Sn and Ge Complexes with Redox-Active Ligands as Efficient Interfacial Membrane-like Buffer Layers for p-i-n Perovskite Solar Cells.

Inverted perovskite solar cells with a p-i-n configuration have attracted considerable attention from the research community because of their simple design, insignificant hysteresis, improved operational stability, and low-temperature fabrication technology. However, this type of device is still lagging behind the classical n-i-p perovskite solar cells in terms of its power conversion efficiency. The performance of p-i-n perovskite solar cells can be increased using appropriate charge transport and buffer interlayers inserted between the main electron transport layer and top metal electrode. In this study, we addressed this challenge by designing a series of tin and germanium coordination complexes with redox-active ligands as promising interlayers for perovskite solar cells. The obtained compounds were characterized by X-ray single-crystal diffraction and/or NMR spectroscopy, and their optical and electrochemical properties were thoroughly studied. The efficiency of perovskite solar cells was improved from a reference value of 16.4% to 18.0-18.6%, using optimized interlayers of the tin complexes with salicylimine (1) or 2,3-dihydroxynaphthalene (2) ligands, and the germanium complex with the 2,3-dihydroxyphenazine ligand (4). The IR s-SNOM mapping revealed that the best-performing interlayers form uniform and pinhole-free coatings atop the PC61BM electron-transport layer, which improves the charge extraction to the top metal electrode. The obtained results feature the potential of using tin and germanium complexes as prospective materials for improving the performance of perovskite solar cells.

Unusual isotope effect in the reaction of chlorosilylene with trimethylsilane-1-d. Absolute rate studies and quantum chemical and Rice-Ramsperger-Kassel-Marcus calculations provide strong evidence for the involvement of an intermediate complex.

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane-1-d, Me(3)SiD, in the gas phase. The reaction was studied at total pressures up to 100 Torr (with and without added SF(6)) over the temperature range of 295-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log[(k/(cm(3) molecule(-1) s(-1))] = (-13.22 ± 0.15) + [(13.20 ± 1.00) kJ mol(-1)]/(RT ln 10). When compared with previously published kinetic data for the reaction of ClSiH with Me(3)SiH, kinetic isotope effects, k(D)/k(H), in the range from 7.4 (297 K) to 6.4 (407 K) were obtained. These far exceed values of 0.4-0.5 estimated for a single-step insertion process. Quantum chemical calculations (G3MP2B3 level) confirm not only the involvement of an intermediate complex, but also the existence of a low-energy internal isomerization pathway which can scramble the D and H atom labels. By means of Rice-Ramsperger-Kassel-Marcus modeling and a necessary (but small) refinement of the energy surface, we have shown that this mechanism can reproduce closely the experimental isotope effects. These findings provide the first experimental evidence for the isomerization pathway and thereby offer the most concrete evidence to date for the existence of intermediate complexes in the insertion reactions of silylenes.

Therapeutic Effect of Novel Cyanopyrrolidine-Based Prolyl Oligopeptidase Inhibitors in Rat Models of Amnesia.

Prolyl oligopeptidase (POP) is a large cytosolic serine peptidase that is altered in patients with Alzheimer's disease, Parkinsonian syndrome, muscular dystrophies, and other denervating diseases. Thus, POP may represent a relevant therapeutic target for treatment of neuropsychiatric disorders and neurodegenerative diseases. Here, we report the characterization of five novel cyanopyrrolidine-based compounds (BocTrpPrdN, BocGlyPrdN, CbzMetPrdN, CbzGlnPrdN, and CbzAlaPrdN) and show that they are potent inhibitors of POP and are predicted to penetrate the blood-brain barrier (BBB). Indeed, we show that CbzMetPrdN penetrates the rat BBB and effectively inhibits POP in the brain when administered intraperitoneally. Furthermore, molecular modeling confirmed these compounds likely inhibit POP via interaction with the POP catalytic site. We evaluated protective effects of the cyanopyrrolidine-based POP inhibitors using scopolamine- and maximal electroshock-induced models of amnesia in rats and showed that BocTrpPrdN, BocGlyPrdN, CbzMetPrdN, and CbzGlnPrdN significantly prolonged conditioned passive avoidance reflex (CPAR) retention time when administered intraperitoneally (1 and 2 mg/kg) before evaluation in both models of amnesia, although CbzAlaPrdN was not effective in scopolamine-induced amnesia. Our data support previous reports on the antiamnesic effects of prolinal-based POP inhibitors and indicate an important role of POP in the regulation of learning and memory processes in the CNS.

Supramolecular D⋯A-layered structures based on germanium complexes with 2,3-dihydroxynaphthalene and N,N'-bidentate ligands.

The concept of using redox-active ligands, which has become extremely widespread in organometallic chemistry, is often considered from 'their effect on the metal center properties' point of view and 'how to modify the ligands'. In this paper, we present the reverse side of this effective approach - a dramatic change of redox properties of ligands under the influence of a redox-inert metal. Germanium derivatives based on 2,3-dihydroxynaphthalene (1) and N,N'-bidentate ligands, namely 2,2'-bipyridine (2) and 1,10-phenanthroline (3), were obtained and characterized by CV, UV-vis spectroscopy, DFT calculations and in the case of 3 X-ray diffraction. It was shown that the HOMO of the complexes is almost completely located on the naphthalene fragment while the LUMO is on the N,N-ligands. At the same time, there are no boundary molecular orbitals on the germanium atom, but it forms the axial part of the molecule holding two opposite motifs together. Moreover, it sharply affects the level of HOMO and LUMO. Derivatives 2 and 3 are more easily oxidized compared to 2,3-dihydroxynaphthalene by 0.31-0.34 V (7-8 kcal mol-1) and are more easily reduced compared to N,N-donors by 1.08-1.15 V (25-26.5 kcal mol-1). All this together makes it possible to form a system with a narrow HOMO/LUMO gap (∼2 eV). The crystal structure of 3 consists of alternating monomolecular easily oxidizing and easily reducing layers formed due to intermolecular interactions, in particular π-stacking. In addition, in contrast to 1 that starts to decompose noticeably at the temperatures from 200 °C, 2 and 3 have an extremely high thermal stability. They remain stable with no signs of decomposition and melting up to 400 °Ð¡. We believe that this approach to the formation of the supramolecular structure may present prospects for obtaining new functional materials.

Gas-phase kinetics of chlorosilylene reactions II. ClSiH + C2H4: absolute rate measurements and quantum chemical and RRKM calculations for the prototype pi addition reaction.

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, are carried out to obtain rate constants for its bimolecular reaction with ethene, C(2)H(4), in the gas-phase. The reaction is studied over the pressure range 0.13-13.3 kPa (with added SF(6)) at five temperatures in the range 296-562 K. The second order rate constants, obtained by extrapolation to the high pressure limits at each temperature, fitted the Arrhenius equation: log(k(infinity)/cm(3) molecule(-1) s(-1)) = (-10.55+/-0.10) + (3.86 +/- 0.70) kJ mol(-1)/RT ln10. The Arrhenius parameters correspond to a loose transition state and the rate constant at room temperature is 43% of that for SiH(2) + C(2)H(4), showing that the deactivating effect of Cl-for-H substitution in the silylene is not large. Quantum chemical calculations of the potential energy surface for this reaction at the G3MP2//B3LYP level show that, as well as 1-chlorosilirane, ethylchlorosilylene is a viable product. The calculations reveal how the added effect of the Cl atom on the divalent state stabilisation of ClSiH influences the course of this reaction. RRKM calculations of the reaction pressure dependence suggest that ethylchlorosilylene should be the main product. The results are compared and contrasted with those of SiH(2) and SiCl(2) with C(2)H(4).

Gas-phase kinetics of chlorosilylene reactions. I. ClSiH + Me3SiH: absolute rate measurements and theoretical calculations for prototype Si-H insertion reactions.

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane, Me(3)SiH, in the gas phase. The reaction was studied at total pressures up to 100 torr (with and without added SF(6)) over the temperature range 297-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log(k/cm(3) molecule(-1) s(-1)) = (-13.97 +/- 0.25) + (12.57 +/- 1.64) kJ mol(-1)/RT ln 10. The Arrhenius parameters are consistent with a mechanism involving an intermediate complex, whose rearrangement is the rate-determining step. Quantum chemical calculations of the potential energy surface for this reaction and also the reactions of ClSiH with SiH(4) and the other methylsilanes support this conclusion. Comparisons of both experiment and theory with the analogous Si-H insertion processes of SiH(2) and SiMe(2) show that the main factor causing the lower reactivity of ClSiH is the secondary energy barrier. The calculations also show the existence of a novel intramolecular H-atom exchange process in the complex of ClSiH with MeSiH(3).

Surprisingly slow reaction of dimethylsilylene with dimethylgermane: time-resolved kinetic studies and related quantum chemical calculations.

Time-resolved studies of silylene, SiH2, and dimethylsilylene, SiMe2, generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to obtain rate constants for their bimolecular reactions with dimethylgermane, Me2GeH2, in the gas phase. SiMe2 + Me2GeH2 was studied at five temperatures in the range 299-555 K. Problems of substrate UV absorption at 193 nm at temperatures above 400 K meant that only three temperatures could be used reliably for rate constant measurement. These rate constants gave the Arrhenius parameters log(A/cm3 molecule(-1) s(-1)) = -13.25 +/- 0.16 and E(a) = -(5.01 +/- 1.01) kJ mol(-1). Only room temperature studies of SiH2 were carried out. These gave values of (4.05 +/- 0.06) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + Me2GeH2 at 295 K) and also (4.41 +/- 0.07) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + MeGeH3 at 296 K). Rate constant comparisons show the surprising result that SiMe2 reacts 12.5 times slower with Me2GeH2 than with Me2SiH2. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) of the model Si-H and Ge-H insertion processes of SiMe2 with SiH4/MeSiH3 and GeH4/MeGeH3 support these findings and show that the lower reactivity of SiMe2 with Ge-H bonds is caused by a higher secondary barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper. Other, related, comparisons of silylene reactivity are also presented.

Direct time-resolved study of the gas-phase reactions of germylene with ethyl- and diethylgermane: absolute rate constants, temperature dependences, and mechanism.

Time-resolved studies of germylene, GeH2, generated by the 193 nm laser flash photolysis of 3,4-dimethyl-1-germacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reactions with ethyl- and diethylgermanes in the gas phase. The reactions were studied over the pressure range 1-100 Torr with SF6 as bath gas and at five temperatures in the range 297-564 K. Only slight pressure dependences were found for GeH2 + EtGeH3 (399, 486, and 564 K). The high pressure rate constants gave the following Arrhenius parameters: for GeH2 + EtGeH3, log A = -10.75 +/- 0.08 and Ea = -6.7 +/- 0.6 kJ mol-1; for GeH2 + Et2GeH2, log A = -10.68 +/- 0.11 and Ea = -6.95 +/- 0.80 kJ mol-1. These are consistent with fast, near collision-controlled, association processes at 298 K. RRKM modeling calculations are, for the most part, consistent with the observed pressure dependence of GeH2 + EtGeH3. The ethyl substituent effects have been extracted from these results and are much larger than the analogous methyl substituent effects in the SiH2 + methylsilane reaction series. This is consistent with a mechanistic model for Ge-H insertion in which the intermediate complex has a sizable secondary barrier to rearrangement.

A comparison of the reactivity of germylene and dimethylgermylene with some methylgermanes. Direct kinetic and quantum chemical studies.

Time-resolved studies of germylene, GeH(2), and dimethygermylene, GeMe(2), generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to try to obtain rate coefficients for their bimolecular reactions with dimethylgermane, Me(2)GeH(2), in the gas-phase. GeH(2) + Me(2)GeH(2) was studied over the pressure range 1-100 Torr with SF(6) as bath gas and at five temperatures in the range 296-553 K. Only slight pressure dependences were found (at 386, 447 and 553 K). RRKM modelling was carried out to fit these pressure dependences. The high pressure rate coefficients gave the Arrhenius parameters: log(A/cm(3) molecule(-1) s(-1)) = -10.99 +/- 0.07 and E(a) =-(7.35 +/- 0.48) kJ mol(-1). No reaction could be found between GeMe(2) + Me(2)GeH(2) at any temperature up to 549 K, and upper limits of ca. 10(-14) cm(3) molecule(-1) s(-1) were set for the rate coefficients. A rate coefficient of (1.33 +/- 0.04) x 10(-10) cm(3) molecule(-1) s(-1) was also obtained for GeH(2) + MeGeH(3) at 296 K. No reaction was found between GeMe(2) and MeGeH(3). Rate coefficient comparisons showed, inter alia, that in the substrate germane Me-for-H substitution increased the magnitudes of rate coefficients significantly, while in the germylene Me-for-H substitution decreased the magnitudes of rate coefficients by at least four orders of magnitude. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) supported these findings and showed that the lack of reactivity of GeMe(2) is caused by a positive energy barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper.

First gas-phase detection of dimethylstannylene and time-resolved study of some of its reactions.

Using a laser flash photolysis/laser probe technique, we report the observation of strong absorption signals in the wavelength region 450-520 nm (highest intensity at 514.5 nm) from four potential precursors of dimethylstannylene, SnMe(2), subjected to 193 nm UV pulses. From GC analyses of the gaseous products, combined with quantum chemical excited state CIS and TD calculations, we can attribute these absorptions largely to SnMe(2), with SnMe(4) as the cleanest source of the species. Kinetic studies have been carried out by time-resolved monitoring of SnMe(2). Rate constants have been measured for its reactions with 1,3-C(4)H(6), MeC[triple bond]CMe, MeOH, 1-C(4)H(9)Br, HCl, and SO(2). No evidence could be found for reaction of SnMe(2) with C(2)H(4), C(3)H(8), Me(3)SiH, GeH(4), Me(2)GeH(2), or N(2)O. Limits of less than 10(-13) cm(3) molecule(-1) s(-1) were set for the rate constants for these latter reactions. These measurements showed that SnMe(2) does not insert readily into C-H, Si-H, Ge-H, C-C, Si-C, or Ge-C bonds. It is also unreactive with alkenes although not with dienes or alkynes. It is selectively reactive with lone pair donor molecules. The possible mechanisms of these reactions are discussed. These results represent the first visible absorption spectrum and rate constants for any organo-stannylene in the gas phase.