Layer-Polarized Anomalous Hall Effects from Inversion-Symmetric Single-Layer Lattices.

In the field of physics and materials science, the discovery of the layer-polarized anomalous Hall effect (LP-AHE) stands as a crucial development. The current research paradigm is rooted in topological or inversion-asymmetric valleytronic systems, making such a phenomenon rather rare. In this work, a universal design principle for achieving the LP-AHE from inversion-symmetric single-layer lattices is proposed. Through tight-binding model analysis, we demonstrate that by stacking into antiferromagnetic van der Waals bilayer lattices, the coupling physics between PT symmetry and vertical external bias can be realized. This coupling reveals the previously neutralized layer-locked Berry curvature, compelling the carriers to move in a specific direction within a given layer, thereby realizing the LP-AHE. Intriguingly, the chirality of the LP-AHE can be effectively switched by modulating the direction of vertical external bias. First-principles calculations validate this mechanism in bilayer T-FeCl2 and MnPSe3. Our results pave the way for new explorations of the LP-AHE.

Engineering Layertronics in Two-Dimensional Ferromagnetic Multiferroic Lattice.

Layertronics, rooted in the layer Hall effect (LHE), is an emerging fundamental phenomenon in condensed matter physics and spintronics. So far, several theoretical and experimental proposals have been made to realize LHE, but all are based on antiferromagnetic systems. Here, using symmetry and tight-binding model analysis, we propose a general mechanism for engineering layertronics in a two-dimensional ferromagnetic multiferroic lattice. The physics is related to the band geometric properties and multiferroicity, which results in the coupling between Berry curvature and layer degree of freedom, thereby generating the LHE. Using first-principles calculations, we further demonstrate this mechanism in bilayer (BL) TcIrGe2S6. Due to the intrinsic inversion and time-reversal symmetry breakings, BL TcIrGe2S6 exhibits multiferroicity with large Berry curvatures at both the center and corners of the Brillouin zone. These Berry curvatures couple with the layer physics, forming the LHE in BL TcIrGe2S6. Our work opens a new direction for research on layertronics.

Amorphous Vanadium Oxides with Dual ion Storage Mechanism for High-Performance Aqueous Zinc ion Batteries.

Owing to the extremely limited structural deformation caused by the introduction of guest ions that their rigid structure can sustain, crystalline materials typically fail owing to structural collapse when utilized as electrode materials. Amorphous materials, conversely, are more resistant to volume expansion during dynamic ion transport and can introduce a lot of defects as active sites. Here, The amorphous polyaniline-coated/intercalated V2O5·nH2O (PVOH) nanowires are prepared by in situ chemical oxidation combined with self-assembly strategy, which exhibited impressive electrochemical properties because of its short-range ordered crystal structure, oxygen vacancy/defect-rich, improved electronic channels, and ionic channels. Through in situ techniques, the energy storage mechanism of its Zn2+/H+ co-storage is investigated and elucidated. Additionally, this work provides new insights and perspectives for the investigation and application of amorphous cathodes for aqueous zinc ion batteries.

Broadband nonlinear optical response and sub-picosecond carrier dynamics in graphene-SnSe2 van der Waals heterostructures.

The van der Waals (vdWs) heterostructures, with vertical layer stacking structure of various two-dimensional (2D) materials, maintain the reliable photonic characteristics while compensating the shortcomings of the participating individual components. In this work, we combine the less-studied multilayer tin selenide (SnSe2) thin film with one of the traditional 2D materials, graphene, to fabricate the graphene-based vdWs optical switching element (Gr-SnSe2) with superior broadband nonlinear optical response. The transient absorption spectroscopy (TAS) measurement results verify that graphene acts as the recombination channel for the photogenerated carrier in the Gr-SnSe2 sample, and the fast recovery time can be reduced to hundreds of femtoseconds which is beneficial for the optical modulation process. The optical switching properties are characterized by the I-scan measurements, exhibiting a saturable energy intensity of 2.82 mJ·cm-2 (0.425 µJ·cm-2) and a modulation depth of 15.6% (22.5%) at the wavelength of 1030 nm (1980nm). Through integrating Gr-SnSe2 with a cladding waveguide, high-performance picosecond Q-switched operation in the near-infrared (NIR) and mid-infrared (MIR) spectral regions are both achieved. This work experimentally demonstrates the great potential of graphene-based vdWs heterostructures for applications in broadband ultrafast photonics.

Magnetic skyrmions and their manipulations in a 2D multiferroic CuCrP2Te6 monolayer.

Magnetic skyrmions and their effective manipulations are promising for the design of next-generation information storage and processing devices, due to their topologically protected chiral spin textures and low energy cost. They, therefore, have attracted significant interest from the communities of condensed matter physics and materials science. Herein, based on density functional theory (DFT) calculations and micromagnetic simulations, we report the spontaneous 2 nm-diameter magnetic skyrmions in the monolayer CuCrP2Te6 originating from the synergistic effect of broken inversion symmetry and strong Dzyaloshinskii-Moriya interactions (DMIs). The creation and annihilation of magnetic skyrmions can be achieved via the ferroelectric to anti-ferroelectric (FE-to-AFE) transition, due to the variation of the magnetic parameter D2/|KJ|. Moreover, we also found that the DMIs and Heisenberg isotropic exchange can be manipulated by bi-axial strain, to effectively enhance skyrmion stability. Our findings provide feasible approaches to manipulate the skyrmions, which can be used for the design of next-generation information storage devices.

Multiple Topological Magnetism in van der Waals Heterostructure of MnTe2/ZrS2.

Topological magnetism in low-dimensional systems is of fundamental and practical importance in condensed-matter physics and material science. Here, using first-principles and Monte Carlo simulations, we present that multiple topological magnetism (i.e., skyrmion and bimeron) can survive in van der Waals heterostructure MnTe2/ZrS2. Arising from interlayer coupling, MnTe2/ZrS2 can harbor a large Dzyaloshinskii-Moriya interaction. This, combined with exchange interaction, yields an intriguing skyrmion phase under a tiny magnetic field of 75 mT. Meanwhile, upon harnessing a small electric field, magnetic bimeron can be observed in MnTe2/ZrS2, suggesting the existence of multiple topological magnetism. Through interlayer sliding, both topological magnetisms can be switched on-off. In addition, the impacts of d∥ and Keff on these spin textures are revealed, and a dimensionless parameter κ is utilized to describe their joint effect. These explored phenomena and insights not only are useful for fundamental research in topological magnetism but also enable novel applications in nanodevices.

Layer Hall Effect in Multiferroic Two-Dimensional Materials.

The layer Hall effect (LHE) is of fundamental and practical importance in condensed-matter physics and material science; however, it was rarely observed and usually based on the paradigms of persistent electric field and sliding ferroelectricity. Here, a new mechanism of LHE is proposed by coupling layer physics with multiferroics using symmetry analysis and a low-energy k·p model. Due to time-reversal symmetry breaking and valley physics, the Bloch electrons on one valley will be subject to a large Berry curvature. This combined with inversion symmetry breaking gives rise to layer-polarized Berry curvature and can force the electrons to deflect in one direction of a given layer, thereby generating the LHE. We demonstrate that the resulting LHE is ferroelectrically controllable and reversible. Using first-principles calculations, this mechanism and predicted phenomena are verified in the multiferroic material of bilayer Co2CF2. Our finding opens a new direction for LHE and 2D materials research.

Controllable Electrocatalytic to Photocatalytic Conversion in Ferroelectric Heterostructures.

Photocatalytic and electrocatalytic reactions to produce value-added chemicals offer promising solutions for addressing the energy crisis and environmental pollution. Photocatalysis is driven by light excitation and charge separation and relies on semiconducting catalysts, while electrocatalysis is driven by external electric current and is mostly based on metallic catalysts with high electrical conductivity. Due to the distinct reaction mechanism, the conversion between the two catalytic types has remained largely unexplored. Herein, by means of density functional theory (DFT) simulations, we demonstrated that the ferroelectric heterostructures Mo-BN@In2Se3 and WSe2@In2Se3 can exhibit semiconducting or metallic features depending on the polarization direction as a result of the built-in field and electron transfer. Using the nitrogen reduction reaction (NRR) and hydrogen evolution reaction (HER) as examples, the metallic heterostructures act as excellent electrocatalysts for these reactions, while the semiconducting heterostructures serve as the corresponding photocatalysts with improved optical absorption, enhanced charge separation, and low Gibbs free energy change. The findings not only bridge physical phenomena of the electronic phase transition with chemical reactions but also offer a new and feasible approach to significantly improve the catalytic efficiency.

Red-Light-Responsive Polypeptoid Nanoassemblies Containing a Ruthenium(II) Polypyridyl Complex with Synergistically Enhanced Drug Release and ROS Generation for Anticancer Phototherapy.

Polymer micelles/vesicles made of a red-light-responsive Ru(II)-containing block copolymer (PolyRu) are elaborated as a model system for anticancer phototherapy. PolyRu is composed of PEG and a hydrophobic polypeptoid bearing thioether side chains, 40% of which are coordinated with [Ru(2,2':6',2″-terpyridine)(2,2'-biquinoline)](PF6)2 via the Ru-S bond, resulting in a 67 wt % Ru complex loading capacity. Red-light illumination induces the photocleavage of the Ru-S bond and produces [Ru(2,2':6',2″-terpyridine)(2,2'-biquinoline)(H2O)](PF6)2. Meanwhile, ROS are generated under the photosensitization of the Ru complex and oxidize hydrophobic thioether to hydrophilic sulfoxide, causing the disruption of micelles/vesicles. During the disruption, ROS generation and Ru complex release are synergistically enhanced. PolyRu micelles/vesicles are taken up by cancer cells while they exhibit very low cytotoxicity in the dark. In contrast, they show much higher cytotoxicity under red-light irradiation. PolyRu micelles/vesicles are promising nanoassembly prototypes that protect metallodrugs in the dark but exhibit light-activated anticancer effects with spatiotemporal control for photoactivated chemotherapy and photodynamic therapy.

Spontaneous Magnetic Skyrmions in Single-Layer CrInX3 (X = Te, Se).

The realization of magnetic skyrmions in nanostructures holds great promise for both fundamental research and device applications. Despite recent progress, intrinsic magnetic skyrmions in two-dimensional lattice are still rarely explored. Here, using first-principles calculations and Monte Carlo simulations, we report the identification of spontaneous magnetic skyrmions in single-layer CrInX3 (X = Te, Se). Because of the joint effect of broken inversion symmetry and strong spin-orbit coupling, inherent large Dzyaloshinskii-Moriya interaction occurs in both systems, endowing the intriguing Néel-type skyrmions. By further imposing moderate magnetic field, the skyrmion phase can be obtained and is stable within a wide temperature range. Particularly for single-layer CrInTe3, the size of skyrmions is sub-10 nm and the skyrmion phase can be maintained at an elevated temperature of ∼180 K. In addition, the phase diagrams of their topological spin textures under the variation of magnetic parameters of D, J, and K are mapped out.

Defect-engineered three-dimensional vanadium diselenide microflowers/nanosheets on carbon cloth by chemical vapor deposition for high-performance hydrogen evolution reaction.

In the past decades, defect engineering has become an effective strategy to significantly improve the hydrogen evolution reaction (HER) efficiency of electrocatalysts. In this work, a facile chemical vapor deposition (CVD) method is firstly adopted to demonstrate defect engineering in high-efficiency HER electrocatalysts of vanadium diselenide nanostructures. For practical applications, the conductive substrate of carbon cloth (CC) is selected as the growth substrate. By using a four-time CVD method, uniform three-dimensional microflowers with defect-rich small nanosheets on the surface are prepared directly on the CC substrate, displaying a stable HER performance with a low Tafel slope value of 125 mV dec-1and low overpotential voltage of 295 mV at a current density of 10 mA cm-2in alkaline electrolyte. Based on the results of x-ray photoelectron spectra and density functional theory calculations, the impressive HER performance originates from the Se vacancy-related active sites of small nanosheets, while the microflower/nanosheet homoepitaxy structure facilitates the carrier flow between the active sites and conductive substrate. All the results present a new route to achieve defect engineering using the facile CVD technique, and pave a novel way to prepare high-activity layered electrocatalysts directly on a conductive substrate.

The optical properties and carrier mobility of MH3 (M = Co, Rh and Ir) monolayers.

A new series of two-dimensional transition metal hydrides MH3 (M = Co, Rh, Ir) are investigated using first principles calculations. Their electronic structures, phonon dispersion, optical absorptions, and carrier mobilities are obtained and discussed. Our results on the basis of the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional reveal that CoH3, RhH3 and IrH3 are indirect semiconductors with band gaps of 2.54 eV, 1.80 eV and 1.82 eV, respectively. Moreover, MH3 monolayers show strong optical absorption in the visible and near-ultraviolet light regions. Under tensile strain, the band gaps decrease and the optical absorption is enhanced in the visible region. The obtained carrier mobilities are found to be anisotropic along the armchair and zigzag directions. The holes along the armchair are more easily transferred with high mobility. The strong optical absorption intensity and the relatively high carrier mobilities make MH3 monolayers (especially RhH3 and IrH3) potential candidates for applications in photovoltaics.

Tl2O/WTe2 van der Waals heterostructure with tunable multiple band alignments.

Two-dimensional van der Waals heterostructures (vdWHs) with tunable band alignment can be very useful for developing minimized multifunctional and controllable devices, but so far they are scarcely reported. Here, using first-principles calculations, we systematically investigate the electronic properties of Tl2O/WTe2 vdWH. Our results indicate that it is a direct bandgap semiconductor harboring a straddling type-I band alignment, with the conduction band minimum (CBM) and valence band maximum (VBM) both from two-dimensional WTe2. Interestingly, upon introducing feasible external strain or electric field, its band alignment can be easily transformed into staggered type-II, with CBM and VBM separated in different layers, achieving the long-sought tunable multiple band alignments. Along with this, the intriguing direct-to-indirect bandgap transition is also achieved in Tl2O/WTe2 vdWH. Our work thus provides a promising candidate in the field of two-dimensional multifunctional and controllable electronics.

Single-Layer Ag2S: A Two-Dimensional Bidirectional Auxetic Semiconductor.

Two-dimensional auxetic materials have attracted considerable attention due to their potential applications in medicine, tougher composites, defense, and so on. However, they are scare especially at low dimension, as auxetic materials are mainly realized in engineered materials and structures. Here, using first-principles calculations, we identify a compelling two-dimensional auxetic material, single-layer Ag2S, which possesses large negative Poisson's ratios in both in-plane and out-of-plane directions, but anisotropic ultralow Young's modulus. Such a coexistence of simultaneous negative Poisson's ratios in two directions is extremely rare, which is mainly originated from its particular zigzag-shaped buckling structure. In addition, contrary to the previously known metal-shrouded single-layer M2X (M = metal, X = nonmetal), single-layer Ag2S is the first nonmetal-shrouded M2X. Electronic calculations show that it is an indirect-gap semiconductor with gap value of 2.83 eV, and it can be turned to be direct with strain. These intriguing properties make single-layer Ag2S a promising auxetic material in electronics and mechanics.

Ultrahigh Hole Mobility of Sn-Catalyzed GaSb Nanowires for High Speed Infrared Photodetectors.

Owing to the relatively low hole mobility, the development of GaSb nanowire (NW) electronic and photoelectronic devices has stagnated in the past decade. During a typical catalyst-assisted chemical vapor deposition (CVD) process, the adopted metallic catalyst can be incorporated into the NW body to act as a slight dopant, thus regulating the electrical properties of the NW. In this work, we demonstrate the use of Sn as a catalyst and dopant for GaSb NWs in the surfactant-assisted CVD growth process. The Sn-catalyzed zinc-blende GaSb NWs are thin, long, and straight with good crystallinity, resulting in a record peak hole mobility of 1028 cm2 V-1 s-1. This high mobility is attributed to the slight doping of Sn atoms from the catalyst tip into the NW body, which is verified by the red-shifted photoluminescence peak of Sn-catalyzed GaSb NWs (0.69 eV) compared with that of Au-catalyzed NWs (0.74 eV). Furthermore, the parallel array NWs also show a high peak hole mobility of 170 cm2 V-1 s-1, a high responsivity of 61 A W-1, and fast rise and decay times of 195.1 and 380.4 µs, respectively, under the illumination of 1550 nm infrared light. All of the results demonstrate that the as-prepared Sn-catalyzed GaSb NWs are promising for application in next-generation electronics and optoelectronics.

Prediction of two-dimensional PC6 as a promising anode material for potassium-ion batteries.

Due to the intrinsic safety and high abundance of potassium, the development of potassium-ion batteries has generated a surge of interest. Currently, the key challenge in this field is the lack of suitable anode materials. Here, based on first-principles calculations, we report the identification of a promising candidate in the PC6 monolayer. The PC6 monolayer is a semiconductor, but with a rather small band gap, and becomes metallic upon adsorbing K atoms, suggesting its good electrical conductivity during the battery cycle. It exhibits a high storage capacity of 781 mA h g-1, superior to those of many other reported anode materials for potassium-ion batteries. Meanwhile, it shows a low diffusion energy barrier and open circuit voltage. Moreover, the PC6 monolayer has a relatively small Young's modulus, showing potential for application in flexible batteries. These appealing properties render the PC6 monolayer an excellent anode candidate for potassium-ion batteries.

Two-dimensional ferroelastic semiconductors in single-layer indium oxygen halide InOY (Y = Cl/Br).

Two-dimensional ferroelastic materials have triggered tremendous interest for applications in nonvolatile memory devices. Here using first-principles calculations, we identify a novel class of two-dimensional ferroelastic materials, single-layer InOY (Y = Cl/Br). The ferroelasticity in single-layer InOY shows a moderate switching barrier and high reversible strain, which are promising for practical applications in nonvolatile memory. Meanwhile, single-layer InOY is a semiconductor with an indirect band gap. The unique combination of being a semiconductor with ferroelastic behaviors would be beneficial for the integration of functional nonvolatile memories into nanocircuits. Moreover, both systems can readily be exfoliated from their layered bulks due to the weak interlayer interactions. These intriguing behaviors suggest the high potential of single-layer InOY for practical memory device applications.

Ideal inert substrates for planar antimonene: h-BN and hydrogenated SiC(0001).

Planar antimonene, as one of the most promising two-dimensional materials, was recently obtained on a Ag(111) substrate [Y. Shao, Z. L. Liu, et al., Nano Lett., 2018, 18, 2133]. However, its particular electronic properties are severely degraded due to the substrate, making its further study and practical applications challenging. Here, using first-principles calculations, we propose that h-BN and hydrogenated SiC(0001) are extraordinary substrates of planar antimonene. Their interactions with planar antimonene exhibit low binding energies and large interlayer distances, and are typical van der Waals interactions. Most importantly, the bands of planar antimonene near the Fermi level are perfectly preserved, with the bands of h-BN and hydrogenated SiC(0001) lying away from the Fermi level. Moreover, such features are inert to the stacking patterns for both systems, making them suitable for practical applications. Our results will greatly broaden the scientific and technological impact of planar antimonene.

Two dimensional boron nanosheets: synthesis, properties and applications.

Two dimensional boron nanosheets have been proposed theoretically for a decade, but were not experimentally synthesized until very recently. Research into their fundamental properties and device applications has since seen exponential growth. In this perspective, we review recent research progress related to 2D boron sheets, touching upon the topics of fabrication, properties, and applications, as well as discussing challenges and future research directions. We highlight the intrinsic electronic and mechanical properties of boron sheets, resulting from their diverse structures. Their facile fabrication and novel properties have inspired the design and demonstration of new nanodevices; however, further progress relies on resolving technical obstructions, like non-scalable fabrication techniques. We also briefly describe some feasible schemes that can address the associated challenges. It is expected that this fascinating material will offer tremendous opportunities for research and development in the foreseeable future.

Tl2S: a metal-shrouded two-dimensional semiconductor.

Recently, the family of metal-shrouded two-dimensional (2D) crystals has expanded rapidly, although most of these crystals are metallic. Using first-principles, we identify a semiconducting 2D metal-shrouded crystal, namely the Tl2S monolayer, which is found to be thermally and dynamically stable, and should be readily exfoliated experimentally. Most importantly, Tl2S monolayers exhibit compelling electronic and photovoltaic properties, i.e., modulable bandgaps of 1.89-2.31 eV, strong light absorption and ideal photo-electricity transduction properties. Additionally, the unique metal-shrouded structure, that has rarely been found in other 2D semiconductors, endows monolayer Tl2S with the potential to form excellent contacts with electrode materials in device applications. An intriguing large conduction band spin-valley coupling is also obtained in 2H-Tl2S due to the strong spin-orbit coupling and breaking of inversion symmetry. These exotic properties render Tl2S an excellent candidate for a wide range of applications in electronic and photovoltaic devices.