In-situ phosphrous doping in ZnTe nanowires with enhanced p-type conductivity.

Single-crystalline undoped and phosphrous-doped (P-doped) p-type ZnTe nanowires (NWs) were synthesized via a simple vapor transport and deposition method. Both undoped and P-doped ZnTe nanowires have zinc blende structure and uniform geometry. X-ray diffraction peaks of the P-doped ZnTe nanowires show an obvious shift toward higher diffraction angle as compared with the undoped ZnTe nanowires. X-ray photoelectron spectroscopy confirms the existence of P-dopant in the ZnTe nanowires. Field-effect transistors based on both undoped and P-doped ZnTe nanowires were fabricated and characterized. Electrical measurements demonstrated that P-doping led to an enhancement in ptype conductivity of ZnTe nanowires. A defect reaction mechanism was proposed to explain the p-type behaviors of both undoped and P-doped ZnTe nanowires.

Single-crystalline ZnTe nanowires for application as high-performance green/ultraviolet photodetector.

Single-crystalline ZnTe nanowires were prepared by a simple vapor transport and deposition method. Photodetectors of individual ZnTe nanowires were fabricated to study photoconductivity of the nanowires. It was observed the nanowire photodetectors show the highest visible-light photoconductive gains among all reported photodetectors based on 1D nanostructure semiconductors, including CdS, CdSe, ZnSe, etc. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnTe nanowires are excellent candidates for optoelectronic applications.

High-quality Graphenes via a facile quenching method for field-effect transistors.

Single- and few-layer graphene sheets with sizes up to 0.1 mm were fabricated by simply quenching hot graphite in an ammonium hydrogen carbonate aqueous solution. The identity and thickness of graphene sheets were characterized with transmission electron microscopy, atomic force microscopy, and Raman spectroscopy. In addition to its simplicity and scalability, the present synthesis can produce graphene sheets with excellent qualities in terms of sizes, purity, and crystal quality. The as-produced graphene sheets can be easily transferred to solid substrates for further processing. Field-effect transistors based on individual graphenes were fabricated and shown to have high ambipolar carrier mobilities.

Coaxial nanocables of p-type zinc telluride nanowires sheathed with silicon oxide: synthesis, characterization and properties.

Coaxial nanocables with a single-crystalline zinc telluride (ZnTe) nanowire core and an amorphous silicon oxide (SiO(x)) shell have been synthesized via a simple one-step chemical vapor deposition (CVD) method on gold-decorated silicon substrates. The single-crystal ZnTe nanowire core is in zinc-blende structure along the [111] direction, while the uniform SiO(x) shell fully covers the core with no observable pin-hole or crack. Formation mechanisms of the ZnTe-SiO(x) nanocables are discussed. The ZnTe nanowire core shows p-type electrical properties while the SiO(x) shell acts as an effective insulating layer. The ZnTe-SiO(x) nanocables may have potential applications in nanoscale devices, such as p-type FETs and nanosensors.

Photoconductive properties of selenium nanowire photodetectors.

Selenium nanowires with a diameter of about 70 nm and a growth direction along [001] were fabricated via a facile solution method. Photoconductive properties of Se wires were systematically characterized via photodetectors made of single Se nanowire. The photodetectors exhibited a high light on-off current ratio (Ilight/ Idark) of 450, and a fast light response speed of millisecond rise/fall time with excellent stability and reproducibility. It was also observed that the response time strongly depend on the intensity of the illumination light: the rise time and fall time for a typical photodetector is 0.68/1.85, 0.53/1.70, 0.54/1.65, 0.51/1.59, and 0.49/1.58 ms for light intensity of 0.18, 0.26, 0.43, 0.96, and 1.89 mW/cm2, respectively, and the relationship between the light intensity and the photocurrent can be fitted by using a simple power law. The diameters of the nanowire were found to have a significant influence on the response speed with smaller Se nanowires showing higher response speed. Finally, the mechanisms of photoconduction and factors affecting the performance of the photodetectors were elucidated.

Effect of Ga and Mn doping on structural, electrical transport and magnetic properties of Na(0.75)CoO(2).

The effects of doping with magnetic Mn ions or nonmagnetic Ga ions on the structural, electrical transport and magnetic properties of Na(0.75)CoO(2) have been investigated. It has been found that the lattice parameter c of the samples increases with Ga or Mn ion doping. Ga doping raises the electrical resistivity of Na(0.75)CoO(2), but the metallic conducting behaviour of the compound has not been influenced. In contrast, 5% Mn doping leads to a metal-insulator transition at low temperatures in Na(0.75)Co(1-y)Mn(y)O(2). The susceptibility of the Ga doped sample shows strong magnetic field dependence, while the susceptibility of the Mn doped samples is not very sensitive to the magnetic field. This work implies that magnetic interaction plays an important role in Na(x)CoO(2).

p-Type ZnO nanowire arrays.

Well-aligned ZnO nanowire (NW) arrays with durable and reproducible p-type conductivity were synthesized on alpha-sapphire substrates by using N2O as a dopant source via vapor-liquid-solid growth. The nitrogen-doped ZnO NWs are single-crystalline and grown predominantly along the [110] direction, in contrast to the [001] direction of undoped ZnO NWs. Electrical transport measurements reveal that the nondoped ZnO NWs exhibit n-type conductivity, whereas the nitrogen-doped ZnO NWs show compensated highly resistive n-type and finally p-type conductivity upon increasing N2O ratio in the reaction atmosphere. The electrical properties of p-type ZnO NWs are stable and reproducible with a hole concentration of (1-2) x 10(18) cm(-3) and a field-effect mobility of 10-17 cm2 V(-2) s(-1). Surface adsorptions have a significant effect on the transport properties of NWs. Temperature-dependent PL spectra of N-doped ZnO NWs show acceptor-bound-exciton emission, which corroborates the p-type conductivity. The realization of p-type ZnO NWs with durable and controlled transport properties is important for fabrication of nanoscale electronic and optoelectronic devices.