Stainless-Steel Antenna on Conductive Substrate for an SHM Sensor System with High Power Demand.

This paper presents the novel concept of structuring a planar coil antenna structured into the outermost stainless-steel layer of a fiber metal laminate (FML) and investigating its performance. Furthermore, the antenna is modified to sufficiently work on inhomogeneous conductive substrates such as carbon-fiber-reinforced polymers (CFRP) independent from their application-dependent layer configuration, since the influence on antenna performance was expected to be configuration-dependent. The effects of different stack-ups on antenna characteristics and strategies to cope with these influences are investigated. The purpose was to create a wireless self-sustained sensor node for an embedded structural health monitoring (SHM) system inside the monitored material itself. The requirements of such a system are investigated, and measurements on the amount of wireless power that can be harvested are conducted. Mechanical investigations are performed to identify the antenna shape that produces the least wound to the material, and electrical investigations are executed to prove the on-conductor optimization concept. Furthermore, a suitable process to fabricate such antennas is introduced. First measurements fulfilled the expectations: the measured antenna structure prototype could provide up to 11 mW to a sensor node inside the FML component.

Flexo-Ionic Effect of Ionic Liquid Crystal Elastomers.

The first study of the flexo-ionic effect, i.e., mechanical deformation-induced electric signal, of the recently discovered ionic liquid crystal elastomers (iLCEs) is reported. The measured flexo-ionic coefficients were found to strongly depend on the director alignment of the iLCE films and can be over 200 µC/m. This value is orders of magnitude higher than the flexo-electric coefficient found in insulating liquid crystals and is comparable to the well-developed ionic polymers (iEAPs). The shortest response times, i.e., the largest bandwidth of the flexo-ionic responses, is achieved in planar alignment, when the director is uniformly parallel to the substrates. These results render high potential for iLCE-based devices for applications in sensors and wearable micropower generators.

Poly(ethylene glycol) Diacrylate Based Electro-Active Ionic Elastomer.

Preparation and low voltage induced bending (converse flexoelectricity) of crosslinked poly(ethylene glycol) diacrylate (PEGDA), modified with thiosiloxane (TS) and ionic liquid (1-hexyl-3-methylimidazolium hexafluorophosphate) (IL) are reported. In between 2µm PEDOT:PSS electrodes at 1 V, it provides durable (95% retention under 5000 cycles) and relatively fast (2 s switching time) actuation with the second largest strain observed so far in ionic electro-active polymers (iEAPs). In between 40 nm gold electrodes under 8 V DC voltage, the film can be completely curled up (270° bending angle) with 6% strain that, to the best of the knowledge, is unpreceded among iEAPs. These results render great potential for the TS/PEGDA/IL based electro-active actuators for soft robotic applications.

Electroresponsive Ionic Liquid Crystal Elastomers.

This paper describes the preparation, physical properties, and electric bending actuation of a new class of active materials-ionic liquid crystal elastomers (iLCEs). It is demonstrated that iLCEs can be actuated by low-frequency AC or DC voltages of less than 1 V. The bending strains of the unoptimized first iLCEs are already comparable to the well-developed ionic electroactive polymers. Additionally, iLCEs exhibit several novel and superior features, such as the alignment that increases the performance of actuation, the possibility of preprogrammed actuation patterns at the level of the cross-linking process, and dual (thermal and electric) actuations in hybrid samples. Since liquid crystal elastomers are also sensitive to magnetic fields and can also be light sensitive, iLCEs have far-reaching potentials toward multiresponsive actuations that may have so far unmatched properties in soft robotics, sensing, and biomedical applications.

Doped bottom-contact organic field-effect transistors.

The influence of doping on doped bottom-gate bottom-contact organic field-effect transistors (OFETs) is discussed. It is shown that the inclusion of a doped layer at the dielectric/organic semiconductor layer leads to a significant reduction in the contact resistances and a fine control of the threshold voltage. Through varying the thickness of the doped layer, a linear shift of threshold voltage V T from -3.1 to -0.22 V is observed for increasing thickness of doped layer. Meanwhile, the contact resistance at the source and drain electrode is reduced from 138.8 MΩ at V GS = -10 V for 3 nm to 0.3 MΩ for 7 nm thick doped layers. Furthermore, an increase of charge mobility is observed for increasing thickness of doped layer. Overall, it is shown that doping can minimize injection barriers in bottom-contact OFETs with channel lengths in the micro-meter regime, which has the potential to increase the performance of this technology further.

Doped Organic Transistors.

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

White organic light-emitting diodes with fluorescent tube efficiency.

The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.

Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode.

In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile are shown to agree well with experiment. The experimental emission profile was obtained with nanometre resolution from the measured angle- and polarization-dependent emission spectra. The simulations elucidate the crucial role of exciton transfer from green to red and the efficiency loss due to excitons generated in the interlayer between the green and blue layers. The perpendicular and lateral confinement of the exciton generation to regions of molecular-scale dimensions revealed by this study demonstrate the necessity of molecular-scale instead of conventional continuum simulation.

High-performance vertical organic transistors.

Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors.

Enhanced and balanced efficiency of white bi-directional organic light-emitting diodes.

We report on the characteristics of enhanced and balanced white-light emission from bi-directional organic light-emitting diodes (BiOLEDs) enabled by the introduction of micro-cavity effects. The insertion of an additional metal layer between the indium tin oxide anode and the hole transporting layer results in similar light output of our BiOLEDs in both top and bottom direction and in reduced distortion of the electroluminescence spectrum. Furthermore, we find that by utilizing MC effects, the overall current efficiency can be improved by 26.2% compared to that of a conventional device.

Highly efficient white top-emitting organic light-emitting diodes comprising laminated microlens films.

White top-emitting organic light-emitting diodes (OLEDs) attract much attention, as they are optically independent from the substrate used. While monochrome top-emitting OLEDs can be designed easily to have high-emission efficiency, white light emission faces obstacles. The commonly used thin metal layers as top electrodes turn the device into a microresonator having detrimental narrow and angular dependent emission characteristics. Here we report on a novel concept to improve the color quality and efficiency of white top-emitting OLEDs. We laminate a refractive index-matched microlens film on the top-emitting device. The microlens film acts both as outcoupling-enhancing film and an integrating element, mixing the optical modes to a broadband spectrum.

Combined effects of microcavity and dielectric capping layer on bidirectional organic light-emitting diodes.

We report on highly enhanced and controlled light outcoupling of bidirectional organic light-emitting diodes by introduction of an enhanced microcavity structure as well as an organic capping layer (OC). Combining both OC and microcavity, we find that the overall external quantum, as well as current efficiency (CE), can be greatly enhanced. Especially, the CE with an appropriate thickness of OC is almost 1.75 times larger than that of the reference device without OC. Furthermore, we also analyze our devices with a numerical optical model calculating the flux of outcoupled photons, and compare theoretical predictions with our experimental results.

Influence of Injection Barrier on Vertical Organic Field Effect Transistors.

Organic field-effect transistors (OFETs) have shown great potential for applications that require low temperature deposition on large and flexible substrates. To increase their performance, in particular a high transconductance and transit frequency, the transistor channel length has to be scaled into the submicrometer regime, which can be easily achieved in vertical organic field effect transistors (VOFETs). However, despite high performance observed in VOFETs, these transistors usually suffer from short channel effects like weak saturation of the drain current and direct source-drain leakage resulting in large off currents. Here, we study the influence of the injection barrier at the source electrode on the OFF currents, on/off ratio, and transconductance of vertical OFETs. We use two semiconducting materials, 2,6-diphenyl anthracene (DPA), and C60 to vary the injection barrier at the source electrode and are able to show that increasing the Schottky barrier at the source electrode can decrease the direct source/drain leakage by 3 orders of magnitude. However, the increased injection barrier at the source electrode comes at the expense of an increased contact resistance, which in turn will decrease its transconductance and transit frequency. With the help of a 2D drift-diffusion simulation we show that the trade-off between low off currents and high transconductance is inherent to the current VOFET device setup and that new approaches have to be found to design VOFETs that combine good switching properties with high performance.

Top-emitting organic light-emitting diodes.

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Increased and balanced light emission of transparent organic light-emitting diodes by enhanced microcavity effects.

We report on improved and controlled light outcoupling of transparent organic light-emitting diodes (TOLEDs) by inserting thin silver layers between the indium tin oxide anode and the hole transporting layer. The introduction of Ag layers influences both the bottom and top emission of the TOLEDs, and it results in dramatic changes in the electroluminescence spectra and angular distribution. We find that the overall external quantum efficiency can be increased up to 18.8%, and the ratio of bottom and top emission can be almost identical.

Influence of organic capping layers on the performance of transparent organic light-emitting diodes.

We investigate a set of transparent organic LEDs (TOLEDs) with different organic capping layer (OC) thicknesses to understand the capping layer effect. We find that thickness variation of the OC strongly influences the emission properties of TOLEDs and exhibits different trends for top or bottom emission. The external quantum efficiency for the top side can be enhanced by a factor of 63%, but that of the bottom side only by 4% compared to a reference device without an OC. Additionally, we demonstrate that the introduction of the OC is an effective method to control the bottom-to-top emission ratio within a measured range from 2.87 to 6.05.

Organic Zener diodes: tunneling across the gap in organic semiconductor materials.

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital-lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

Analytic Device Model of Organic Field-Effect Transistors with Doped Channels.

Doping has been shown to not only provide additional degrees of freedom in the design of organic field-effect transistors (OFETs) but to increase their performance and stability as well. An analytical model based on the assumption of a square doping profile inside the channel is presented here that describes the effect of doping on the transfer characteristic of OFETs. The model is validated experimentally by a series of OFETs with varying doping conditions. The precise doping profile in the transistor channel is determined by fitting the capacitance/voltage response of doped metal-insulator-semiconductor (MIS) junctions using an AC small-signal drift-diffusion simulation. It is shown that the real doping profile deviates from the simplifying assumptions of the analytical model, i.e., it is found that the effective doping concentration at the dielectric/semiconductor interface is reduced. However, it is shown that the analytical model is not sensitive to this deviation as only the total density charges per unit area determine the changes in the transistor behavior. Overall, the presented theory provides new design rules that can be used to guide the development of doped OFETs with high performance.