickness dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance toward establishing the fundamental device physics of two-dimensional semiconductors.

Data compressive paradigm for multispectral sensing using tunable DWELL mid-infrared detectors.

While quantum dots-in-a-well (DWELL) infrared photodetectors have the feature that their spectral responses can be shifted continuously by varying the applied bias, the width of the spectral response at any applied bias is not sufficiently narrow for use in multispectral sensing without the aid of spectral filters. To achieve higher spectral resolutions without using physical spectral filters, algorithms have been developed for post-processing the DWELL's bias-dependent photocurrents resulting from probing an object of interest repeatedly over a wide range of applied biases. At the heart of these algorithms is the ability to approximate an arbitrary spectral filter, which we desire the DWELL-algorithm combination to mimic, by forming a weighted superposition of the DWELL's non-orthogonal spectral responses over a range of applied biases. However, these algorithms assume availability of abundant DWELL data over a large number of applied biases (>30), leading to large overall acquisition times in proportion with the number of biases. This paper reports a new multispectral sensing algorithm to substantially compress the number of necessary bias values subject to a prescribed performance level across multiple sensing applications. The algorithm identifies a minimal set of biases to be used in sensing only the relevant spectral information for remote-sensing applications of interest. Experimental results on target spectrometry and classification demonstrate a reduction in the number of required biases by a factor of 7 (e.g., from 30 to 4). The tradeoff between performance and bias compression is thoroughly investigated.

A surface plasmon enhanced infrared photodetector based on InAs quantum dots.

In this paper, we report a successful realization and integration of a gold two-dimensional hole array (2DHA) structure with semiconductor InAs quantum dot (QD). We show experimentally that a properly designed 2DHA-QD photodetector can facilitate a strong plasmonic-QD interaction, leading to a 130% absolute enhancement of infrared photoresponse at the plasmonic resonance. Our study indicates two key mechanisms for the performance improvement. One is an optimized 2DHA design that permits an efficient coupling of light from the far-field to a localized plasmonic mode. The other is the close spatial matching of the QD layers to the wave function extent of the plasmonic mode. Furthermore, the processing of our 2DHA is amenable to large scale fabrication and, more importantly, does not degrade the noise current characteristics of the photodetector. We believe that this demonstration would bring the performance of QD-based infrared detectors to a level suitable for emerging surveillance and medical diagnostic applications.