The development and validation of the Emotional Cultivation Scale: An East Asian cultural perspective.

Research on emotion regulation in East Asian children and adolescents is limited. One obstacle hindering the development of emotion regulation for East Asian children and adolescents is the lack of a culturally sensitive measure. To fill this gap, we have developed and validated the Emotional Cultivation Scale using samples of Taiwanese children and adolescents. In Study 1, an exploratory factor analysis (n = 341) identified two factors: Cultivating Emotion Strategies and Understanding Emotion Connotations. A confirmatory factor analysis (n = 358) confirmed this two-factor structure. Coefficient αs were .69 to .88 for Emotional Cultivation. Convergent validity was evidenced by positive associations with cognitive reappraisal and cognitive flexibility. Discriminant validity was supported by a nonsignificant association with suppression. Concurrent validity was revealed by positive associations with positive affect, basic psychological need satisfaction, gratitude, responsiveness from teachers, responsiveness from parents, and academic self-efficacy. Incremental validity was evidenced by the finding that emotional cultivation significantly accounted for an additional 2 to 20% of the variance in predicting cognitive flexibility, positive affect, basic psychological need satisfaction, gratitude, responsiveness from teachers, responsiveness from parents, and academic self-efficacy above and beyond cognitive reappraisal and suppression. Results from the multigroup analysis further indicated factor loading invariance and validity invariance between boys and girls and between elementary and middle schools. The factor structure was cross-validated by a clinical sample of Taiwanese children and adolescents (N = 161) and their parents in Study 2 (N = 159). The counseling implications were discussed. (PsycINFO Database Record (c) 2019 APA, all rights reserved).

Lasing at exciton transition in optically pumped gallium nitride nanopillars.

We report the observation of room temperature lasing action in optically pumped GaN nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth from a GaN substrate. When nanopillars were optically excited, a narrow emission peak emerged from the broad spontaneous emission background. The increasing rate is nine times faster than that of the spontaneous emission background, showing the onset of lasing action. The lasing occurs right at the center of spontaneous emission rather than the often reported redshifted wavelength. A spectroscopic ellipsometry analysis indicates that the gain of lasing action is provided by exciton transition.