Tunable Contacts of Bi2 O2 Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection.

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi2 O2 Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre-deposited asymmetric electrodes, the self-powered near-infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight /Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre-depositing the metal electrodes on polyimide and glass, high-performance flexible and omnidirectional self-powered near-infrared photodetectors are achieved successfully. This study opens up new opportunities for low-dimensional semiconductors in next-generation high-performance optoelectronic devices.

New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors.

Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10-1 V, a responsivity of 7.86 × 1012 V W-1, and a detectivity of 5.87 × 1013 Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.

Details of the topological state transition induced by gradually increased disorder in photonic Chern insulators.

Using two well-defined empirical parameters, we numerically investigate the details of the disorder-induced topological state transition (TST) in photonic Chern insulators composed of two-dimensional magnetic photonic crystals (MPCs). The TST undergoes a gradual process, accompanied with some interesting phenomena as the disorder of rod positions in MPCs increases gradually. This kind of TST is determined by the competition among the topologically protected edge state, disorder-induced wave localizations and bulk states in the system. More interestingly, the disorder-induced wave localizations almost have no influence on the one-way propagation of the original photonic topological states (PTSs), and the unidirectional nature of the PTSs at the edge area can survive even when the bulk states arise at stronger disorders. Our results provide detailed demonstrations for the deep understanding of fundamental physics underlying topology and disorder and are also of practical significance in device fabrication with PTSs.