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We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1-1.55 µm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.
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Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting, and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 µm in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (VSi) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding VSi qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.
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We respond to the comment by Thomas Walther and reaffirm the findings of our original article.
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Using monochromated electron energy loss spectroscopy in a probe-corrected scanning transmission electron microscope we demonstrate band gap mapping in ZnO/ZnCdO thin films with a spatial resolution below 10 nm and spectral precision of 20 meV.
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Surface-enhanced Raman scattering is a practical, noninvasive spectroscopic technique that measures chemical fingerprints for varieties of molecules in multiple applications. However, synthesizing appropriate substrates for practical, long-term applications of this method has always been a challenging task. In the present study, we show that ZnO/Ag nanohybrid substrates may act as highly stable, sensitive, and recyclable substrates for surface-enhanced Raman scattering, as illustrated by the detection of methylene blue, selected as a test dye molecule with self-cleaning functionalities. Specifically, we demonstrate the detection enhancement factor of 3.7 × 107 along with exceptional long-term stability explained in terms of the localized surface plasmon resonance from the Ag nanocrystals embedded into the chemically inert ZnO nanoparticles, constituting the nanohybrid. Significantly, these substrates can be efficiently cleaned and regenerated while maintaining their high performance upon recycling. As a result, using these substrates, up to 10-12 M detection sensitivity has been demonstrated, enabling the accuracy required in modern environmental monitoring, bioassays, and analytical chemistry. Thus, ZnO nanoparticles with embedded Ag nanocrystals constitute a novel class of advanced nanohybrid substrates for use in multiple applications of surface-enhanced Raman scattering metrology.
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Sublattice localization of impurities in compound semiconductors, e.g., ZnO, determines their electronic and optical action. Despite that the impurity position may be envisaged based on charge considerations, the actual localization is often unknown, limiting our understanding of the incorporation and possible doping mechanisms. In this study, we demonstrate that the preferential sublattice occupation for a number of impurities in ZnO can be revealed by monitoring Li diffusion. In particular, using ion implantation, the impurity incorporation into the Zn sublattice (holds for, B, Mg, P, Ag, Cd, and Sb) manifests in the formation of Li-depleted regions behind the implanted one, while Li pileups in the region of the implantation peaks for impurities residing on O sites, e.g., N. The behavior appears to be of general validity and the phenomena are explained in terms of the apparent surplus of Zn and O interstitials, related to the lattice localization of the impurities. Furthermore, Cd+O and Mg+O co-doping experiments revealed that implanted O atoms act as an efficient blocking "filter" for fast diffusing Zn interstitials.